CH402425A - Procédé de cristallisation d'une matière semi-conductrice - Google Patents

Procédé de cristallisation d'une matière semi-conductrice

Info

Publication number
CH402425A
CH402425A CH6104158A CH6104158A CH402425A CH 402425 A CH402425 A CH 402425A CH 6104158 A CH6104158 A CH 6104158A CH 6104158 A CH6104158 A CH 6104158A CH 402425 A CH402425 A CH 402425A
Authority
CH
Switzerland
Prior art keywords
crystallization
semiconductor material
semiconductor
Prior art date
Application number
CH6104158A
Other languages
English (en)
Inventor
Sanford Indig George
Gardner Pfann William
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH402425A publication Critical patent/CH402425A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH6104158A 1957-06-25 1958-06-25 Procédé de cristallisation d'une matière semi-conductrice CH402425A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US667956A US2861905A (en) 1957-06-25 1957-06-25 Process for controlling excess carrier concentration in a semiconductor

Publications (1)

Publication Number Publication Date
CH402425A true CH402425A (fr) 1965-11-15

Family

ID=24680369

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6104158A CH402425A (fr) 1957-06-25 1958-06-25 Procédé de cristallisation d'une matière semi-conductrice

Country Status (7)

Country Link
US (1) US2861905A (fr)
BE (1) BE567569A (fr)
CH (1) CH402425A (fr)
DE (1) DE1215658B (fr)
FR (1) FR1208294A (fr)
GB (1) GB871839A (fr)
NL (2) NL229017A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
NL247854A (fr) * 1960-01-28
US3248677A (en) * 1961-10-27 1966-04-26 Ibm Temperature compensated semiconductor resistor
NL292671A (fr) * 1962-05-14
DE3049376A1 (de) 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
CN106222742B (zh) * 2016-09-12 2019-01-29 江西赛维Ldk太阳能高科技有限公司 一种晶体硅及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE528916A (fr) * 1953-05-18

Also Published As

Publication number Publication date
GB871839A (en) 1961-07-05
DE1215658B (de) 1966-05-05
NL112556C (fr) 1900-01-01
US2861905A (en) 1958-11-25
FR1208294A (fr) 1960-02-23
BE567569A (fr) 1900-01-01
NL229017A (fr) 1900-01-01

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