CH377004A - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
CH377004A
CH377004A CH113162A CH113162A CH377004A CH 377004 A CH377004 A CH 377004A CH 113162 A CH113162 A CH 113162A CH 113162 A CH113162 A CH 113162A CH 377004 A CH377004 A CH 377004A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH113162A
Other languages
English (en)
Inventor
Emeis Reimer Dr Dipl-Phys
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH377004A publication Critical patent/CH377004A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
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    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
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    • H01L2924/01Chemical elements
    • H01L2924/01018Argon [Ar]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
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    • H01L2924/01025Manganese [Mn]
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    • H01L2924/01027Cobalt [Co]
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    • H01L2924/01029Copper [Cu]
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    • H01L2924/01032Germanium [Ge]
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    • H01L2924/01033Arsenic [As]
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    • H01L2924/01042Molybdenum [Mo]
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    • H01L2924/01047Silver [Ag]
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    • H01L2924/01051Antimony [Sb]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01073Tantalum [Ta]
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    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
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    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
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    • H01L2924/01079Gold [Au]
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    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
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    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
CH113162A 1961-03-28 1962-01-30 Halbleiteranordnung CH377004A (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DES0073181 1961-03-28
DES0074486 1961-06-24
DES74696A DE1279198B (de) 1961-03-28 1961-07-07 Halbleiteranordnung

Publications (1)

Publication Number Publication Date
CH377004A true CH377004A (de) 1964-04-30

Family

ID=27212716

Family Applications (1)

Application Number Title Priority Date Filing Date
CH113162A CH377004A (de) 1961-03-28 1962-01-30 Halbleiteranordnung

Country Status (6)

Country Link
US (1) US3280383A (de)
BE (1) BE614767A (de)
CH (1) CH377004A (de)
DE (3) DE1439084A1 (de)
GB (1) GB979465A (de)
NL (1) NL275010A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL135880C (de) * 1961-07-12 1900-01-01
US3378735A (en) * 1963-06-12 1968-04-16 Siemens Ag Semiconductor device housing with spring contact means and improved thermal characteristics
US3396316A (en) * 1966-02-15 1968-08-06 Int Rectifier Corp Compression bonded semiconductor device with hermetically sealed subassembly
JPS529117B1 (de) * 1970-01-26 1977-03-14
US3651383A (en) * 1970-02-05 1972-03-21 Gen Electric Unitary high power semiconductor subassembly suitable for mounting on a separable heat sink
US4686499A (en) * 1984-09-28 1987-08-11 Cincinnati Microwave, Inc. Police radar warning receiver with cantilevered PC board structure
EP0638928B1 (de) * 1993-08-09 1998-10-14 Siemens Aktiengesellschaft Leistungs-Halbleiterbauelement mit Druckkontakt
EP1389802A1 (de) * 2002-08-16 2004-02-18 ABB Schweiz AG Schutzschicht für Leistungshalbleitermodul-Kontaktplättchen

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2826725A (en) * 1953-11-10 1958-03-11 Sarkes Tarzian P-n junction rectifier
NL204333A (de) * 1954-01-14 1900-01-01
NL110715C (de) * 1954-12-16 1900-01-01
US2863105A (en) * 1955-11-10 1958-12-02 Hoffman Electronics Corp Rectifying device
NL101591C (de) * 1956-03-22
US2941149A (en) * 1956-08-20 1960-06-14 Electronic Specialty Co Electrical instrument protectors
US3051878A (en) * 1957-05-02 1962-08-28 Sarkes Tarzian Semiconductor devices and method of manufacturing them
US2838722A (en) * 1957-06-04 1958-06-10 Ballou & Co B A Semiconductor device
US2972096A (en) * 1957-11-26 1961-02-14 Smith Corp A O Protection of a temperature sensitive device
US2957112A (en) * 1957-12-09 1960-10-18 Westinghouse Electric Corp Treatment of tantalum semiconductor electrodes
US2896136A (en) * 1958-04-23 1959-07-21 Philco Corp Semiconductor units
NL249694A (de) * 1959-12-30

Also Published As

Publication number Publication date
DE1439084A1 (de) 1969-10-16
BE614767A (fr) 1962-09-02
US3280383A (en) 1966-10-18
DE1279198B (de) 1968-10-03
NL275010A (de) 1900-01-01
DE1248811B (de)
GB979465A (en) 1965-01-06

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