CH361059A - Transistor et procédé de fabrication de celui-ci - Google Patents
Transistor et procédé de fabrication de celui-ciInfo
- Publication number
- CH361059A CH361059A CH361059DA CH361059A CH 361059 A CH361059 A CH 361059A CH 361059D A CH361059D A CH 361059DA CH 361059 A CH361059 A CH 361059A
- Authority
- CH
- Switzerland
- Prior art keywords
- transistor
- manufacturing
- same
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US758422A US3118094A (en) | 1958-09-02 | 1958-09-02 | Diffused junction transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
CH361059A true CH361059A (fr) | 1962-03-31 |
Family
ID=25051690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH361059D CH361059A (fr) | 1958-09-02 | 1959-08-28 | Transistor et procédé de fabrication de celui-ci |
Country Status (6)
Country | Link |
---|---|
US (1) | US3118094A (fr) |
CH (1) | CH361059A (fr) |
DE (1) | DE1182354B (fr) |
FR (1) | FR1246238A (fr) |
GB (1) | GB883700A (fr) |
NL (2) | NL242895A (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL290202A (fr) * | 1962-03-15 | |||
US3254279A (en) * | 1963-04-17 | 1966-05-31 | Cohn James | Composite alloy electric contact element |
US3235937A (en) * | 1963-05-10 | 1966-02-22 | Gen Electric | Low cost transistor |
US3326730A (en) * | 1965-04-13 | 1967-06-20 | Ibm | Preparing group ii-vi compound semiconductor devices |
DE1230919B (de) * | 1965-07-17 | 1966-12-22 | Telefunken Patent | Verfahren zur sperrschichtfreien Kontaktierung von p-leitenden Zonen eines Halbleiterkoerpers mit einem Gold-Gallium-Lot |
US3473980A (en) * | 1966-10-11 | 1969-10-21 | Bell Telephone Labor Inc | Significant impurity sources for solid state diffusion |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT181629B (de) * | 1950-09-14 | 1955-04-12 | Western Electric Co | Einrichtung zur Signalumsetzung mit einem Körper aus halbleitendem Material und Verfahren zur Herstellung derselben |
US2740076A (en) * | 1951-03-02 | 1956-03-27 | Int Standard Electric Corp | Crystal triodes |
NL175652B (nl) * | 1952-02-07 | Krings Josef | Glijschoen voor een spaninrichting van een greppelbouwinrichting. | |
US2765245A (en) * | 1952-08-22 | 1956-10-02 | Gen Electric | Method of making p-n junction semiconductor units |
US2793332A (en) * | 1953-04-14 | 1957-05-21 | Sylvania Electric Prod | Semiconductor rectifying connections and methods |
US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
US2795744A (en) * | 1953-06-12 | 1957-06-11 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
US2833969A (en) * | 1953-12-01 | 1958-05-06 | Rca Corp | Semi-conductor devices and methods of making same |
NL98710C (fr) * | 1954-02-27 | |||
US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
BE537841A (fr) * | 1954-05-03 | 1900-01-01 | ||
US2736847A (en) * | 1954-05-10 | 1956-02-28 | Hughes Aircraft Co | Fused-junction silicon diodes |
US2936256A (en) * | 1954-06-01 | 1960-05-10 | Gen Electric | Semiconductor devices |
US2889499A (en) * | 1954-09-27 | 1959-06-02 | Ibm | Bistable semiconductor device |
BE541575A (fr) * | 1954-09-27 | |||
BE544843A (fr) * | 1955-02-25 | |||
BE547274A (fr) * | 1955-06-20 | |||
GB807995A (en) * | 1955-09-02 | 1959-01-28 | Gen Electric Co Ltd | Improvements in or relating to the production of semiconductor bodies |
US2856320A (en) * | 1955-09-08 | 1958-10-14 | Ibm | Method of making transistor with welded collector |
US2916408A (en) * | 1956-03-29 | 1959-12-08 | Raytheon Co | Fabrication of junction transistors |
US2805370A (en) * | 1956-04-26 | 1957-09-03 | Bell Telephone Labor Inc | Alloyed connections to semiconductors |
US2934588A (en) * | 1958-05-08 | 1960-04-26 | Bell Telephone Labor Inc | Semiconductor housing structure |
-
0
- NL NL121500D patent/NL121500C/xx active
- NL NL242895D patent/NL242895A/xx unknown
-
1958
- 1958-09-02 US US758422A patent/US3118094A/en not_active Expired - Lifetime
-
1959
- 1959-08-20 DE DET17098A patent/DE1182354B/de active Pending
- 1959-08-25 GB GB29050/59A patent/GB883700A/en not_active Expired
- 1959-08-28 CH CH361059D patent/CH361059A/fr unknown
- 1959-09-01 FR FR804022A patent/FR1246238A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1246238A (fr) | 1960-11-18 |
NL121500C (fr) | |
NL242895A (fr) | |
GB883700A (en) | 1961-12-06 |
US3118094A (en) | 1964-01-14 |
DE1182354B (de) | 1964-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1233313A (fr) | Semi-conducteurs n et leur procédé de fabrication | |
CH377003A (fr) | Transistor et procédé de fabrication dudit transistor | |
FR1229415A (fr) | Circuits supraconducteurs et procédés de fabrication de ces derniers | |
FR1180762A (fr) | Transistor à diffusion et son procédé de fabrication | |
CH361059A (fr) | Transistor et procédé de fabrication de celui-ci | |
FR1230318A (fr) | Cigare et procédé de fabrication | |
FR1231393A (fr) | Accouplement de transmission élastique et procédé de fabrication de celui-ci | |
FR1235720A (fr) | Dispositif semi-conducteur et procédé de fabrication de celui-ci | |
FR1235756A (fr) | Eléments thermoélectriques et leur procédé de fabrication | |
CH345080A (fr) | Dispositif semi-conducteur et procédé de fabrication de celui-ci | |
FR1232116A (fr) | Soupape et son procédé de fabrication | |
FR1238051A (fr) | Composition organo-silicique et son procédé de fabrication | |
FR1203905A (fr) | Accouplement perfectionné et son procédé de fabrication | |
FR1205168A (fr) | Transistors de puissance et procédé de fabrication | |
FR1261877A (fr) | Composition de protéines et procédé de fabrication | |
FR1206380A (fr) | Procédé de fabrication de panneaux et panneaux ainsi fabriqués | |
FR1326318A (fr) | Procédé de fabrication de 1-déshydro-6-fluoro-9alpha-halo-21-désoxyhydrocortisone et désoxycortisone | |
FR1314392A (fr) | Photo-réserves et procédé de fabrication des photo-réserves | |
BE580412A (fr) | Transistor à diffusion et son procédé de fabrication | |
FR1199136A (fr) | Menuiseries extérieures et procédé de fabrication | |
FR1290268A (fr) | Procédé de fabrication de toluylènediamines 2-4 et 2-6 | |
FR1326316A (fr) | Procédé de fabrication de 1-déshydro-6,21-difluoro-9alpha-halo-21-désoxyhydrocortisone et de 1-déshydro-6,21-difluoro-9alpha-halo-21-désoxycortisone | |
FR1194610A (fr) | 1-n-butylboracyclohexane et son procédé de fabrication | |
FR1235276A (fr) | Potentiomètre et procédé de fabrication | |
FR1205298A (fr) | Joint et son procédé de fabrication |