CH318659A - Modulatorschaltung mit einem Transistor - Google Patents

Modulatorschaltung mit einem Transistor

Info

Publication number
CH318659A
CH318659A CH318659DA CH318659A CH 318659 A CH318659 A CH 318659A CH 318659D A CH318659D A CH 318659DA CH 318659 A CH318659 A CH 318659A
Authority
CH
Switzerland
Prior art keywords
transistor
modulator circuit
modulator
circuit
Prior art date
Application number
Other languages
English (en)
Inventor
Cluwen Johannes Meyer
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH318659A publication Critical patent/CH318659A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D3/00—Demodulation of angle-, frequency- or phase- modulated oscillations
    • H03D3/02—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
    • H03D3/06—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators
    • H03D3/14—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by combining signals additively or in product demodulators by means of semiconductor devices having more than two electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C1/00—Amplitude modulation
    • H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Amplifiers (AREA)
  • Amplitude Modulation (AREA)
  • Networks Using Active Elements (AREA)
CH318659D 1952-12-01 1953-11-30 Modulatorschaltung mit einem Transistor CH318659A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL318659X 1952-12-01

Publications (1)

Publication Number Publication Date
CH318659A true CH318659A (de) 1957-01-15

Family

ID=19783901

Family Applications (1)

Application Number Title Priority Date Filing Date
CH318659D CH318659A (de) 1952-12-01 1953-11-30 Modulatorschaltung mit einem Transistor

Country Status (7)

Country Link
US (1) US2870413A (de)
BE (1) BE524722A (de)
CH (1) CH318659A (de)
DE (1) DE924328C (de)
FR (1) FR1095001A (de)
GB (2) GB785537A (de)
NL (2) NL174268B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL106705C (de) * 1957-05-07
US3079562A (en) * 1958-01-23 1963-02-26 Collins Radio Co Temperature-stabilized and distortionless semiconductor detector
NL126564C (de) * 1958-12-02 1900-01-01
US2994830A (en) * 1959-04-13 1961-08-01 Texas Instruments Inc Tetrode transistor fm detector
NL260007A (de) * 1960-01-14
DE1196794C2 (de) * 1960-03-26 1966-04-07 Telefunken Patent Halbleiterbauelement mit einem scheiben-foermigen Halbleiterkoerper, insbesondere Transistor, und Verfahren zum Herstellen
DE1207509B (de) * 1962-05-02 1965-12-23 Siemens Ag Gesteuertes Halbleiterstromtor mit mehreren Zonen
US3315096A (en) * 1963-02-22 1967-04-18 Rca Corp Electrical circuit including an insulated-gate field effect transistor having an epitaxial layer of relatively lightly doped semiconductor material on a base layer of more highly doped semiconductor material for improved operation at ultra-high frequencies

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2462849A (en) * 1945-08-04 1949-03-01 Standard Telephones Cables Ltd Push-pull system
NL75792C (de) * 1948-05-19
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
US2657360A (en) * 1952-08-15 1953-10-27 Bell Telephone Labor Inc Four-electrode transistor modulator

Also Published As

Publication number Publication date
BE524722A (de)
GB785538A (en) 1957-10-30
US2870413A (en) 1959-01-20
GB785537A (en) 1957-10-30
DE924328C (de) 1955-02-28
NL91993C (de)
NL174268B (nl)
FR1095001A (fr) 1955-05-26

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