CH248334A - Elektrisches Organ mit einer Selenschicht und Verfahren zur Herstellung desselben. - Google Patents

Elektrisches Organ mit einer Selenschicht und Verfahren zur Herstellung desselben.

Info

Publication number
CH248334A
CH248334A CH248334DA CH248334A CH 248334 A CH248334 A CH 248334A CH 248334D A CH248334D A CH 248334DA CH 248334 A CH248334 A CH 248334A
Authority
CH
Switzerland
Prior art keywords
manufacturing
same
selenium layer
electrical organ
organ
Prior art date
Application number
Other languages
English (en)
Inventor
Company Westingh Manufacturing
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH248334A publication Critical patent/CH248334A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Thermistors And Varistors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
CH248334D 1943-12-15 1945-10-11 Elektrisches Organ mit einer Selenschicht und Verfahren zur Herstellung desselben. CH248334A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US514371A US2488369A (en) 1943-12-15 1943-12-15 Selenium rectifier

Publications (1)

Publication Number Publication Date
CH248334A true CH248334A (de) 1947-04-30

Family

ID=24046859

Family Applications (1)

Application Number Title Priority Date Filing Date
CH248334D CH248334A (de) 1943-12-15 1945-10-11 Elektrisches Organ mit einer Selenschicht und Verfahren zur Herstellung desselben.

Country Status (6)

Country Link
US (1) US2488369A (de)
CH (1) CH248334A (de)
DE (1) DE884847C (de)
FR (1) FR988428A (de)
GB (1) GB596585A (de)
NL (1) NL70500C (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968580C (de) * 1948-10-02 1958-03-06 Standard Elektrik Ag Verfahren zur Herstellung von Trockengleichrichtern
DE973817C (de) * 1951-03-05 1960-06-15 Licentia Gmbh Verfahren zur Herstellung eines Trockengleichrichters

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2901348A (en) * 1953-03-17 1959-08-25 Haloid Xerox Inc Radiation sensitive photoconductive member
US2853663A (en) * 1954-07-08 1958-09-23 Vickers Inc Power transmission
NL204284A (de) * 1955-02-15
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
US2886434A (en) * 1955-06-06 1959-05-12 Horizons Inc Protected photoconductive element and method of making same
DE1034290B (de) * 1956-02-07 1958-07-17 Zeiss Jena Veb Carl Verfahren zur Erhoehung der Empfindlichkeit, insbesondere der Ultrarot-Empfindlichkeit, von fuer den Ultrarot-Bereich sensibilisierten Selen-Sperrschichtzellen
DE1090768B (de) * 1957-05-11 1960-10-13 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern
US3023121A (en) * 1959-08-13 1962-02-27 Robert L Dyar Method of constructing abrasive coated cylinders

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB439774A (en) * 1934-03-21 1935-12-13 British Thomson Houston Co Ltd Improvements relating to photo-electric cells and methods of manufacturing the same
US2121603A (en) * 1936-05-30 1938-06-21 Westinghouse Electric & Mfg Co Method of producing selenium rectifiers
DE916085C (de) * 1937-11-01 1954-08-02 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
US2221596A (en) * 1938-01-22 1940-11-12 Fides Gmbh Method of manufacturing dry rectifiers
US2193610A (en) * 1938-02-17 1940-03-12 Westinghouse Electric & Mfg Co Selenium contact electrode
FR851651A (fr) * 1938-09-21 1940-01-12 Westinghouse Freins & Signaux Perfectionnements à la fabrication de dispositifs à conductibilité asymétrique
BE436627A (de) * 1938-10-24
NL96218C (de) * 1939-01-11
DE760089C (de) * 1940-04-24 1954-08-16 Siemens Schuckertwerke A G Verfahren zur Verbesserung der Sperrwirkung von Selengleichrichtern
DE640567C (de) * 1966-09-08 1937-01-07 Siemens Schuckertwerke Akt Ges Trockenplattengleichrichter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968580C (de) * 1948-10-02 1958-03-06 Standard Elektrik Ag Verfahren zur Herstellung von Trockengleichrichtern
DE973817C (de) * 1951-03-05 1960-06-15 Licentia Gmbh Verfahren zur Herstellung eines Trockengleichrichters

Also Published As

Publication number Publication date
FR988428A (fr) 1951-08-27
DE884847C (de) 1953-07-30
US2488369A (en) 1949-11-15
NL70500C (de) 1900-01-01
GB596585A (en) 1948-01-07

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