CA980012A - Protective circuits - Google Patents

Protective circuits

Info

Publication number
CA980012A
CA980012A CA139,341A CA139341A CA980012A CA 980012 A CA980012 A CA 980012A CA 139341 A CA139341 A CA 139341A CA 980012 A CA980012 A CA 980012A
Authority
CA
Canada
Prior art keywords
protective circuits
circuits
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA139,341A
Other versions
CA139341S (en
Inventor
Robert G. Baugh
Armand J.A. Van Velthoven
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Application granted granted Critical
Publication of CA980012A publication Critical patent/CA980012A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CA139,341A 1971-06-08 1972-04-10 Protective circuits Expired CA980012A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15097271A 1971-06-08 1971-06-08

Publications (1)

Publication Number Publication Date
CA980012A true CA980012A (en) 1975-12-16

Family

ID=22536786

Family Applications (1)

Application Number Title Priority Date Filing Date
CA139,341A Expired CA980012A (en) 1971-06-08 1972-04-10 Protective circuits

Country Status (5)

Country Link
CA (1) CA980012A (en)
DE (1) DE2227339A1 (en)
FR (1) FR2140436B3 (en)
GB (1) GB1320290A (en)
IT (1) IT956338B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531846C2 (en) * 1974-07-16 1989-12-14 Nippon Electric Co., Ltd., Tokyo Protection circuit arrangement for an insulated gate field effect transistor
JPS58119670A (en) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd Semiconductor device
IT1213260B (en) * 1984-12-18 1989-12-14 Sgs Thomson Microelectronics BRIDGE CIRCUIT OF N-CHANNEL POWER MOS TRANSISTORS INTEGRATED AND PROCEDURE FOR ITS MANUFACTURE.
US5399893A (en) * 1993-08-24 1995-03-21 Motorola, Inc. Diode protected semiconductor device

Also Published As

Publication number Publication date
FR2140436A1 (en) 1973-01-19
IT956338B (en) 1973-10-10
FR2140436B3 (en) 1975-08-08
GB1320290A (en) 1973-06-13
DE2227339A1 (en) 1972-12-21

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