CA979527A - Resistor sensing bit switch - Google Patents

Resistor sensing bit switch

Info

Publication number
CA979527A
CA979527A CA156,034A CA156034A CA979527A CA 979527 A CA979527 A CA 979527A CA 156034 A CA156034 A CA 156034A CA 979527 A CA979527 A CA 979527A
Authority
CA
Canada
Prior art keywords
bit switch
sensing bit
resistor sensing
resistor
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA156,034A
Other languages
English (en)
Inventor
Scott C. Lewis
Howard Leung
Joseph M. Redmond
Frederick T. Blount
Richard D. Moore
Henry A. Geller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA979527A publication Critical patent/CA979527A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415Address circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416Read-write [R-W] circuits 
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6221Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors combined with selecting means
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
CA156,034A 1971-11-11 1972-11-08 Resistor sensing bit switch Expired CA979527A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19791071A 1971-11-11 1971-11-11

Publications (1)

Publication Number Publication Date
CA979527A true CA979527A (en) 1975-12-09

Family

ID=22731233

Family Applications (1)

Application Number Title Priority Date Filing Date
CA156,034A Expired CA979527A (en) 1971-11-11 1972-11-08 Resistor sensing bit switch

Country Status (7)

Country Link
US (1) US3736573A (de)
JP (1) JPS5321623B2 (de)
CA (1) CA979527A (de)
DE (1) DE2246756C3 (de)
FR (1) FR2186699B1 (de)
GB (1) GB1369726A (de)
IT (1) IT969826B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52144238A (en) * 1976-05-27 1977-12-01 Toshiba Corp Semiconductor memory circuit
JPS5639335U (de) * 1979-09-04 1981-04-13
DE3004565C2 (de) * 1980-02-07 1984-06-14 Siemens AG, 1000 Berlin und 8000 München Integrierte digitale Halbleiterschaltung
US5241503A (en) * 1991-02-25 1993-08-31 Motorola, Inc. Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405399A (en) * 1964-06-16 1968-10-08 Sperry Rand Corp Matrix selection circuit
US3363115A (en) * 1965-03-29 1968-01-09 Gen Micro Electronics Inc Integral counting circuit with storage capacitors in the conductive path of steering gate circuits
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3537078A (en) * 1968-07-11 1970-10-27 Ibm Memory cell with a non-linear collector load
US3609712A (en) * 1969-01-15 1971-09-28 Ibm Insulated gate field effect transistor memory array
US3617772A (en) * 1969-07-09 1971-11-02 Ibm Sense amplifier/bit driver for a memory cell
DE2002708C3 (de) * 1970-01-22 1978-09-28 Ibm Deutschland Gmbh, 7000 Stuttgart Speicheranordnung mit bistabilen Kippschaltungen
US3636377A (en) * 1970-07-21 1972-01-18 Semi Conductor Electronic Memo Bipolar semiconductor random access memory

Also Published As

Publication number Publication date
FR2186699A1 (de) 1974-01-11
DE2246756C3 (de) 1982-04-01
FR2186699B1 (de) 1976-01-30
DE2246756A1 (de) 1973-05-17
DE2246756B2 (de) 1981-07-16
JPS5321623B2 (de) 1978-07-04
US3736573A (en) 1973-05-29
GB1369726A (en) 1974-10-09
JPS4859741A (de) 1973-08-22
IT969826B (it) 1974-04-10

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