CA975872A - Variable resistance field effect transistor - Google Patents

Variable resistance field effect transistor

Info

Publication number
CA975872A
CA975872A CA163,350A CA163350A CA975872A CA 975872 A CA975872 A CA 975872A CA 163350 A CA163350 A CA 163350A CA 975872 A CA975872 A CA 975872A
Authority
CA
Canada
Prior art keywords
field effect
effect transistor
variable resistance
resistance field
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA163,350A
Other versions
CA163350S (en
Inventor
Michio Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1513272A external-priority patent/JPS5329075B2/ja
Priority claimed from JP6606972A external-priority patent/JPS5214077B2/ja
Priority claimed from JP6607272A external-priority patent/JPS4924679A/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA975872A publication Critical patent/CA975872A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CA163,350A 1972-02-12 1973-02-09 Variable resistance field effect transistor Expired CA975872A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1513272A JPS5329075B2 (en) 1972-02-12 1972-02-12
JP6606972A JPS5214077B2 (en) 1972-06-30 1972-06-30
JP6607272A JPS4924679A (en) 1972-06-30 1972-06-30

Publications (1)

Publication Number Publication Date
CA975872A true CA975872A (en) 1975-10-07

Family

ID=27280887

Family Applications (1)

Application Number Title Priority Date Filing Date
CA163,350A Expired CA975872A (en) 1972-02-12 1973-02-09 Variable resistance field effect transistor

Country Status (2)

Country Link
CA (1) CA975872A (en)
DE (1) DE2306828A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2503800C2 (en) * 1975-01-30 1984-02-16 Sony Corp., Tokyo Junction field effect transistor

Also Published As

Publication number Publication date
DE2306828A1 (en) 1973-08-16

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