CA954426A - Chemical growth of insulating layers on gallium arsenide - Google Patents
Chemical growth of insulating layers on gallium arsenideInfo
- Publication number
- CA954426A CA954426A CA138,932A CA138932A CA954426A CA 954426 A CA954426 A CA 954426A CA 138932 A CA138932 A CA 138932A CA 954426 A CA954426 A CA 954426A
- Authority
- CA
- Canada
- Prior art keywords
- insulating layers
- gallium arsenide
- chemical growth
- growth
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02241—III-V semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15688671A | 1971-06-25 | 1971-06-25 | |
US21099271A | 1971-12-22 | 1971-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA954426A true CA954426A (en) | 1974-09-10 |
Family
ID=26853613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA138,932A Expired CA954426A (en) | 1971-06-25 | 1972-04-05 | Chemical growth of insulating layers on gallium arsenide |
Country Status (8)
Country | Link |
---|---|
BE (1) | BE785330A (en) |
CA (1) | CA954426A (en) |
DE (1) | DE2230150A1 (en) |
FR (1) | FR2143453A1 (en) |
GB (1) | GB1378200A (en) |
IT (1) | IT966929B (en) |
NL (1) | NL7208417A (en) |
SE (1) | SE379063B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2413608C2 (en) * | 1974-03-21 | 1982-09-02 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Method for manufacturing a semiconductor component |
JP3122125B2 (en) * | 1989-05-07 | 2001-01-09 | 忠弘 大見 | Method of forming oxide film |
-
1972
- 1972-04-05 CA CA138,932A patent/CA954426A/en not_active Expired
- 1972-06-16 SE SE7207978A patent/SE379063B/xx unknown
- 1972-06-20 NL NL7208417A patent/NL7208417A/xx unknown
- 1972-06-21 DE DE2230150A patent/DE2230150A1/en active Pending
- 1972-06-22 GB GB2933172A patent/GB1378200A/en not_active Expired
- 1972-06-23 BE BE785330A patent/BE785330A/en unknown
- 1972-06-23 FR FR7222919A patent/FR2143453A1/fr not_active Withdrawn
- 1972-06-23 IT IT69048/72A patent/IT966929B/en active
Also Published As
Publication number | Publication date |
---|---|
DE2230150A1 (en) | 1973-01-11 |
BE785330A (en) | 1972-10-16 |
IT966929B (en) | 1974-02-20 |
FR2143453A1 (en) | 1973-02-02 |
NL7208417A (en) | 1972-12-28 |
SE379063B (en) | 1975-09-22 |
GB1378200A (en) | 1974-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA990186A (en) | Method of depositing epitaxial semiconductor layers from the liquid phase | |
AU459386B2 (en) | Semiconductor epitaxial growth from solution | |
CA976365A (en) | Methods of producing superconductors | |
CA1002433A (en) | Monocrystals of iii-v semiconductor compounds | |
CA921374A (en) | Removal of projections on epitaxial layers | |
AU4043672A (en) | Stabilisation of peroxy-materials | |
CA954426A (en) | Chemical growth of insulating layers on gallium arsenide | |
CA940805A (en) | Fabrication of gallium arsenide devices | |
CA955542A (en) | Locking devices | |
CA1014693A (en) | Organic semiconductors | |
CA991196A (en) | Controlled oxidation of ethylene | |
CA983684A (en) | Superconductors | |
CA938738A (en) | Superconductors | |
AU457349B2 (en) | Preservation of beer | |
AU4778572A (en) | Preservation of vegetables | |
CA888987A (en) | Growth of insulating films | |
AU461399B2 (en) | Method of obtaining gallium aluminium arsenide foran electroluminescent diode | |
CA872072A (en) | Expansible carrying case with band latch | |
CA1003850A (en) | Dehydrogenation of organic compounds | |
CA863528A (en) | Semiconductor networks | |
CA848403A (en) | Epitaxially grown layers of binary semiconductor compounds | |
CA905266A (en) | Manufacture of high-purity gallium arsenide | |
CA863542A (en) | Method of making semiconductor devices | |
CA888446A (en) | Manufacture of composite semiconductor devices | |
CA866996A (en) | Methods of manufacturing semiconductor devices |