CA2398632A1 - Photonic bandgap materials based on silicon - Google Patents

Photonic bandgap materials based on silicon Download PDF

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Publication number
CA2398632A1
CA2398632A1 CA002398632A CA2398632A CA2398632A1 CA 2398632 A1 CA2398632 A1 CA 2398632A1 CA 002398632 A CA002398632 A CA 002398632A CA 2398632 A CA2398632 A CA 2398632A CA 2398632 A1 CA2398632 A1 CA 2398632A1
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CA
Canada
Prior art keywords
pbg
template
photonic
materials
synthesis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA002398632A
Other languages
French (fr)
Other versions
CA2398632C (en
Inventor
Geoffrey Alan Ozin
Ceferino Lopez Fernandez
Francisco Javier Meseguer Rico
Sajeev John
Emmanuel Benjamin Chomski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Toronto
Consejo Superior de Investigaciones Cientificas CSIC
Universidad Politecnica de Valencia
Original Assignee
The Governing Council Of The University Of Toronto
Geoffrey Alan Ozin
Ceferino Lopez Fernandez
Francisco Javier Meseguer Rico
Universidad Politecnica De Valencia
Consejo Superior De Investigaciones Cientificas
Sajeev John
Emmanuel Benjamin Chomski
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by The Governing Council Of The University Of Toronto, Geoffrey Alan Ozin, Ceferino Lopez Fernandez, Francisco Javier Meseguer Rico, Universidad Politecnica De Valencia, Consejo Superior De Investigaciones Cientificas, Sajeev John, Emmanuel Benjamin Chomski filed Critical The Governing Council Of The University Of Toronto
Publication of CA2398632A1 publication Critical patent/CA2398632A1/en
Application granted granted Critical
Publication of CA2398632C publication Critical patent/CA2398632C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Compounds (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Method of synthesis of photonic band gap (PBG) materials. The synthesis and characterization of high quality, very large scale, face centered cubic photonic band gap (PBG) materials consisting of pure silicon, exhibiting a complete three-dimensional PBG centered on a wavelength of 1.5 µ.m. This is obtained by chemical vapor deposition and anchoring of disilane into a self-assembling silica opal template, wetting of a thick silicon layer on the interior surfaces of the template, and subsequent removal of the template. This achievement realizes a long standing goal in photonic materials and opens a new door for complete control of radiative emission from atoms and molecules, light localization and the integration of micron scale photonic devices into a three-dimensional all-optical micro-chip.
CA002398632A 2000-01-28 2001-01-24 Photonic bandgap materials based on silicon Expired - Lifetime CA2398632C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17877300P 2000-01-28 2000-01-28
US60/178,773 2000-01-28
PCT/CA2001/000049 WO2001055484A2 (en) 2000-01-28 2001-01-24 Photonic bandgap materials based on silicon

Publications (2)

Publication Number Publication Date
CA2398632A1 true CA2398632A1 (en) 2001-08-02
CA2398632C CA2398632C (en) 2009-04-28

Family

ID=22653895

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002398632A Expired - Lifetime CA2398632C (en) 2000-01-28 2001-01-24 Photonic bandgap materials based on silicon

Country Status (4)

Country Link
EP (1) EP1279053A2 (en)
AU (1) AU2001228217A1 (en)
CA (1) CA2398632C (en)
WO (1) WO2001055484A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001086038A2 (en) * 2000-05-05 2001-11-15 Universidad Politecnica De Valencia Photonic bandgap materials based on germanium
US6611085B1 (en) * 2001-08-27 2003-08-26 Sandia Corporation Photonically engineered incandescent emitter
WO2004063432A1 (en) * 2003-01-10 2004-07-29 The Governing Council Of The University Of Toronto Method of synthesis of 3d silicon colloidal photonic crystals by micromolding in inverse silica opal (miso)
JP4430622B2 (en) 2003-12-05 2010-03-10 スリーエム イノベイティブ プロパティズ カンパニー Photonic crystal manufacturing method
US7106938B2 (en) 2004-03-16 2006-09-12 Regents Of The University Of Minnesota Self assembled three-dimensional photonic crystal

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU418170B2 (en) * 1964-10-02 1971-10-11 Commonwealth Scientific And Industrial Researc Organization Opaline materials
US4983369A (en) * 1989-11-22 1991-01-08 Allied-Signal Inc. Process for forming highly uniform silica spheres
JP3746301B2 (en) * 1991-11-14 2006-02-15 触媒化成工業株式会社 Method for producing spherical silica particles
JP3330984B2 (en) * 1992-09-04 2002-10-07 株式会社オハラ Method for producing monodisperse spherical silica
US5600483A (en) * 1994-05-10 1997-02-04 Massachusetts Institute Of Technology Three-dimensional periodic dielectric structures having photonic bandgaps
US6261469B1 (en) * 1998-10-13 2001-07-17 Honeywell International Inc. Three dimensionally periodic structural assemblies on nanometer and longer scales

Also Published As

Publication number Publication date
WO2001055484A2 (en) 2001-08-02
EP1279053A2 (en) 2003-01-29
CA2398632C (en) 2009-04-28
WO2001055484A3 (en) 2002-04-18
AU2001228217A1 (en) 2001-08-07

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