CA1199715A - Techniques de masquage en deposition a la vapeur chimique - Google Patents
Techniques de masquage en deposition a la vapeur chimiqueInfo
- Publication number
- CA1199715A CA1199715A CA000469857A CA469857A CA1199715A CA 1199715 A CA1199715 A CA 1199715A CA 000469857 A CA000469857 A CA 000469857A CA 469857 A CA469857 A CA 469857A CA 1199715 A CA1199715 A CA 1199715A
- Authority
- CA
- Canada
- Prior art keywords
- mask
- thc
- growth
- semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA000469857A CA1199715A (fr) | 1981-02-04 | 1984-12-11 | Techniques de masquage en deposition a la vapeur chimique |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US231,556 | 1981-02-04 | ||
US06/231,556 US4448797A (en) | 1981-02-04 | 1981-02-04 | Masking techniques in chemical vapor deposition |
CA000393643A CA1194196A (fr) | 1981-02-04 | 1982-01-06 | Techniques de masquage en deposition a la vapeur chimique |
CA000469857A CA1199715A (fr) | 1981-02-04 | 1984-12-11 | Techniques de masquage en deposition a la vapeur chimique |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000393643A Division CA1194196A (fr) | 1981-02-04 | 1982-01-06 | Techniques de masquage en deposition a la vapeur chimique |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1199715A true CA1199715A (fr) | 1986-01-21 |
Family
ID=25669522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000469857A Expired CA1199715A (fr) | 1981-02-04 | 1984-12-11 | Techniques de masquage en deposition a la vapeur chimique |
Country Status (1)
Country | Link |
---|---|
CA (1) | CA1199715A (fr) |
-
1984
- 1984-12-11 CA CA000469857A patent/CA1199715A/fr not_active Expired
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA1194196A (fr) | Techniques de masquage en deposition a la vapeur chimique | |
KR100623564B1 (ko) | Ⅲ족 질화물계 화합물 반도체 소자 | |
KR100917260B1 (ko) | 결정막, 결정기판 및 반도체장치 | |
US6562701B2 (en) | Method of manufacturing nitride semiconductor substrate | |
US6599362B2 (en) | Cantilever epitaxial process | |
EP1178523B1 (fr) | PROCEDE DE CROISSANCE DE CRISTAUX SEMICONDUCTEURS COMPOSES DE GaN, ET SUBSTRAT DE SEMICONDUCTEUR | |
US20020027933A1 (en) | Semiconductor light emitting device and semiconductor laser | |
JP2003249453A (ja) | 窒化ガリウム基板の製造方法 | |
JPH10321911A (ja) | 単結晶シリコン上に化合物半導体のエピタキシヤル層を製造する方法及びそれにより製造された発光ダイオード | |
US5073893A (en) | Semiconductor structure and semiconductor laser device | |
Azoulay et al. | Selective MOCVD epitaxy for optoelectronic devices | |
US20010025989A1 (en) | Semiconductor device and method of manufacturing the same | |
US4447904A (en) | Semiconductor devices with nonplanar characteristics produced in chemical vapor deposition | |
JP4106516B2 (ja) | 窒化物半導体基板の成長方法 | |
CA1199715A (fr) | Techniques de masquage en deposition a la vapeur chimique | |
JPH07321420A (ja) | 量子閉じ込めデバイス、量子閉じ込めデバイスを備えた光検出器、量子閉じ込めデバイスを備えたレーザ、および量子閉じ込めデバイスの製造方法 | |
US5741360A (en) | Method of growing a crystal of a compound semiconductor at a low temperature | |
KR100219837B1 (ko) | 선택성장법에 의한 고밀도 양자점 어레이 형성방법 | |
JPH09283796A (ja) | 半導体素子の水平方向pn接合アレイ製造方法 | |
KR100239677B1 (ko) | 격자 부정합을 이용한 광전소자용 광 및 전류차단구조 및 그 제 조방법 | |
TW439335B (en) | A semiconductor laser and the fabrication method thereof | |
JP2002118326A (ja) | 窒化物半導体成長方法および窒化物半導体発光素子 | |
KR100234005B1 (ko) | 산화알루미늄갈륨비소를 이용한 광전소자의 전류차단구조 형성방법 | |
JP3026389B2 (ja) | 半導体装置とその製造方法 | |
JP2001274517A (ja) | 半導体素子用基板およびその製造方法およびその半導体素子用基板を用いた半導体素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |