CA1139893A - Transistor a effet de champ et methode de fabrication - Google Patents

Transistor a effet de champ et methode de fabrication

Info

Publication number: CA1139893A
Authority: CA; Canada
Prior art keywords: semiconductor; gate regions; layer; regions; field effect
Prior art date: 1979-11-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000354607A

Other languages

English (en)

Inventor

Yasunobu Ishii

Kazuyoshi Asai

Katsuhiko Kurumada

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Nippon Telegraph and Telephone Corp

Original Assignee

Nippon Telegraph and Telephone Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-11-26

Filing date

1980-06-23

Publication date

1983-01-18

1980-06-23 Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp

1983-01-18 Application granted granted Critical

1983-01-18 Publication of CA1139893A publication Critical patent/CA1139893A/fr

Status Expired legal-status Critical Current

Links

230000005669 field effect Effects 0.000 title claims abstract description 35
238000000034 method Methods 0.000 title claims description 19
238000004519 manufacturing process Methods 0.000 title claims description 18
239000004065 semiconductor Substances 0.000 claims abstract description 157
150000001875 compounds Chemical class 0.000 claims abstract description 25
229910052751 metal Inorganic materials 0.000 claims description 32
239000002184 metal Substances 0.000 claims description 32
239000012535 impurity Substances 0.000 claims description 24
230000015572 biosynthetic process Effects 0.000 claims description 4
239000000758 substrate Substances 0.000 abstract description 43
239000006185 dispersion Substances 0.000 abstract description 4
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 17
229910001218 Gallium arsenide Inorganic materials 0.000 description 17
150000002500 ions Chemical class 0.000 description 9
238000010276 construction Methods 0.000 description 5
239000013078 crystal Substances 0.000 description 5
238000000137 annealing Methods 0.000 description 4
229910052790 beryllium Inorganic materials 0.000 description 4
230000000694 effects Effects 0.000 description 4
230000004888 barrier function Effects 0.000 description 3
229910052793 cadmium Inorganic materials 0.000 description 3
229910052804 chromium Inorganic materials 0.000 description 3
239000011651 chromium Substances 0.000 description 3
238000005530 etching Methods 0.000 description 3
229910052750 molybdenum Inorganic materials 0.000 description 3
238000001771 vacuum deposition Methods 0.000 description 3
229910052725 zinc Inorganic materials 0.000 description 3
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
230000007423 decrease Effects 0.000 description 2
230000007547 defect Effects 0.000 description 2
238000002513 implantation Methods 0.000 description 2
238000005468 ion implantation Methods 0.000 description 2
229910017401 Au—Ge Inorganic materials 0.000 description 1
241000905957 Channa melasoma Species 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
230000003213 activating effect Effects 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
230000000977 initiatory effect Effects 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
239000000203 mixture Substances 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
238000001259 photo etching Methods 0.000 description 1
QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
239000007787 solid Substances 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Junction Field-Effect Transistors (AREA)

CA000354607A 1979-11-26 1980-06-23 Transistor a effet de champ et methode de fabrication Expired CA1139893A (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP153451/'79		1979-11-26
JP15345179A JPS5676576A (en)	1979-11-26	1979-11-26	Semiconductor device and manufacture thereof

Publications (1)

Publication Number	Publication Date
CA1139893A true CA1139893A (fr)	1983-01-18

Family

ID=15562833

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000354607A Expired CA1139893A (fr)	1979-11-26	1980-06-23	Transistor a effet de champ et methode de fabrication

Country Status (5)

Country	Link
JP (1)	JPS5676576A (fr)
CA (1)	CA1139893A (fr)
DE (1)	DE3024826C2 (fr)
GB (1)	GB2065967B (fr)
NL (1)	NL189534C (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2501913A1 (fr) *	1981-03-10	1982-09-17	Thomson Csf	Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
KR920022546A (ko) *	1991-05-31	1992-12-19	김광호	모오스 트랜지스터의 구조 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2728532A1 (de) *	1977-06-24	1979-01-11	Siemens Ag	Sperrschicht-feldeffekttransistor
NL188776C (nl) *	1979-04-21	1992-09-16	Nippon Telegraph & Telephone	Veldeffecttransistorinrichting en werkwijze voor het vervaardigen daarvan.

1979
- 1979-11-26 JP JP15345179A patent/JPS5676576A/ja active Pending
1980
- 1980-06-23 CA CA000354607A patent/CA1139893A/fr not_active Expired
- 1980-07-01 DE DE19803024826 patent/DE3024826C2/de not_active Expired
- 1980-07-03 GB GB8021812A patent/GB2065967B/en not_active Expired
- 1980-07-09 NL NL8003944A patent/NL189534C/xx not_active IP Right Cessation

Also Published As

Publication number	Publication date
JPS5676576A (en)	1981-06-24
GB2065967A (en)	1981-07-01
GB2065967B (en)	1983-07-13
NL8003944A (nl)	1981-06-16
NL189534C (nl)	1993-05-03
NL189534B (nl)	1992-12-01
DE3024826A1 (de)	1981-05-27
DE3024826C2 (de)	1985-05-09

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Legal Events

Date	Code	Title	Description
2000-01-18	MKEX	Expiry