CA1076700A - Complementary input structure for charge coupled device - Google Patents
Complementary input structure for charge coupled deviceInfo
- Publication number
- CA1076700A CA1076700A CA258,768A CA258768A CA1076700A CA 1076700 A CA1076700 A CA 1076700A CA 258768 A CA258768 A CA 258768A CA 1076700 A CA1076700 A CA 1076700A
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- charge
- channel
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- channels
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- 230000000295 complement effect Effects 0.000 title abstract description 10
- 238000007667 floating Methods 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims 1
- 230000009977 dual effect Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Filters That Use Time-Delay Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
COMPLEMENTARY INPUT STRUCTURE FOR CHARGE COUPLED DEVICE
Abstract of the Disclosure An input structure for a charge coupled device (CCD) which develops a charge proportional to a signal in one channel, and the complement of that charge in a second channel. The dual channel CCD can be used in transversal filter applications without the need for a differential amplifier at its output.
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Abstract of the Disclosure An input structure for a charge coupled device (CCD) which develops a charge proportional to a signal in one channel, and the complement of that charge in a second channel. The dual channel CCD can be used in transversal filter applications without the need for a differential amplifier at its output.
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Description
107f~700 This invention relates to an input structure which provides complementary signals in two channels of a charge coupled device and more particularly to one which may be used to implement transversal flltering ; in such a device without the need for an associated operational amplifier.
Background of the Invention In an article entltled: "Charge-Coupled Devices - A New Approach to MIS Device Structure", IEEE Spectrum, July 1971, pp 18-27, W.S. 80yle and G.. Smith describe a new information-handling structure, the charge-coupled device, (CCD). The device stores a minority-carrier charge in potential wells created at the surface of a semiconductor and transports the charge along the surface by the application of bias potentials to control electrodes so as to move the potential wells.
;~ Numerous applications have been proposed for the CCD. It can be utilized as a transversal filter, such as described in an article by A.Ibrahim et al entitled: "Multiple Filter Characteristics Using a ~ Single CCD Structure", International Conference on the Application of !~ Charge-Coupled Devices, October, pp 245-249; or as a recursive filter, such as described in an article by D.A. Sealer and M.F. Tompsett entitled:
"A Dual Differential Analog CCD For Time-Shared Recursive Filters", ISSCC
February 1975, pp 152-153. One disadvantage of prior structures of this type is that in order to provide both positive and negative coefficients of the sampled signals, it is necessary to subtract two charge signals at each delay stage. This is generally achieved utilizing a differential ~ amplifier. However, the success of this approach requires the integration ; of a MOST (metal-oxide-silicon-transistor) operational amplifier on the same chip as the CCD, to reduce the final cost.
Statement of the Invention The present invention provides a unique input structure for providing complementary charges in two CCD channels which permits weighting and direct summing of the detected signals thereby negating the requirement for a differential amplifier.
~ 7 6~7 0 0 Thus, in accordance with the present invention there is provided a complementary input structure for a multi-channel charge coupled device comprising: a charge storage body, a dielectric layer disposed over the body and a pair of channels each having a plurality of electrodes disposed over the dielectric layer for controlling the sequential transfer of mobile charges along the body in response to clock voltages applied thereto. The input structure comprises a common input electrode disposed over the dielectric layer adjacent the head of each channel for controlling a charge of fixed magnitude in the body from an adjacent source. In addition, the input structure includes a control electrode at the head of each channel in juxtaposition with the common input electrode and individually responsive to separate control signals for transferring a selected portion of the fixed magnitude charge to one channel and the balance to the other channel, whereby the charge in the other channel is the complement of that in said one channel.
In a particular embodiment, selected ones of the electrodes in each of the two channels are divided along the length of the channel to divide the charges being transferred therebeneath in preselected ratios.
One portion of each of the divided electrodes from both channels are connected in common, whereby the total charge beneath the common portions of the divided electrodes is a function of the individual magnitude of the charges being transferred along the two channels and the relative division of each of the electrodes in the two channels.
Brief Description of the Drawings An example embodiment of the invention will now be described with reference to the accompanying drawings in which:
I Figure 1 is a pictorial plan view of a dual channel charge coupled device including an input structure in accordance with the present invention;
Figure 2 is a pictorial diagram of a side elevational view of the structure illustrated in Figure l; and
Background of the Invention In an article entltled: "Charge-Coupled Devices - A New Approach to MIS Device Structure", IEEE Spectrum, July 1971, pp 18-27, W.S. 80yle and G.. Smith describe a new information-handling structure, the charge-coupled device, (CCD). The device stores a minority-carrier charge in potential wells created at the surface of a semiconductor and transports the charge along the surface by the application of bias potentials to control electrodes so as to move the potential wells.
;~ Numerous applications have been proposed for the CCD. It can be utilized as a transversal filter, such as described in an article by A.Ibrahim et al entitled: "Multiple Filter Characteristics Using a ~ Single CCD Structure", International Conference on the Application of !~ Charge-Coupled Devices, October, pp 245-249; or as a recursive filter, such as described in an article by D.A. Sealer and M.F. Tompsett entitled:
"A Dual Differential Analog CCD For Time-Shared Recursive Filters", ISSCC
February 1975, pp 152-153. One disadvantage of prior structures of this type is that in order to provide both positive and negative coefficients of the sampled signals, it is necessary to subtract two charge signals at each delay stage. This is generally achieved utilizing a differential ~ amplifier. However, the success of this approach requires the integration ; of a MOST (metal-oxide-silicon-transistor) operational amplifier on the same chip as the CCD, to reduce the final cost.
Statement of the Invention The present invention provides a unique input structure for providing complementary charges in two CCD channels which permits weighting and direct summing of the detected signals thereby negating the requirement for a differential amplifier.
~ 7 6~7 0 0 Thus, in accordance with the present invention there is provided a complementary input structure for a multi-channel charge coupled device comprising: a charge storage body, a dielectric layer disposed over the body and a pair of channels each having a plurality of electrodes disposed over the dielectric layer for controlling the sequential transfer of mobile charges along the body in response to clock voltages applied thereto. The input structure comprises a common input electrode disposed over the dielectric layer adjacent the head of each channel for controlling a charge of fixed magnitude in the body from an adjacent source. In addition, the input structure includes a control electrode at the head of each channel in juxtaposition with the common input electrode and individually responsive to separate control signals for transferring a selected portion of the fixed magnitude charge to one channel and the balance to the other channel, whereby the charge in the other channel is the complement of that in said one channel.
In a particular embodiment, selected ones of the electrodes in each of the two channels are divided along the length of the channel to divide the charges being transferred therebeneath in preselected ratios.
One portion of each of the divided electrodes from both channels are connected in common, whereby the total charge beneath the common portions of the divided electrodes is a function of the individual magnitude of the charges being transferred along the two channels and the relative division of each of the electrodes in the two channels.
Brief Description of the Drawings An example embodiment of the invention will now be described with reference to the accompanying drawings in which:
I Figure 1 is a pictorial plan view of a dual channel charge coupled device including an input structure in accordance with the present invention;
Figure 2 is a pictorial diagram of a side elevational view of the structure illustrated in Figure l; and
- 2 -Figure 3 illustrates typical waveforms of the various clock voltages which are applied to the device illustrated in Figures 1 and 2.
Description of the Preferred Embddiment The fabrication of the charge coupled device described herein utilizes technologies well established and known in the semiconductor field. It is therefore considered unnecessary to describe in detail the individual steps for forming the device. However, Canadian Patent No. 941,072 issued January 29, 1974 to James J. White describes one method of constructing a two-level poly-silicon charge coupled device which is the basic structure of the device disclosed herein. Also, it is evident that the figures shown in the drawings are exemplary of the construction of the invention and not necessarily drawn to scale.
In the following detailed description and accompanying ; drawings basic reference numerals are assigned to individual elements of the device. Where it is necessary to distinguish between repetitive elements in a row additional reference characters are added to the base ;~ number. In general, reference is made only to the base number.
Referring to Figures 1 and 2, the two-phase charge coupled device comprises a charge storage body 10 of p-type silicon having a variable thickness silicon dioxide (SiO2) insulating layer 11 deposited ~ thereon. A row of alternately upper 12 and lower 13 elongated ; poly-silicon electrodes laterally disposed so as to overlap adjacent ones thereto, have been deposited on the insulating layer 11. As will be manifest hereinafter, the lower electrodes 13 function as storage control electrodes while the upper electrodes 12 function as transfer gates in a well known manner.
As illustrated in Figure 1, the silicon dioxide insulating layer 11 includes gate oxide regions 15 beneath which the packets of charge are transferred in n-channels along the row under control of clock voltages applied to the field plates 12 and 13. These gate oxide regions 15 consist of alternating thicknesses of insulating layer 11 which is .... . . .
.. ~ ~ . . . . . . .
107~00 approximately 1100 ~ thick under the storage electrodes 13 and 3000 Q thick under the transfer electrodes 12. The surrounding thicker portions are designated as field oxide regions 16. These latter regions 16 are sufficiently thick (approximately 1.2~m) that the portions of the semiconductor substrate 10 immediately beneath them do not invert in response to the application of clock voltages to the electrodes 12 and 13.
Consequently, the minority-carrier charges are only carried along the substrate 10 immediately adjacent the gate oxide regions 15.
At the head of the channels 15 is a diffused n+ source of mobile charges or carriers 20. This is followed by a transfer gate 12R
and an initial storage electrode 13R which is common to both channels 15.
Immediately adjacent the common storage electrode 13R in each channel 15A
and 15B is a control electrode 12A and 12V respectively. Unlike the balance of the electrodes in the channels 15, these electrodes 12R, 13R, 12A and 12V are controlled by separate clocks as will be described hereinafter.
In addition, it can be seen that every second storage electrode 13 is divided along the length of the channel 15 with the inward facing portions of the divided electrodes 13J, 13K, 13L and 13M being connected in common. These divided electrodes provide the weighting ` factor during the nondestructive sensing of the magnitude of the analog charges being transferred along the channels 15.
In Figures 1 and 2, the clock drives are identified by reference characters 01' P2- 0s' 0sl and 0s2 having voltage waveforms identified by corresponding reference characters in Figure 3. Referring I now to all three figures, at time tl, the clock drives Pl and 0s 9 high ¦ and a mobile charge of electrons is transferred from the source 20 to beneath the storage electrode 13R which has a fixed reference voltage VRR
applied thereto. This reference voltage VRR is selected to provide a ~; 3Q charge QRR under electrode 13R of a preselected magnitude which acts as a virtual source of charge for the two channels 15A and 15B. At time t2, 05 goes low and 0sl goes high. This signal 0sl is the composite of a d-c bias voltage V8 and an a-c signal VS such as from a transmission line (not shown). Since electrode 13A has already been driven high by clock 01 at time tl, the signal under control of clock 0sl transfers a preselected portion of the charge QRS to beneath the storage electrode 13A.
At time t3, PSl goes low and PS2 goes high. This applies sufficient voltage to transfer gate 12V to transfer the balance of the , charge beneath the electrode 13R to beneath the storage electrode 13V
` which has also been driven high. Thus, the charge stored beneath the electrode 13V, QRR-QRS is the complement of the charge stored beneath the electrode 13A. At time t4, clock 02 goes high, followed by clock Pl going low which transfers or dumps the charge beneath the electrodes 13A
and 13V to beneath the divided or split electrodes 13B, 13J, 13L and 13W
in a well known manner.
; Since the magnitude of the voltage applied to each half of the divided electrodes is the same, the charge will split between the two in accordance with the relative length of each electrode.
The relative magnitude of the total charge beneath the electrodes 13J, 13L, 13K and 13M can be monitored by a floating gate sensing network 16 using a nondestructive sensing technique such as described in the above-mentioned paper by A.Ibrahim et al.
In a typical application of a CCD transversal filter an a-c signal v5 superimposed on a d-c bias voltage VB is applied via clock 0S1 to gate electrode 12A, to transfer a preselected portion QRS
of the charge QRR previously stored beneath storage electrode 13R to beneath electrode 13A. The complement or balance of this charge QRR-QRs is then transferred beneath storage electrode 13V under control of clock 0s2 The charges are then concurrently transferred along the channels 15A and 15B under control of clocks Pl and P2. At each of the 3Q: split electrodes 13 the weighting factors are determined by the relative lengths. By repeatedly nondestructively sampling the weighted charge ,,. ~.-. ~ . - , .
107~700 under the various split storage electrodes 13 and summing their outputs in the network 16, an output signal from the electrode 17 can be obtained which is proportional to the magnitude of the charges being transferred along both channels 15A and 15B and the relative weighting determined by the divisîon of the split electrodes. Because the complement of the charge being transferred along channel 15A is transferred along channel 15B, the sensed signals can be summed directly without the necessity of providing a differential ampllfier. This technique results in a d-c offset on the sensed signal on electrode 17 which can be readily removed in the output network 16.
While the floating gate sensing network utilizes semiconductor amplifiers, these can be readily constructed utilizing MOS (metal-oxide-silicon) technology, the same as that used to construct the CCD. Also it will be understood that the entire structure could be implemented utilizing p-channel technology on a n-type silicon substrate.
f ~ :
'' , ' "': ~ ' ,
Description of the Preferred Embddiment The fabrication of the charge coupled device described herein utilizes technologies well established and known in the semiconductor field. It is therefore considered unnecessary to describe in detail the individual steps for forming the device. However, Canadian Patent No. 941,072 issued January 29, 1974 to James J. White describes one method of constructing a two-level poly-silicon charge coupled device which is the basic structure of the device disclosed herein. Also, it is evident that the figures shown in the drawings are exemplary of the construction of the invention and not necessarily drawn to scale.
In the following detailed description and accompanying ; drawings basic reference numerals are assigned to individual elements of the device. Where it is necessary to distinguish between repetitive elements in a row additional reference characters are added to the base ;~ number. In general, reference is made only to the base number.
Referring to Figures 1 and 2, the two-phase charge coupled device comprises a charge storage body 10 of p-type silicon having a variable thickness silicon dioxide (SiO2) insulating layer 11 deposited ~ thereon. A row of alternately upper 12 and lower 13 elongated ; poly-silicon electrodes laterally disposed so as to overlap adjacent ones thereto, have been deposited on the insulating layer 11. As will be manifest hereinafter, the lower electrodes 13 function as storage control electrodes while the upper electrodes 12 function as transfer gates in a well known manner.
As illustrated in Figure 1, the silicon dioxide insulating layer 11 includes gate oxide regions 15 beneath which the packets of charge are transferred in n-channels along the row under control of clock voltages applied to the field plates 12 and 13. These gate oxide regions 15 consist of alternating thicknesses of insulating layer 11 which is .... . . .
.. ~ ~ . . . . . . .
107~00 approximately 1100 ~ thick under the storage electrodes 13 and 3000 Q thick under the transfer electrodes 12. The surrounding thicker portions are designated as field oxide regions 16. These latter regions 16 are sufficiently thick (approximately 1.2~m) that the portions of the semiconductor substrate 10 immediately beneath them do not invert in response to the application of clock voltages to the electrodes 12 and 13.
Consequently, the minority-carrier charges are only carried along the substrate 10 immediately adjacent the gate oxide regions 15.
At the head of the channels 15 is a diffused n+ source of mobile charges or carriers 20. This is followed by a transfer gate 12R
and an initial storage electrode 13R which is common to both channels 15.
Immediately adjacent the common storage electrode 13R in each channel 15A
and 15B is a control electrode 12A and 12V respectively. Unlike the balance of the electrodes in the channels 15, these electrodes 12R, 13R, 12A and 12V are controlled by separate clocks as will be described hereinafter.
In addition, it can be seen that every second storage electrode 13 is divided along the length of the channel 15 with the inward facing portions of the divided electrodes 13J, 13K, 13L and 13M being connected in common. These divided electrodes provide the weighting ` factor during the nondestructive sensing of the magnitude of the analog charges being transferred along the channels 15.
In Figures 1 and 2, the clock drives are identified by reference characters 01' P2- 0s' 0sl and 0s2 having voltage waveforms identified by corresponding reference characters in Figure 3. Referring I now to all three figures, at time tl, the clock drives Pl and 0s 9 high ¦ and a mobile charge of electrons is transferred from the source 20 to beneath the storage electrode 13R which has a fixed reference voltage VRR
applied thereto. This reference voltage VRR is selected to provide a ~; 3Q charge QRR under electrode 13R of a preselected magnitude which acts as a virtual source of charge for the two channels 15A and 15B. At time t2, 05 goes low and 0sl goes high. This signal 0sl is the composite of a d-c bias voltage V8 and an a-c signal VS such as from a transmission line (not shown). Since electrode 13A has already been driven high by clock 01 at time tl, the signal under control of clock 0sl transfers a preselected portion of the charge QRS to beneath the storage electrode 13A.
At time t3, PSl goes low and PS2 goes high. This applies sufficient voltage to transfer gate 12V to transfer the balance of the , charge beneath the electrode 13R to beneath the storage electrode 13V
` which has also been driven high. Thus, the charge stored beneath the electrode 13V, QRR-QRS is the complement of the charge stored beneath the electrode 13A. At time t4, clock 02 goes high, followed by clock Pl going low which transfers or dumps the charge beneath the electrodes 13A
and 13V to beneath the divided or split electrodes 13B, 13J, 13L and 13W
in a well known manner.
; Since the magnitude of the voltage applied to each half of the divided electrodes is the same, the charge will split between the two in accordance with the relative length of each electrode.
The relative magnitude of the total charge beneath the electrodes 13J, 13L, 13K and 13M can be monitored by a floating gate sensing network 16 using a nondestructive sensing technique such as described in the above-mentioned paper by A.Ibrahim et al.
In a typical application of a CCD transversal filter an a-c signal v5 superimposed on a d-c bias voltage VB is applied via clock 0S1 to gate electrode 12A, to transfer a preselected portion QRS
of the charge QRR previously stored beneath storage electrode 13R to beneath electrode 13A. The complement or balance of this charge QRR-QRs is then transferred beneath storage electrode 13V under control of clock 0s2 The charges are then concurrently transferred along the channels 15A and 15B under control of clocks Pl and P2. At each of the 3Q: split electrodes 13 the weighting factors are determined by the relative lengths. By repeatedly nondestructively sampling the weighted charge ,,. ~.-. ~ . - , .
107~700 under the various split storage electrodes 13 and summing their outputs in the network 16, an output signal from the electrode 17 can be obtained which is proportional to the magnitude of the charges being transferred along both channels 15A and 15B and the relative weighting determined by the divisîon of the split electrodes. Because the complement of the charge being transferred along channel 15A is transferred along channel 15B, the sensed signals can be summed directly without the necessity of providing a differential ampllfier. This technique results in a d-c offset on the sensed signal on electrode 17 which can be readily removed in the output network 16.
While the floating gate sensing network utilizes semiconductor amplifiers, these can be readily constructed utilizing MOS (metal-oxide-silicon) technology, the same as that used to construct the CCD. Also it will be understood that the entire structure could be implemented utilizing p-channel technology on a n-type silicon substrate.
f ~ :
'' , ' "': ~ ' ,
Claims (3)
PROPERTY OR PRIVILEGE IS CLAIMED ARE DEFINED AS FOLLOWS:
1. A charge coupled device comprising:
a charge storage body;
a dielectric layer disposed over the body;
a pair of channels each having a plurality of electrodes disposed over the dielectric layer for controlling the sequential transfer of mobile charges along the length of each channel in said body in response to clock voltages applied thereto;
a common input electrode adjacent the head of each channel for controlling a charge of fixed magnitude in said body from an adjacent source;
each channel having a control electrode in juxtaposition with the common input electrode, and individually responsive to separate control signals for transferring a selected portion of said fixed magnitude charge to one channel and the balance of the charge to the other channel;
at least one electrode in each channel being preselectively divided into two disconnected portions by a gap along the length of the channel, to divide the charges being transferred therebeneath in preselected ratios, one portion of each of the divided electrodes in each of the pair of channels being connected in common;
whereby the total charge beneath the common portions of the divided electrodes is a function of the individual magnitude of the charges being transferred along the two channels and the relative division of each of the electrodes in the two channels.
a charge storage body;
a dielectric layer disposed over the body;
a pair of channels each having a plurality of electrodes disposed over the dielectric layer for controlling the sequential transfer of mobile charges along the length of each channel in said body in response to clock voltages applied thereto;
a common input electrode adjacent the head of each channel for controlling a charge of fixed magnitude in said body from an adjacent source;
each channel having a control electrode in juxtaposition with the common input electrode, and individually responsive to separate control signals for transferring a selected portion of said fixed magnitude charge to one channel and the balance of the charge to the other channel;
at least one electrode in each channel being preselectively divided into two disconnected portions by a gap along the length of the channel, to divide the charges being transferred therebeneath in preselected ratios, one portion of each of the divided electrodes in each of the pair of channels being connected in common;
whereby the total charge beneath the common portions of the divided electrodes is a function of the individual magnitude of the charges being transferred along the two channels and the relative division of each of the electrodes in the two channels.
2. A charge coupled device as defined in claim 1 additionally including an input control circuit comprising:
means for initially applying a reference voltage of fixed magnitude to said common input electrode to obtain a charge of fixed magnitude therebeneath from said adjacent source;
thence, means for applying a signal of varying magnitude to the control electrode in one channel to transfer a selected portion of said fixed magnitude charge therebeneath;
thence, means for applying a voltage of fixed magnitude to the control electrode in the other channel to transfer the balance of the fixed magnitude charge therebeneath.
means for initially applying a reference voltage of fixed magnitude to said common input electrode to obtain a charge of fixed magnitude therebeneath from said adjacent source;
thence, means for applying a signal of varying magnitude to the control electrode in one channel to transfer a selected portion of said fixed magnitude charge therebeneath;
thence, means for applying a voltage of fixed magnitude to the control electrode in the other channel to transfer the balance of the fixed magnitude charge therebeneath.
3. A charge coupled device as defined in claim 1 which additionally includes a control circuit comprising:
means for generating a floating charge on the common portions of the divided electrodes; and means for monitoring the voltage change in the charge on the common portions of the divided electrodes when said mobile charges are transferred therebeneath.
means for generating a floating charge on the common portions of the divided electrodes; and means for monitoring the voltage change in the charge on the common portions of the divided electrodes when said mobile charges are transferred therebeneath.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA258,768A CA1076700A (en) | 1976-08-10 | 1976-08-10 | Complementary input structure for charge coupled device |
| NL7706624A NL7706624A (en) | 1976-08-10 | 1977-06-16 | COMPLEMENTARY INPUT CONSTRUCTION FOR LOAD-COUPLED DEVICE. |
| JP8364377A JPS5320871A (en) | 1976-08-10 | 1977-07-14 | Complementary input structure for charge coupled element |
| DE19772734366 DE2734366A1 (en) | 1976-08-10 | 1977-07-29 | COMPLEMENTARY INPUT STRUCTURE FOR A CHARGE-COUPLED 2-CHANNEL ARRANGEMENT |
| SE7709026A SE7709026L (en) | 1976-08-10 | 1977-08-09 | TWO-CHANNEL CHARGING COUPLING DEVICE |
| FR7724610A FR2361748A1 (en) | 1976-08-10 | 1977-08-10 | Charge coupled two-channel device - has fixed charge applied to common input electrode, and split between channels in two complementary parts (NL 14.2.78) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA258,768A CA1076700A (en) | 1976-08-10 | 1976-08-10 | Complementary input structure for charge coupled device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1076700A true CA1076700A (en) | 1980-04-29 |
Family
ID=4106620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA258,768A Expired CA1076700A (en) | 1976-08-10 | 1976-08-10 | Complementary input structure for charge coupled device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5320871A (en) |
| CA (1) | CA1076700A (en) |
| DE (1) | DE2734366A1 (en) |
| FR (1) | FR2361748A1 (en) |
| NL (1) | NL7706624A (en) |
| SE (1) | SE7709026L (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2936731A1 (en) * | 1979-09-11 | 1981-04-02 | Siemens AG, 1000 Berlin und 8000 München | INTEGRATED CIRCUIT WITH TWO CTD ARRANGEMENTS |
| NL8501702A (en) * | 1985-06-13 | 1987-01-02 | Philips Nv | LOAD-COUPLED DEVICE. |
| JPH01240437A (en) * | 1988-03-08 | 1989-09-26 | Toyo Kogei Kogyo:Kk | Vessel for retort foodstuffs and its producing method |
-
1976
- 1976-08-10 CA CA258,768A patent/CA1076700A/en not_active Expired
-
1977
- 1977-06-16 NL NL7706624A patent/NL7706624A/en not_active Application Discontinuation
- 1977-07-14 JP JP8364377A patent/JPS5320871A/en active Granted
- 1977-07-29 DE DE19772734366 patent/DE2734366A1/en active Pending
- 1977-08-09 SE SE7709026A patent/SE7709026L/en unknown
- 1977-08-10 FR FR7724610A patent/FR2361748A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5320871A (en) | 1978-02-25 |
| DE2734366A1 (en) | 1978-02-16 |
| SE7709026L (en) | 1978-02-11 |
| JPS6238868B2 (en) | 1987-08-20 |
| FR2361748A1 (en) | 1978-03-10 |
| NL7706624A (en) | 1978-02-14 |
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