CA1074009A - Memoire a dispositif a transfert de charge - Google Patents
Memoire a dispositif a transfert de chargeInfo
- Publication number
- CA1074009A CA1074009A CA246,199A CA246199A CA1074009A CA 1074009 A CA1074009 A CA 1074009A CA 246199 A CA246199 A CA 246199A CA 1074009 A CA1074009 A CA 1074009A
- Authority
- CA
- Canada
- Prior art keywords
- cell
- storage
- cells
- semiconductor
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 title claims abstract description 31
- 238000003860 storage Methods 0.000 claims abstract description 104
- 238000012546 transfer Methods 0.000 claims abstract description 87
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000004020 conductor Substances 0.000 claims abstract description 59
- 239000011159 matrix material Substances 0.000 claims abstract description 29
- 239000012212 insulator Substances 0.000 claims abstract description 26
- 239000002019 doping agent Substances 0.000 claims abstract description 4
- 230000004044 response Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 238000009825 accumulation Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000005468 ion implantation Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 114
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 229920005591 polysilicon Polymers 0.000 description 13
- 230000035508 accumulation Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005036 potential barrier Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RZHBRWSVUJWTRD-UHFFFAOYSA-N 6-(2,4-dichlorophenyl)-2,3,4-trihydroxyhexane-1-sulfonic acid Chemical compound OS(=O)(=O)CC(O)C(O)C(O)CCC1=CC=C(Cl)C=C1Cl RZHBRWSVUJWTRD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010351 charge transfer process Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229940000425 combination drug Drugs 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55488975A | 1975-03-03 | 1975-03-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1074009A true CA1074009A (fr) | 1980-03-18 |
Family
ID=24215119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA246,199A Expired CA1074009A (fr) | 1975-03-03 | 1976-02-20 | Memoire a dispositif a transfert de charge |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS51112138A (fr) |
| CA (1) | CA1074009A (fr) |
| DE (1) | DE2608731A1 (fr) |
| FR (1) | FR2303345A1 (fr) |
| GB (1) | GB1542288A (fr) |
| IT (1) | IT1057288B (fr) |
| NL (1) | NL7602155A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2060997A (en) * | 1978-01-03 | 1981-05-07 | Erb D M | Stratified charge memory divide |
| JPS5793542A (en) * | 1980-12-03 | 1982-06-10 | Hitachi Ltd | Semiconductor integrated circuit device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2243988C3 (de) * | 1972-09-07 | 1980-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Hableiteranordnung mit mindestens einem MIS-Kondensator |
-
1976
- 1976-02-20 CA CA246,199A patent/CA1074009A/fr not_active Expired
- 1976-02-26 GB GB767629A patent/GB1542288A/en not_active Expired
- 1976-03-02 NL NL7602155A patent/NL7602155A/xx not_active Application Discontinuation
- 1976-03-02 IT IT7648376A patent/IT1057288B/it active
- 1976-03-03 JP JP51023028A patent/JPS51112138A/ja active Pending
- 1976-03-03 FR FR7605962A patent/FR2303345A1/fr active Pending
- 1976-03-03 DE DE19762608731 patent/DE2608731A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE2608731A1 (de) | 1976-09-16 |
| NL7602155A (nl) | 1976-09-07 |
| GB1542288A (en) | 1979-03-14 |
| JPS51112138A (en) | 1976-10-04 |
| IT1057288B (it) | 1982-03-10 |
| FR2303345A1 (fr) | 1976-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |