CA1023834A - Laser device having enclosed laser cavity - Google Patents
Laser device having enclosed laser cavityInfo
- Publication number
- CA1023834A CA1023834A CA195,118A CA195118A CA1023834A CA 1023834 A CA1023834 A CA 1023834A CA 195118 A CA195118 A CA 195118A CA 1023834 A CA1023834 A CA 1023834A
- Authority
- CA
- Canada
- Prior art keywords
- laser
- enclosed
- cavity
- laser device
- laser cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US350575A US3893044A (en) | 1973-04-12 | 1973-04-12 | Laser device having enclosed laser cavity |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1023834A true CA1023834A (en) | 1978-01-03 |
Family
ID=23377317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA195,118A Expired CA1023834A (en) | 1973-04-12 | 1974-03-15 | Laser device having enclosed laser cavity |
Country Status (7)
Country | Link |
---|---|
US (1) | US3893044A (de) |
JP (1) | JPS5238393B2 (de) |
CA (1) | CA1023834A (de) |
DE (1) | DE2416147C2 (de) |
FR (1) | FR2225855B1 (de) |
GB (1) | GB1461172A (de) |
IT (1) | IT1010745B (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4121177A (en) * | 1973-05-28 | 1978-10-17 | Hitachi, Ltd. | Semiconductor device and a method of fabricating the same |
US4213805A (en) * | 1973-05-28 | 1980-07-22 | Hitachi, Ltd. | Liquid phase epitaxy method of forming a filimentary laser device |
JPS5235999B2 (de) * | 1974-08-26 | 1977-09-12 | ||
GB1487479A (en) * | 1974-10-09 | 1977-09-28 | Rca Corp | Semi-conductor injection laser with confined recombination region |
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
FR2299730A1 (fr) * | 1975-01-31 | 1976-08-27 | Thomson Csf | Diodes electroluminescentes et leur procede de fabrication |
GB1494518A (en) * | 1975-02-04 | 1977-12-07 | Standard Telephones Cables Ltd | Heterostructure lasers |
US4033796A (en) * | 1975-06-23 | 1977-07-05 | Xerox Corporation | Method of making buried-heterostructure diode injection laser |
US4077817A (en) * | 1975-12-31 | 1978-03-07 | Texas Instruments Incorporated | Making a semiconductor laser structure by liquid phase epitaxy |
US4138274A (en) * | 1976-06-09 | 1979-02-06 | Northern Telecom Limited | Method of producing optoelectronic devices with control of light propagation by proton bombardment |
NL7609607A (nl) * | 1976-08-30 | 1978-03-02 | Philips Nv | Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze. |
US4300107A (en) * | 1979-07-18 | 1981-11-10 | Bell Telephone Laboratories, Incorporated | Trap doped laser combined with photodetector |
US4305048A (en) * | 1979-10-29 | 1981-12-08 | Bell Telephone Laboratories, Incorporated | Mode stabilized semiconductor laser |
JPS61210679A (ja) * | 1985-03-15 | 1986-09-18 | Sony Corp | 半導体装置 |
FR2647966B1 (fr) * | 1989-06-02 | 1991-08-16 | Thomson Hybrides | Laser semiconducteur a localisation de courant |
US5091799A (en) * | 1990-10-31 | 1992-02-25 | The United States Of America As Represented By The Secretary Of The Navy | Buried heterostructure laser modulator |
JP3358770B2 (ja) * | 1995-07-10 | 2002-12-24 | 科学技術振興事業団 | 光制御物質及び光制御方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1439316C3 (de) * | 1963-12-13 | 1975-07-31 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Anordnung zur Erzeugung und/oder Verstärkung elektromagnetischer Strahlung |
US3537029A (en) * | 1968-06-10 | 1970-10-27 | Rca Corp | Semiconductor laser producing light at two wavelengths simultaneously |
JPS5141318B1 (de) * | 1969-04-01 | 1976-11-09 | ||
US3758875A (en) * | 1970-05-01 | 1973-09-11 | Bell Telephone Labor Inc | Double heterostructure junction lasers |
GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
DE2137892C3 (de) * | 1971-07-29 | 1978-05-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterlaser |
-
1973
- 1973-04-12 US US350575A patent/US3893044A/en not_active Expired - Lifetime
-
1974
- 1974-02-28 FR FR7407861A patent/FR2225855B1/fr not_active Expired
- 1974-03-14 JP JP49028695A patent/JPS5238393B2/ja not_active Expired
- 1974-03-15 CA CA195,118A patent/CA1023834A/en not_active Expired
- 1974-03-19 GB GB1205674A patent/GB1461172A/en not_active Expired
- 1974-04-03 DE DE2416147A patent/DE2416147C2/de not_active Expired
- 1974-04-05 IT IT12718/74A patent/IT1010745B/it active
Also Published As
Publication number | Publication date |
---|---|
DE2416147C2 (de) | 1983-08-25 |
GB1461172A (en) | 1977-01-13 |
JPS49131687A (de) | 1974-12-17 |
DE2416147A1 (de) | 1974-10-24 |
FR2225855B1 (de) | 1979-07-06 |
US3893044A (en) | 1975-07-01 |
FR2225855A1 (de) | 1974-11-08 |
IT1010745B (it) | 1977-01-20 |
JPS5238393B2 (de) | 1977-09-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |
Effective date: 19950103 |