BRPI0912376A2 - dissipação de calor lateral de circuito integrado 3-d - Google Patents
dissipação de calor lateral de circuito integrado 3-dInfo
- Publication number
- BRPI0912376A2 BRPI0912376A2 BRPI0912376A BRPI0912376A BRPI0912376A2 BR PI0912376 A2 BRPI0912376 A2 BR PI0912376A2 BR PI0912376 A BRPI0912376 A BR PI0912376A BR PI0912376 A BRPI0912376 A BR PI0912376A BR PI0912376 A2 BRPI0912376 A2 BR PI0912376A2
- Authority
- BR
- Brazil
- Prior art keywords
- integrated circuit
- heat dissipation
- side heat
- circuit side
- dissipation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06589—Thermal management, e.g. cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/115,076 US8502373B2 (en) | 2008-05-05 | 2008-05-05 | 3-D integrated circuit lateral heat dissipation |
| PCT/US2009/041780 WO2009137286A1 (en) | 2008-05-05 | 2009-04-27 | 3-d integrated circuit lateral heat dissipation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0912376A2 true BRPI0912376A2 (pt) | 2018-02-27 |
Family
ID=40941689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0912376A BRPI0912376A2 (pt) | 2008-05-05 | 2009-04-27 | dissipação de calor lateral de circuito integrado 3-d |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US8502373B2 (pt) |
| EP (1) | EP2286452A1 (pt) |
| JP (3) | JP2011520286A (pt) |
| KR (1) | KR101255675B1 (pt) |
| CN (2) | CN102017139B (pt) |
| BR (1) | BRPI0912376A2 (pt) |
| CA (1) | CA2720966C (pt) |
| MX (1) | MX2010011848A (pt) |
| RU (2) | RU2459315C1 (pt) |
| TW (1) | TWI496269B (pt) |
| WO (1) | WO2009137286A1 (pt) |
Families Citing this family (23)
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| US8232137B2 (en) * | 2009-12-10 | 2012-07-31 | Intersil Americas Inc. | Heat conduction for chip stacks and 3-D circuits |
| KR20110088234A (ko) * | 2010-01-28 | 2011-08-03 | 삼성전자주식회사 | 적층 반도체 패키지의 제조 방법 |
| US8405203B2 (en) | 2010-09-10 | 2013-03-26 | Cisco Technology, Inc. | Semiconductor package with integrated substrate thermal slug |
| US8193039B2 (en) * | 2010-09-24 | 2012-06-05 | Advanced Micro Devices, Inc. | Semiconductor chip with reinforcing through-silicon-vias |
| US9704793B2 (en) | 2011-01-04 | 2017-07-11 | Napra Co., Ltd. | Substrate for electronic device and electronic device |
| JP5250707B2 (ja) * | 2011-05-26 | 2013-07-31 | 有限会社 ナプラ | 電子機器用基板及び電子機器 |
| US8367478B2 (en) | 2011-06-02 | 2013-02-05 | International Business Machines Corporation | Method and system for internal layer-layer thermal enhancement |
| US8531032B2 (en) | 2011-09-02 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermally enhanced structure for multi-chip device |
| FR2999017A1 (fr) * | 2012-12-03 | 2014-06-06 | St Microelectronics Sa | Structure integree tridimensionnelle a dissipation thermique amelioree |
| TWI509758B (zh) | 2012-12-26 | 2015-11-21 | Univ Nat Chiao Tung | 三維積體電路 |
| US10403601B2 (en) * | 2016-06-17 | 2019-09-03 | Fairchild Semiconductor Corporation | Semiconductor package and related methods |
| US10256188B2 (en) | 2016-11-26 | 2019-04-09 | Texas Instruments Incorporated | Interconnect via with grown graphitic material |
| US10811334B2 (en) | 2016-11-26 | 2020-10-20 | Texas Instruments Incorporated | Integrated circuit nanoparticle thermal routing structure in interconnect region |
| US10861763B2 (en) | 2016-11-26 | 2020-12-08 | Texas Instruments Incorporated | Thermal routing trench by additive processing |
| US11676880B2 (en) | 2016-11-26 | 2023-06-13 | Texas Instruments Incorporated | High thermal conductivity vias by additive processing |
| US10529641B2 (en) * | 2016-11-26 | 2020-01-07 | Texas Instruments Incorporated | Integrated circuit nanoparticle thermal routing structure over interconnect region |
| US11004680B2 (en) | 2016-11-26 | 2021-05-11 | Texas Instruments Incorporated | Semiconductor device package thermal conduit |
| US11276667B2 (en) | 2016-12-31 | 2022-03-15 | Intel Corporation | Heat removal between top and bottom die interface |
| US10163864B1 (en) * | 2017-08-16 | 2018-12-25 | Globalfoundries Inc. | Vertically stacked wafers and methods of forming same |
| US10566313B1 (en) | 2018-08-21 | 2020-02-18 | International Business Machines Corporation | Integrated circuit chip carrier with in-plane thermal conductance layer |
| US10643957B2 (en) | 2018-08-27 | 2020-05-05 | Nxp B.V. | Conformal dummy die |
| US10854530B1 (en) * | 2019-07-31 | 2020-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Heat dissipation structures |
| CN114334854A (zh) | 2020-09-30 | 2022-04-12 | 华为技术有限公司 | 芯片及其制造方法、电子设备 |
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| JPS62194652A (ja) * | 1986-02-21 | 1987-08-27 | Hitachi Ltd | 半導体装置 |
| US4731701A (en) * | 1987-05-12 | 1988-03-15 | Fairchild Semiconductor Corporation | Integrated circuit package with thermal path layers incorporating staggered thermal vias |
| JPS63293931A (ja) * | 1987-05-27 | 1988-11-30 | Hitachi Ltd | 半導体装置およびその製造方法 |
| US5050039A (en) * | 1990-06-26 | 1991-09-17 | Digital Equipment Corporation | Multiple circuit chip mounting and cooling arrangement |
| US5414299A (en) * | 1993-09-24 | 1995-05-09 | Vlsi Technology, Inc. | Semi-conductor device interconnect package assembly for improved package performance |
| DE59510807D1 (de) * | 1994-07-05 | 2003-11-20 | Infineon Technologies Ag | Verfahren zur herstellung einer dreidimensionalen schaltungsanordnung |
| US5532512A (en) * | 1994-10-03 | 1996-07-02 | General Electric Company | Direct stacked and flip chip power semiconductor device structures |
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| US20020089016A1 (en) * | 1998-07-10 | 2002-07-11 | Jean-Pierre Joly | Thin layer semi-conductor structure comprising a heat distribution layer |
| JP2000040382A (ja) | 1998-07-23 | 2000-02-08 | Sony Corp | 不揮発性半導体記憶装置およびそのデータ書き込み方法 |
| US6573538B2 (en) * | 1998-11-12 | 2003-06-03 | International Business Machines Corporation | Semiconductor device with internal heat dissipation |
| KR20000011896U (ko) * | 1998-12-10 | 2000-07-05 | 윤종용 | 반도체 디바이스의 방열을 위한 히트 싱크 구조 |
| TW413874B (en) * | 1999-04-12 | 2000-12-01 | Siliconware Precision Industries Co Ltd | BGA semiconductor package having exposed heat dissipation layer and its manufacturing method |
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| JP3570672B2 (ja) | 1999-11-04 | 2004-09-29 | ローム株式会社 | 半導体装置 |
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| US8497587B2 (en) * | 2009-12-30 | 2013-07-30 | Stmicroelectronics Pte Ltd. | Thermally enhanced expanded wafer level package ball grid array structure and method of making the same |
-
2008
- 2008-05-05 US US12/115,076 patent/US8502373B2/en active Active
-
2009
- 2009-04-27 EP EP09743273A patent/EP2286452A1/en not_active Withdrawn
- 2009-04-27 CN CN2009801152899A patent/CN102017139B/zh active Active
- 2009-04-27 RU RU2010149596/28A patent/RU2459315C1/ru active
- 2009-04-27 KR KR1020107027421A patent/KR101255675B1/ko active IP Right Grant
- 2009-04-27 RU RU2012118036/28A patent/RU2502154C1/ru active
- 2009-04-27 WO PCT/US2009/041780 patent/WO2009137286A1/en active Application Filing
- 2009-04-27 CN CN201310119417.5A patent/CN103219328B/zh active Active
- 2009-04-27 JP JP2011508547A patent/JP2011520286A/ja active Pending
- 2009-04-27 BR BRPI0912376A patent/BRPI0912376A2/pt not_active Application Discontinuation
- 2009-04-27 MX MX2010011848A patent/MX2010011848A/es active IP Right Grant
- 2009-04-27 CA CA2720966A patent/CA2720966C/en active Active
- 2009-05-05 TW TW098114847A patent/TWI496269B/zh active
-
2012
- 2012-12-26 JP JP2012283703A patent/JP5788379B2/ja active Active
-
2015
- 2015-05-27 JP JP2015107780A patent/JP2015167259A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN103219328A (zh) | 2013-07-24 |
| TWI496269B (zh) | 2015-08-11 |
| JP2013077837A (ja) | 2013-04-25 |
| JP2015167259A (ja) | 2015-09-24 |
| CA2720966C (en) | 2015-06-30 |
| US8502373B2 (en) | 2013-08-06 |
| CA2720966A1 (en) | 2009-11-12 |
| RU2012118036A (ru) | 2013-11-10 |
| KR20110004475A (ko) | 2011-01-13 |
| JP5788379B2 (ja) | 2015-09-30 |
| RU2502154C1 (ru) | 2013-12-20 |
| CN102017139A (zh) | 2011-04-13 |
| WO2009137286A1 (en) | 2009-11-12 |
| KR101255675B1 (ko) | 2013-04-17 |
| EP2286452A1 (en) | 2011-02-23 |
| JP2011520286A (ja) | 2011-07-14 |
| RU2459315C1 (ru) | 2012-08-20 |
| US20090273068A1 (en) | 2009-11-05 |
| MX2010011848A (es) | 2010-11-30 |
| TW201005917A (en) | 2010-02-01 |
| CN102017139B (zh) | 2013-05-08 |
| RU2010149596A (ru) | 2012-06-20 |
| CN103219328B (zh) | 2017-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
| B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
| B09B | Patent application refused [chapter 9.2 patent gazette] | ||
| B09B | Patent application refused [chapter 9.2 patent gazette] |
Free format text: MANTIDO O INDEFERIMENTO UMA VEZ QUE NAO FOI APRESENTADO RECURSO DENTRO DO PRAZO LEGAL |