BR7201747D0 - Um dispositivo formador de imagem em estado solido - Google Patents

Um dispositivo formador de imagem em estado solido

Info

Publication number
BR7201747D0
BR7201747D0 BR721747A BR174772A BR7201747D0 BR 7201747 D0 BR7201747 D0 BR 7201747D0 BR 721747 A BR721747 A BR 721747A BR 174772 A BR174772 A BR 174772A BR 7201747 D0 BR7201747 D0 BR 7201747D0
Authority
BR
Brazil
Prior art keywords
image
solid state
formating
formating device
solid
Prior art date
Application number
BR721747A
Other languages
English (en)
Inventor
J Shannon
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BR7201747D0 publication Critical patent/BR7201747D0/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124—Devices with PN homojunction gate
    • H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
BR721747A 1971-03-24 1972-03-24 Um dispositivo formador de imagem em estado solido BR7201747D0 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12759671A 1971-03-24 1971-03-24

Publications (1)

Publication Number Publication Date
BR7201747D0 true BR7201747D0 (pt) 1973-06-07

Family

ID=22430924

Family Applications (1)

Application Number Title Priority Date Filing Date
BR721747A BR7201747D0 (pt) 1971-03-24 1972-03-24 Um dispositivo formador de imagem em estado solido

Country Status (15)

Country Link
US (1) US3721839A (pt)
JP (1) JPS5318127B1 (pt)
AT (1) AT330264B (pt)
AU (1) AU463449B2 (pt)
BE (1) BE781164A (pt)
BR (1) BR7201747D0 (pt)
CA (1) CA951005A (pt)
CH (1) CH549321A (pt)
DE (1) DE2213765C3 (pt)
ES (1) ES401057A1 (pt)
FR (1) FR2130669B1 (pt)
GB (1) GB1391934A (pt)
IT (1) IT954512B (pt)
NL (1) NL7203662A (pt)
SE (1) SE377223B (pt)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3786263A (en) * 1972-06-21 1974-01-15 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices
DE2345679A1 (de) * 1972-09-22 1974-04-04 Philips Nv Halbleiterkaltkathode
DE2345686A1 (de) * 1972-09-22 1974-04-04 Philips Nv Bildwiedergabe- und/oder -umwandlungsvorrichtung
NL7212912A (pt) * 1972-09-23 1974-03-26
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
US3919569A (en) * 1972-12-29 1975-11-11 Ibm Dynamic two device memory cell which provides D.C. sense signals
US3801820A (en) * 1973-02-09 1974-04-02 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
US3795806A (en) * 1973-03-02 1974-03-05 Gen Electric Method and apparatus for sensing radiation and providing electrical readout
NL7308240A (pt) * 1973-06-14 1974-12-17
GB1444951A (en) * 1973-06-18 1976-08-04 Mullard Ltd Electronic solid state devices
DE2404237C3 (de) * 1974-01-30 1980-04-17 Deutsche Itt Industries Gmbh, 7800 Freiburg Integriertes Halbleiterbauelement zum zellenförmigen Abtasten eines Bildes
US3919555A (en) * 1974-10-17 1975-11-11 Philips Corp Direct view infra-red to visible light converter
US4107724A (en) * 1974-12-17 1978-08-15 U.S. Philips Corporation Surface controlled field effect solid state device
US3988619A (en) * 1974-12-27 1976-10-26 International Business Machines Corporation Random access solid-state image sensor with non-destructive read-out
JPS5466080A (en) * 1977-11-05 1979-05-28 Nippon Gakki Seizo Kk Semiconductor device
US4237473A (en) * 1978-12-22 1980-12-02 Honeywell Inc. Gallium phosphide JFET
JPS58220574A (ja) * 1982-06-17 1983-12-22 Olympus Optical Co Ltd 固体撮像装置
JPS59107578A (ja) * 1982-12-11 1984-06-21 Junichi Nishizawa 半導体光電変換装置
JPS59108464A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JPS6030282A (ja) * 1983-07-28 1985-02-15 Mitsubishi Electric Corp 固体撮像装置
JPH02146876A (ja) * 1988-11-29 1990-06-06 Toshiba Corp 光センサの駆動方法
US7009647B1 (en) * 2000-04-24 2006-03-07 Ess Technology, Inc. CMOS imager having a JFET adapted to detect photons and produce an amplified electrical signal
JP4109858B2 (ja) * 2001-11-13 2008-07-02 株式会社東芝 固体撮像装置
US7592841B2 (en) 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
US7525163B2 (en) 2006-10-31 2009-04-28 Dsm Solutions, Inc. Semiconductor device, design method and structure
US20080265936A1 (en) * 2007-04-27 2008-10-30 Dsm Solutions, Inc. Integrated circuit switching device, structure and method of manufacture
US7629812B2 (en) 2007-08-03 2009-12-08 Dsm Solutions, Inc. Switching circuits and methods for programmable logic devices
TWI587699B (zh) * 2015-06-02 2017-06-11 國立中山大學 感光電路及其控制方法
JP6567792B1 (ja) * 2019-04-04 2019-08-28 キヤノン電子管デバイス株式会社 放射線検出器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3051840A (en) * 1959-12-18 1962-08-28 Ibm Photosensitive field effect unit
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3390273A (en) * 1966-08-08 1968-06-25 Fairchild Camera Instr Co Electronic shutter with gating and storage features
US3453507A (en) * 1967-04-04 1969-07-01 Honeywell Inc Photo-detector
US3617823A (en) * 1969-03-07 1971-11-02 Rca Corp Self-scanned phototransistor array employing common substrate

Also Published As

Publication number Publication date
BE781164A (fr) 1972-09-25
SE377223B (pt) 1975-06-23
GB1391934A (en) 1975-04-23
NL7203662A (pt) 1972-09-26
CA951005A (en) 1974-07-09
US3721839A (en) 1973-03-20
FR2130669A1 (pt) 1972-11-03
ATA250872A (de) 1975-09-15
AU463449B2 (en) 1975-07-09
AT330264B (de) 1976-06-25
FR2130669B1 (pt) 1977-08-19
JPS5318127B1 (pt) 1978-06-13
DE2213765B2 (de) 1979-02-08
DE2213765C3 (de) 1979-10-04
AU4025372A (en) 1973-09-27
CH549321A (de) 1974-05-15
DE2213765A1 (de) 1972-09-28
IT954512B (it) 1973-09-15
ES401057A1 (es) 1975-02-16

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