BR112015010277A2 - detector de radiação; e método para fabricar um detector de radiação - Google Patents
detector de radiação; e método para fabricar um detector de radiaçãoInfo
- Publication number
- BR112015010277A2 BR112015010277A2 BR112015010277A BR112015010277A BR112015010277A2 BR 112015010277 A2 BR112015010277 A2 BR 112015010277A2 BR 112015010277 A BR112015010277 A BR 112015010277A BR 112015010277 A BR112015010277 A BR 112015010277A BR 112015010277 A2 BR112015010277 A2 BR 112015010277A2
- Authority
- BR
- Brazil
- Prior art keywords
- radiation detector
- fabricating
- radiation
- direct conversion
- conversion semiconductor
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
resumo detector de radiação; e método para fabricar um detector de radiação a presente invenção refere-se à detecção de radiação com uma camada semicondutora de conversão direta para converter uma radiação incidente em sinais elétricos. a irradiação de infravermelho (iv) de sub-banda reduz consideravelmente a polarização no material semicondutor de conversão direta quando ele é irradiado, de modo que a contagem é possível em correntes de tubo mais altas sem qualquer desvio do nível de base. um dispositivo de irradiação iv é integrado no circuito de leitura ao qual o cristal é conectado por flip-chip para permitir cristais com 4 lados de junção.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261724317P | 2012-11-09 | 2012-11-09 | |
PCT/IB2013/059990 WO2014072939A1 (en) | 2012-11-09 | 2013-11-08 | Sub-band infra-red irradiation for detector crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112015010277A2 true BR112015010277A2 (pt) | 2017-07-11 |
Family
ID=49713431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112015010277A BR112015010277A2 (pt) | 2012-11-09 | 2013-11-08 | detector de radiação; e método para fabricar um detector de radiação |
Country Status (7)
Country | Link |
---|---|
US (1) | US9664558B2 (pt) |
EP (1) | EP2917766B1 (pt) |
JP (1) | JP6310471B2 (pt) |
CN (1) | CN104781695B (pt) |
BR (1) | BR112015010277A2 (pt) |
RU (1) | RU2015121968A (pt) |
WO (1) | WO2014072939A1 (pt) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105765406B (zh) | 2014-09-26 | 2018-01-05 | 皇家飞利浦有限公司 | 具有加热设备的辐射探测器 |
US9571765B2 (en) | 2015-06-25 | 2017-02-14 | General Electric Company | Universal four-side buttable digital CMOS imager |
RU2712934C2 (ru) | 2015-07-09 | 2020-02-03 | Конинклейке Филипс Н.В. | Детектор излучения прямого преобразования |
CN108139494B (zh) | 2015-10-20 | 2022-07-26 | 皇家飞利浦有限公司 | 用于直接转换x射线检测器的极化校正 |
DE102015220793A1 (de) * | 2015-10-23 | 2017-04-27 | Siemens Healthcare Gmbh | Röntgendetektor und/oder Gammadetektor mit Lichtbias |
US9588240B1 (en) | 2015-10-27 | 2017-03-07 | General Electric Company | Digital readout architecture for four side buttable digital X-ray detector |
US10686003B2 (en) | 2015-12-31 | 2020-06-16 | General Electric Company | Radiation detector assembly |
US10283557B2 (en) | 2015-12-31 | 2019-05-07 | General Electric Company | Radiation detector assembly |
DE102016210935B4 (de) * | 2016-06-20 | 2020-07-09 | Siemens Healthcare Gmbh | Röntgendetektor mit intransparenter Zwischenschicht |
CN109690355B (zh) * | 2016-09-23 | 2022-10-21 | 深圳帧观德芯科技有限公司 | 具有多层半导体x射线检测器的*** |
EP3422051A1 (en) | 2017-06-28 | 2019-01-02 | Koninklijke Philips N.V. | Direct conversion radiation detection |
WO2020010593A1 (en) * | 2018-07-12 | 2020-01-16 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making a radiation detector |
EP3605151A1 (en) * | 2018-08-01 | 2020-02-05 | Koninklijke Philips N.V. | Photon counting detector |
DE102018219061A1 (de) * | 2018-10-25 | 2020-04-30 | Redlen Technologies, Inc. | Röntgen-zu-infrarot-umwandlungsstrukturen zum beleuchten von röntgendetektoren mit infrarotlicht für verbesserte leistung |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61223689A (ja) * | 1985-03-29 | 1986-10-04 | Shimadzu Corp | 半導体放射線位置検出装置 |
JP2564979B2 (ja) * | 1990-09-26 | 1996-12-18 | 株式会社島津製作所 | 放射線検出器 |
US5677539A (en) | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
DE19616545B4 (de) | 1996-04-25 | 2006-05-11 | Siemens Ag | Schneller Strahlungsdetektor |
EP0848885B1 (en) * | 1996-07-08 | 2004-10-06 | Koninklijke Philips Electronics N.V. | X-ray examination apparatus with a semiconductor x-ray detector |
US6373064B1 (en) * | 1998-10-02 | 2002-04-16 | Sandia Corporation | Semiconductor radiation spectrometer |
DE10132924A1 (de) * | 2001-07-06 | 2003-01-16 | Philips Corp Intellectual Pty | Flacher dynamischer Strahlungsdetektor |
JP4211435B2 (ja) | 2002-08-30 | 2009-01-21 | 株式会社島津製作所 | 放射線検出器 |
US7223981B1 (en) | 2002-12-04 | 2007-05-29 | Aguila Technologies Inc. | Gamma ray detector modules |
EP1583985B1 (en) * | 2003-01-06 | 2017-02-22 | Koninklijke Philips N.V. | Radiation detector with shielded electronics for computed tomography |
US7196334B2 (en) | 2003-04-24 | 2007-03-27 | Koninklijke Philips Electronics N.V. | X-ray detector element |
JP2005024368A (ja) * | 2003-07-01 | 2005-01-27 | Fuji Photo Film Co Ltd | 放射線画像検出器の残像消去方法および装置 |
DE102005037898B3 (de) * | 2005-08-10 | 2007-04-12 | Siemens Ag | Festkörperdetektor bzw. Verfahren zur Rücksetzung von Restladungen durch Beleuchtung bei einem Festkörperdetektor |
US7652258B2 (en) * | 2007-01-08 | 2010-01-26 | Orbotech Medical Solutions Ltd. | Method, apparatus, and system of reducing polarization in radiation detectors |
EP2088451B1 (en) * | 2008-02-05 | 2016-01-06 | PANalytical B.V. | Imaging detector |
US20100078558A1 (en) * | 2008-09-26 | 2010-04-01 | Michael Prokesch | Infra-red light stimulated cdZnTe spectroscopic semiconductor x-ray and gamma-ray radiation detector |
DE102010015422B4 (de) * | 2010-04-19 | 2013-04-18 | Siemens Aktiengesellschaft | Röntgendetektor mit einer direkt konvertierenden Halbleiterschicht und Kalibrierverfahren für einen solchen Röntgendetektor |
KR101761817B1 (ko) * | 2011-03-04 | 2017-07-26 | 삼성전자주식회사 | 대면적 엑스선 검출기 |
CN103562746B (zh) * | 2011-05-11 | 2018-08-07 | 皇家飞利浦有限公司 | 电离辐射探测 |
DE102012213404B3 (de) * | 2012-07-31 | 2014-01-23 | Siemens Aktiengesellschaft | Verfahren zur Temperaturstabilisierung, Röntgenstrahlungsdetektor und CT-System |
-
2013
- 2013-11-08 JP JP2015541280A patent/JP6310471B2/ja active Active
- 2013-11-08 BR BR112015010277A patent/BR112015010277A2/pt not_active IP Right Cessation
- 2013-11-08 CN CN201380058602.6A patent/CN104781695B/zh active Active
- 2013-11-08 EP EP13799686.4A patent/EP2917766B1/en active Active
- 2013-11-08 US US14/440,609 patent/US9664558B2/en active Active
- 2013-11-08 WO PCT/IB2013/059990 patent/WO2014072939A1/en active Application Filing
- 2013-11-08 RU RU2015121968A patent/RU2015121968A/ru not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
RU2015121968A (ru) | 2017-01-10 |
JP2016504567A (ja) | 2016-02-12 |
WO2014072939A1 (en) | 2014-05-15 |
CN104781695B (zh) | 2019-06-28 |
JP6310471B2 (ja) | 2018-04-11 |
US20150285676A1 (en) | 2015-10-08 |
EP2917766A1 (en) | 2015-09-16 |
EP2917766B1 (en) | 2019-11-06 |
US9664558B2 (en) | 2017-05-30 |
CN104781695A (zh) | 2015-07-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 5A ANUIDADE. |
|
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2487 DE 04-09-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |