BR112015010277A2 - detector de radiação; e método para fabricar um detector de radiação - Google Patents

detector de radiação; e método para fabricar um detector de radiação

Info

Publication number
BR112015010277A2
BR112015010277A2 BR112015010277A BR112015010277A BR112015010277A2 BR 112015010277 A2 BR112015010277 A2 BR 112015010277A2 BR 112015010277 A BR112015010277 A BR 112015010277A BR 112015010277 A BR112015010277 A BR 112015010277A BR 112015010277 A2 BR112015010277 A2 BR 112015010277A2
Authority
BR
Brazil
Prior art keywords
radiation detector
fabricating
radiation
direct conversion
conversion semiconductor
Prior art date
Application number
BR112015010277A
Other languages
English (en)
Inventor
Herrmann Christoph
Steadman Booker Roger
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of BR112015010277A2 publication Critical patent/BR112015010277A2/pt

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Molecular Biology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

resumo detector de radiação; e método para fabricar um detector de radiação a presente invenção refere-se à detecção de radiação com uma camada semicondutora de conversão direta para converter uma radiação incidente em sinais elétricos. a irradiação de infravermelho (iv) de sub-banda reduz consideravelmente a polarização no material semicondutor de conversão direta quando ele é irradiado, de modo que a contagem é possível em correntes de tubo mais altas sem qualquer desvio do nível de base. um dispositivo de irradiação iv é integrado no circuito de leitura ao qual o cristal é conectado por flip-chip para permitir cristais com 4 lados de junção.
BR112015010277A 2012-11-09 2013-11-08 detector de radiação; e método para fabricar um detector de radiação BR112015010277A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261724317P 2012-11-09 2012-11-09
PCT/IB2013/059990 WO2014072939A1 (en) 2012-11-09 2013-11-08 Sub-band infra-red irradiation for detector crystals

Publications (1)

Publication Number Publication Date
BR112015010277A2 true BR112015010277A2 (pt) 2017-07-11

Family

ID=49713431

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112015010277A BR112015010277A2 (pt) 2012-11-09 2013-11-08 detector de radiação; e método para fabricar um detector de radiação

Country Status (7)

Country Link
US (1) US9664558B2 (pt)
EP (1) EP2917766B1 (pt)
JP (1) JP6310471B2 (pt)
CN (1) CN104781695B (pt)
BR (1) BR112015010277A2 (pt)
RU (1) RU2015121968A (pt)
WO (1) WO2014072939A1 (pt)

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CN105765406B (zh) 2014-09-26 2018-01-05 皇家飞利浦有限公司 具有加热设备的辐射探测器
US9571765B2 (en) 2015-06-25 2017-02-14 General Electric Company Universal four-side buttable digital CMOS imager
RU2712934C2 (ru) 2015-07-09 2020-02-03 Конинклейке Филипс Н.В. Детектор излучения прямого преобразования
CN108139494B (zh) 2015-10-20 2022-07-26 皇家飞利浦有限公司 用于直接转换x射线检测器的极化校正
DE102015220793A1 (de) * 2015-10-23 2017-04-27 Siemens Healthcare Gmbh Röntgendetektor und/oder Gammadetektor mit Lichtbias
US9588240B1 (en) 2015-10-27 2017-03-07 General Electric Company Digital readout architecture for four side buttable digital X-ray detector
US10686003B2 (en) 2015-12-31 2020-06-16 General Electric Company Radiation detector assembly
US10283557B2 (en) 2015-12-31 2019-05-07 General Electric Company Radiation detector assembly
DE102016210935B4 (de) * 2016-06-20 2020-07-09 Siemens Healthcare Gmbh Röntgendetektor mit intransparenter Zwischenschicht
CN109690355B (zh) * 2016-09-23 2022-10-21 深圳帧观德芯科技有限公司 具有多层半导体x射线检测器的***
EP3422051A1 (en) 2017-06-28 2019-01-02 Koninklijke Philips N.V. Direct conversion radiation detection
WO2020010593A1 (en) * 2018-07-12 2020-01-16 Shenzhen Xpectvision Technology Co., Ltd. Methods of making a radiation detector
EP3605151A1 (en) * 2018-08-01 2020-02-05 Koninklijke Philips N.V. Photon counting detector
DE102018219061A1 (de) * 2018-10-25 2020-04-30 Redlen Technologies, Inc. Röntgen-zu-infrarot-umwandlungsstrukturen zum beleuchten von röntgendetektoren mit infrarotlicht für verbesserte leistung

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JPS61223689A (ja) * 1985-03-29 1986-10-04 Shimadzu Corp 半導体放射線位置検出装置
JP2564979B2 (ja) * 1990-09-26 1996-12-18 株式会社島津製作所 放射線検出器
US5677539A (en) 1995-10-13 1997-10-14 Digirad Semiconductor radiation detector with enhanced charge collection
DE19616545B4 (de) 1996-04-25 2006-05-11 Siemens Ag Schneller Strahlungsdetektor
EP0848885B1 (en) * 1996-07-08 2004-10-06 Koninklijke Philips Electronics N.V. X-ray examination apparatus with a semiconductor x-ray detector
US6373064B1 (en) * 1998-10-02 2002-04-16 Sandia Corporation Semiconductor radiation spectrometer
DE10132924A1 (de) * 2001-07-06 2003-01-16 Philips Corp Intellectual Pty Flacher dynamischer Strahlungsdetektor
JP4211435B2 (ja) 2002-08-30 2009-01-21 株式会社島津製作所 放射線検出器
US7223981B1 (en) 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
EP1583985B1 (en) * 2003-01-06 2017-02-22 Koninklijke Philips N.V. Radiation detector with shielded electronics for computed tomography
US7196334B2 (en) 2003-04-24 2007-03-27 Koninklijke Philips Electronics N.V. X-ray detector element
JP2005024368A (ja) * 2003-07-01 2005-01-27 Fuji Photo Film Co Ltd 放射線画像検出器の残像消去方法および装置
DE102005037898B3 (de) * 2005-08-10 2007-04-12 Siemens Ag Festkörperdetektor bzw. Verfahren zur Rücksetzung von Restladungen durch Beleuchtung bei einem Festkörperdetektor
US7652258B2 (en) * 2007-01-08 2010-01-26 Orbotech Medical Solutions Ltd. Method, apparatus, and system of reducing polarization in radiation detectors
EP2088451B1 (en) * 2008-02-05 2016-01-06 PANalytical B.V. Imaging detector
US20100078558A1 (en) * 2008-09-26 2010-04-01 Michael Prokesch Infra-red light stimulated cdZnTe spectroscopic semiconductor x-ray and gamma-ray radiation detector
DE102010015422B4 (de) * 2010-04-19 2013-04-18 Siemens Aktiengesellschaft Röntgendetektor mit einer direkt konvertierenden Halbleiterschicht und Kalibrierverfahren für einen solchen Röntgendetektor
KR101761817B1 (ko) * 2011-03-04 2017-07-26 삼성전자주식회사 대면적 엑스선 검출기
CN103562746B (zh) * 2011-05-11 2018-08-07 皇家飞利浦有限公司 电离辐射探测
DE102012213404B3 (de) * 2012-07-31 2014-01-23 Siemens Aktiengesellschaft Verfahren zur Temperaturstabilisierung, Röntgenstrahlungsdetektor und CT-System

Also Published As

Publication number Publication date
RU2015121968A (ru) 2017-01-10
JP2016504567A (ja) 2016-02-12
WO2014072939A1 (en) 2014-05-15
CN104781695B (zh) 2019-06-28
JP6310471B2 (ja) 2018-04-11
US20150285676A1 (en) 2015-10-08
EP2917766A1 (en) 2015-09-16
EP2917766B1 (en) 2019-11-06
US9664558B2 (en) 2017-05-30
CN104781695A (zh) 2015-07-15

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2487 DE 04-09-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.