BR112013022384A2 - método para crescimento de cristal de tensoativo de um composto de metal-não metal - Google Patents
método para crescimento de cristal de tensoativo de um composto de metal-não metalInfo
- Publication number
- BR112013022384A2 BR112013022384A2 BR112013022384A BR112013022384A BR112013022384A2 BR 112013022384 A2 BR112013022384 A2 BR 112013022384A2 BR 112013022384 A BR112013022384 A BR 112013022384A BR 112013022384 A BR112013022384 A BR 112013022384A BR 112013022384 A2 BR112013022384 A2 BR 112013022384A2
- Authority
- BR
- Brazil
- Prior art keywords
- metal
- surfactant
- crystal growth
- wetting layer
- molecules
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/068—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
método para surfactante de crescimento de cristais de um composto de metal-metal método para cultivo de cristais de um surfactante de um composto de metal- não metal (mn), incluindo os procedimentos de fornecimento de uma semente cristalina, formando uma fina camada umectante de metal líquido sobre uma superfície de semente cristalina, definindo uma temperatura da semente cristalina abaixo de uma temperatura mínima necessária para a dissolução de moléculas de mn na camada umectante e acima de um ponto de fusão do primeiro metal, cada uma das moléculas do mn sendo formada a partir de um átomo de um segundo metal e um átomo de um primeiro não metal, introduzindo as moléculas de mn que formam uma monocamada surfactante de mn, facilitando assim a formação da camada umectante entre a monocamada surfactante de mn e a superfície da semente cristalina, e regulando a espessura da camada umectante, dessa forma cultivando uma camada epitaxial do composto de mn sobre a semente cristalina.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161449421P | 2011-03-04 | 2011-03-04 | |
PCT/IL2012/000103 WO2012120497A1 (en) | 2011-03-04 | 2012-03-04 | Method for surfactant crystal growth of a metal-nonmetal compound |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112013022384A2 true BR112013022384A2 (pt) | 2016-12-06 |
Family
ID=45976468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112013022384A BR112013022384A2 (pt) | 2011-03-04 | 2012-03-04 | método para crescimento de cristal de tensoativo de um composto de metal-não metal |
Country Status (9)
Country | Link |
---|---|
US (1) | US8945302B2 (pt) |
EP (1) | EP2688847A1 (pt) |
JP (1) | JP2014508415A (pt) |
KR (1) | KR20140024303A (pt) |
CN (1) | CN103562149A (pt) |
AU (1) | AU2012226395A1 (pt) |
BR (1) | BR112013022384A2 (pt) |
CA (1) | CA2829064A1 (pt) |
WO (1) | WO2012120497A1 (pt) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140024303A (ko) | 2011-03-04 | 2014-02-28 | 모자이크 크리스탈즈 리미티드 | 금속-비금속 화합물의 계면활성제 결정 성장을 위한 방법 |
US9184233B2 (en) * | 2013-02-27 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for defect passivation to reduce junction leakage for finFET device |
CN105543969B (zh) * | 2016-01-25 | 2018-05-01 | 南通同方半导体有限公司 | 一种改善AlN薄膜晶体质量的生长方法 |
CN106637412A (zh) * | 2016-11-14 | 2017-05-10 | 东莞市中镓半导体科技有限公司 | 氮化物晶体的液相生长装置 |
CN107895102B (zh) * | 2017-11-23 | 2021-08-17 | 苏州矩阵光电有限公司 | 一种生长指令检查方法及装置 |
CN111312411B (zh) * | 2018-12-11 | 2022-10-21 | 核工业西南物理研究院 | 液化惰性气体射流注入防护等离子体破裂的方法 |
CN110344111B (zh) * | 2019-07-02 | 2020-12-29 | 吉林大学 | 一种铜镓铟三元多晶材料的合成方法及其应用 |
US11441234B2 (en) * | 2019-10-11 | 2022-09-13 | University Of Louisville Research Foundation, Inc. | Liquid phase epitaxy of III-V materials and alloys |
US11680337B2 (en) | 2020-04-03 | 2023-06-20 | Psiquantum, Corp. | Fabrication of films having controlled stoichiometry using molecular beam epitaxy |
CN112760611B (zh) * | 2020-12-22 | 2022-12-27 | 温州大学激光与光电智能制造研究院 | 一种提高mocvd外延薄膜质量的优化生长方法 |
CN114381806B (zh) * | 2021-12-23 | 2023-07-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | 二维氮化铝晶体的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
US7097707B2 (en) * | 2001-12-31 | 2006-08-29 | Cree, Inc. | GaN boule grown from liquid melt using GaN seed wafers |
JP2007197302A (ja) | 2005-12-28 | 2007-08-09 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の製造方法および製造装置 |
JP2010534605A (ja) * | 2007-02-22 | 2010-11-11 | モザイク クリスタルズ | 第iii族金属窒化物とその製造方法 |
US20090297774A1 (en) | 2008-05-28 | 2009-12-03 | Praveen Chaudhari | Methods of growing heterepitaxial single crystal or large grained semiconductor films and devices thereon |
US8491718B2 (en) | 2008-05-28 | 2013-07-23 | Karin Chaudhari | Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
US7892513B2 (en) * | 2009-01-26 | 2011-02-22 | Sumitomo Electric Industries, Ltd. | Group III nitride crystal and method of its growth |
KR20140024303A (ko) | 2011-03-04 | 2014-02-28 | 모자이크 크리스탈즈 리미티드 | 금속-비금속 화합물의 계면활성제 결정 성장을 위한 방법 |
-
2012
- 2012-03-04 KR KR1020137026180A patent/KR20140024303A/ko not_active Application Discontinuation
- 2012-03-04 AU AU2012226395A patent/AU2012226395A1/en not_active Abandoned
- 2012-03-04 BR BR112013022384A patent/BR112013022384A2/pt not_active IP Right Cessation
- 2012-03-04 WO PCT/IL2012/000103 patent/WO2012120497A1/en active Application Filing
- 2012-03-04 CA CA2829064A patent/CA2829064A1/en not_active Abandoned
- 2012-03-04 EP EP12715208.0A patent/EP2688847A1/en not_active Withdrawn
- 2012-03-04 JP JP2013555991A patent/JP2014508415A/ja active Pending
- 2012-03-04 CN CN201280019383.6A patent/CN103562149A/zh active Pending
- 2012-03-04 US US14/002,820 patent/US8945302B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20130333613A1 (en) | 2013-12-19 |
WO2012120497A4 (en) | 2012-11-01 |
AU2012226395A1 (en) | 2013-10-03 |
EP2688847A1 (en) | 2014-01-29 |
KR20140024303A (ko) | 2014-02-28 |
US8945302B2 (en) | 2015-02-03 |
JP2014508415A (ja) | 2014-04-03 |
CA2829064A1 (en) | 2012-09-13 |
WO2012120497A1 (en) | 2012-09-13 |
CN103562149A (zh) | 2014-02-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application fees: application dismissed [chapter 8.6 patent gazette] | ||
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |