BR112012017286A2 - sistema e aparelho de formação de filme fino e método de formação de filme fino - Google Patents

sistema e aparelho de formação de filme fino e método de formação de filme fino

Info

Publication number
BR112012017286A2
BR112012017286A2 BR112012017286A BR112012017286A BR112012017286A2 BR 112012017286 A2 BR112012017286 A2 BR 112012017286A2 BR 112012017286 A BR112012017286 A BR 112012017286A BR 112012017286 A BR112012017286 A BR 112012017286A BR 112012017286 A2 BR112012017286 A2 BR 112012017286A2
Authority
BR
Brazil
Prior art keywords
substrate
thin film
film forming
heating
forming method
Prior art date
Application number
BR112012017286A
Other languages
English (en)
Inventor
Zenitani Yoshitaka
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of BR112012017286A2 publication Critical patent/BR112012017286A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

sistema e aparelho de formação de filme fino e método de formação de filme fino. a presente invenção refere-se a uma câmara de aquecimento (3) representnaod uma das câmaras de processo, na qual um aparelho de aquecimento (20) para aquecer um substrato (16) e um aparelho de transferência de substrato (12a) para mover o substrato (16) e o aparelho de aquecimento (20) com relação um ao outro são dispostos, uma câmara de pulverização de zno (4) representando uma das câmaras de processo, onde um aparelho de pulverização (26) para formação de um filme fino no substrato aquecido (16) é dispostol, e um dispositivo de controle (22) para controlar o aparelho de transferência de substrato (12a) fornecidos. o aparelho de transferência de substrato (12a) é controlado pelo dispositivo de controle (22) de modo que o substrato (16) e o aparelho de auqecimento (20) na câmara de aquecimento (3) continuem a mover um com relação ao outro quando a transferência do substrato (16) da câmara de aquecimento (3) se torna impossível. de acordo com essa construção, a deformação e rachadura térmica do substrato podem ser evitadas.
BR112012017286A 2010-01-15 2010-12-29 sistema e aparelho de formação de filme fino e método de formação de filme fino BR112012017286A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010006776A JP4761326B2 (ja) 2010-01-15 2010-01-15 薄膜形成装置システムおよび薄膜形成方法
PCT/JP2010/073834 WO2011086868A1 (ja) 2010-01-15 2010-12-29 薄膜形成装置システムおよび薄膜形成方法

Publications (1)

Publication Number Publication Date
BR112012017286A2 true BR112012017286A2 (pt) 2019-09-24

Family

ID=44304146

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012017286A BR112012017286A2 (pt) 2010-01-15 2010-12-29 sistema e aparelho de formação de filme fino e método de formação de filme fino

Country Status (7)

Country Link
US (1) US20120295028A1 (pt)
EP (1) EP2524975A4 (pt)
JP (1) JP4761326B2 (pt)
KR (1) KR20120107012A (pt)
CN (1) CN102803549A (pt)
BR (1) BR112012017286A2 (pt)
WO (1) WO2011086868A1 (pt)

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JP2012177151A (ja) * 2011-02-25 2012-09-13 Sumitomo Heavy Ind Ltd 成膜装置、及び成膜基板製造方法
JP5927816B2 (ja) * 2011-09-12 2016-06-01 富士通セミコンダクター株式会社 電子部品製造装置
KR101988014B1 (ko) * 2012-04-18 2019-06-13 삼성디스플레이 주식회사 어레이 기판의 제조 방법 및 이에 사용되는 제조 장치
US20140137899A1 (en) * 2012-11-21 2014-05-22 Dynaloy, Llc Process for removing substances from substrates
US20150093500A1 (en) * 2013-09-30 2015-04-02 Intermolecular, Inc. Corrosion-Resistant Silver Coatings with Improved Adhesion to III-V Materials
CN105088151A (zh) * 2014-04-15 2015-11-25 北京北方微电子基地设备工艺研究中心有限责任公司 衬底上的孔隙沉积工艺及半导体加工设备
US9611542B2 (en) * 2015-05-01 2017-04-04 Linco Technology Co., Ltd. Film deposition system having a substrate carrier and a cooling device
KR101866512B1 (ko) 2017-04-13 2018-07-04 (주)앤피에스 기판 처리 장치 및 이를 이용한 기판 처리 방법
CN108588667B (zh) * 2017-12-27 2020-10-02 深圳市华星光电技术有限公司 一种真空大气转换腔的充气装置及充气方法、真空溅射设备
CN108193189A (zh) * 2017-12-27 2018-06-22 深圳市华星光电技术有限公司 一种真空溅射设备及其真空大气交换装置
JP7045891B2 (ja) 2018-03-20 2022-04-01 キオクシア株式会社 半導体製造方法、半導体製造装置及び半導体装置
CN108682646A (zh) * 2018-07-11 2018-10-19 苏州焜原光电有限公司 InSb薄膜转移装置
CN109402575A (zh) * 2018-12-27 2019-03-01 北京铂阳顶荣光伏科技有限公司 基座以及蒸镀设备
KR102654241B1 (ko) * 2019-01-16 2024-04-02 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 시스템, 진공 프로세싱 시스템을 위한 기판 챔버, 및 기판을 냉각하는 방법
US20200350188A1 (en) * 2019-05-02 2020-11-05 Intevac, Inc. Inline vacuum processing system with substrate and carrier cooling
CN111474831A (zh) * 2020-04-20 2020-07-31 深圳市华星光电半导体显示技术有限公司 一种加热装置及基板的加热方法

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JP2671191B2 (ja) * 1994-02-09 1997-10-29 アネルバ株式会社 薄膜作製装置の基板加熱機構
JP3157108B2 (ja) * 1996-08-26 2001-04-16 株式会社ノリタケカンパニーリミテド 膜形成素材を含む基板の焼成方法および装置
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Also Published As

Publication number Publication date
EP2524975A4 (en) 2014-03-19
US20120295028A1 (en) 2012-11-22
EP2524975A1 (en) 2012-11-21
CN102803549A (zh) 2012-11-28
JP2011146565A (ja) 2011-07-28
KR20120107012A (ko) 2012-09-27
JP4761326B2 (ja) 2011-08-31
WO2011086868A1 (ja) 2011-07-21

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2543 DE 01-10-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.