BR0103435B1 - composiÇço de tonalizador. - Google Patents
composiÇço de tonalizador.Info
- Publication number
- BR0103435B1 BR0103435B1 BRPI0103435-9A BR0103435A BR0103435B1 BR 0103435 B1 BR0103435 B1 BR 0103435B1 BR 0103435 A BR0103435 A BR 0103435A BR 0103435 B1 BR0103435 B1 BR 0103435B1
- Authority
- BR
- Brazil
- Prior art keywords
- toner composition
- toner
- composition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Developing Agents For Electrophotography (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/643,211 US6309925B1 (en) | 2000-08-22 | 2000-08-22 | Method for manufacturing capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
BR0103435A BR0103435A (pt) | 2002-07-30 |
BR0103435B1 true BR0103435B1 (pt) | 2011-06-14 |
Family
ID=24579831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0103435-9A BR0103435B1 (pt) | 2000-08-22 | 2001-08-17 | composiÇço de tonalizador. |
Country Status (2)
Country | Link |
---|---|
US (1) | US6309925B1 (pt) |
BR (1) | BR0103435B1 (pt) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100447729B1 (ko) * | 2002-05-03 | 2004-09-10 | 주식회사 하이닉스반도체 | 반도체 장치의 제조 방법 |
US20050170598A1 (en) * | 2004-01-29 | 2005-08-04 | Howard Gregory E. | Silicided amorphous polysilicon - metal capacitor |
US7118958B2 (en) * | 2005-03-03 | 2006-10-10 | Texas Instruments Incorporated | Method of manufacturing a metal-insulator-metal capacitor using an etchback process |
KR100848241B1 (ko) * | 2006-12-27 | 2008-07-24 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조방법 |
CN110634845A (zh) | 2019-09-12 | 2019-12-31 | 上海华力集成电路制造有限公司 | Mim电容的制造方法及一mim电容 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393691A (en) * | 1993-07-28 | 1995-02-28 | Taiwan Semiconductor Manufacturing Company | Fabrication of w-polycide-to-poly capacitors with high linearity |
US5866451A (en) * | 1996-05-28 | 1999-02-02 | Taiwan Semiconductor Manufacturing Company Ltd | Method of making a semiconductor device having 4t sram and mixed-mode capacitor in logic |
US6075266A (en) * | 1997-01-09 | 2000-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device having MIS transistors and capacitor |
US6054359A (en) * | 1999-06-14 | 2000-04-25 | Taiwan Semiconductor Manufacturing Company | Method for making high-sheet-resistance polysilicon resistors for integrated circuits |
-
2000
- 2000-08-22 US US09/643,211 patent/US6309925B1/en not_active Expired - Fee Related
-
2001
- 2001-08-17 BR BRPI0103435-9A patent/BR0103435B1/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
BR0103435A (pt) | 2002-07-30 |
US6309925B1 (en) | 2001-10-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 17/08/2001, OBSERVADAS AS CONDICOES LEGAIS. |
|
B21F | Lapse acc. art. 78, item iv - on non-payment of the annual fees in time |
Free format text: REFERENTE A 15A ANUIDADE. |
|
B24J | Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12) |
Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2385 DE 20-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |