BE859262A - Procede pour la formation d'une couche epitaxiale de matiere sur une surface d'un substrat - Google Patents
Procede pour la formation d'une couche epitaxiale de matiere sur une surface d'un substratInfo
- Publication number
- BE859262A BE859262A BE181360A BE181360A BE859262A BE 859262 A BE859262 A BE 859262A BE 181360 A BE181360 A BE 181360A BE 181360 A BE181360 A BE 181360A BE 859262 A BE859262 A BE 859262A
- Authority
- BE
- Belgium
- Prior art keywords
- substrate
- forming
- epitaxial layer
- epitaxial
- layer
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72968276A | 1976-10-05 | 1976-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE859262A true BE859262A (fr) | 1978-01-16 |
Family
ID=24932135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE181360A BE859262A (fr) | 1976-10-05 | 1977-09-30 | Procede pour la formation d'une couche epitaxiale de matiere sur une surface d'un substrat |
Country Status (9)
Country | Link |
---|---|
US (1) | US4113547A (fr) |
JP (1) | JPS5346274A (fr) |
BE (1) | BE859262A (fr) |
DE (1) | DE2744601A1 (fr) |
ES (1) | ES462931A1 (fr) |
FR (1) | FR2366871A1 (fr) |
IT (1) | IT1091351B (fr) |
NL (1) | NL7710659A (fr) |
SE (1) | SE7710800L (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE7707767U1 (de) * | 1977-03-14 | 1977-09-08 | Balzers Hochvakuum Gmbh, 6200 Wiesbaden | Halterung fuer substratplaettchen |
US4386255A (en) * | 1979-12-17 | 1983-05-31 | Rca Corporation | Susceptor for rotary disc reactor |
US4468259A (en) * | 1981-12-04 | 1984-08-28 | Ushio Denki Kabushiki Kaisha | Uniform wafer heating by controlling light source and circumferential heating of wafer |
US4469529A (en) * | 1981-12-04 | 1984-09-04 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating |
JPS58223320A (ja) * | 1982-06-22 | 1983-12-24 | Ushio Inc | 不純物拡散方法 |
US4535228A (en) * | 1982-12-28 | 1985-08-13 | Ushio Denki Kabushiki Kaisha | Heater assembly and a heat-treatment method of semiconductor wafer using the same |
US4504730A (en) * | 1983-10-04 | 1985-03-12 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafer by means of application of radiated light |
US4535227A (en) * | 1983-10-04 | 1985-08-13 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafer by means of application of radiated light |
US4560420A (en) * | 1984-06-13 | 1985-12-24 | At&T Technologies, Inc. | Method for reducing temperature variations across a semiconductor wafer during heating |
US5308594A (en) * | 1985-12-04 | 1994-05-03 | Massachusetts Institute Of Technology | Edge-heat-sink technique for zone melting recrystallization of semiconductor-on-insulator films |
US5296089A (en) * | 1985-12-04 | 1994-03-22 | Massachusetts Institute Of Technology | Enhanced radiative zone-melting recrystallization method and apparatus |
US4780174A (en) * | 1986-12-05 | 1988-10-25 | Lan Shan Ming | Dislocation-free epitaxial growth in radio-frequency heating reactor |
US5198034A (en) * | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US4981815A (en) * | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
US5169453A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
US4932358A (en) * | 1989-05-18 | 1990-06-12 | Genus, Inc. | Perimeter wafer seal |
US5094885A (en) * | 1990-10-12 | 1992-03-10 | Genus, Inc. | Differential pressure cvd chuck |
US5149675A (en) * | 1990-12-31 | 1992-09-22 | Texas Instruments Incorporated | Ring crystallization of wafers to prevent thermal shock |
US5820686A (en) * | 1993-01-21 | 1998-10-13 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5580388A (en) * | 1993-01-21 | 1996-12-03 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
JP3184000B2 (ja) * | 1993-05-10 | 2001-07-09 | 株式会社東芝 | 薄膜の形成方法およびその装置 |
US5590239A (en) * | 1994-06-06 | 1996-12-31 | Motorola | Planar uniform heating surface with additional circumscribing ring |
WO1996000314A2 (fr) * | 1994-06-24 | 1996-01-04 | Aixtron Gmbh | Reacteur et procede permettant de recouvrir des substrats plans |
US6279506B1 (en) | 1995-06-26 | 2001-08-28 | Aixtron Ag | Reactor for coating plane substrates and method for producing said substrates |
JP2701767B2 (ja) * | 1995-01-27 | 1998-01-21 | 日本電気株式会社 | 気相成長装置 |
US6176667B1 (en) | 1996-04-30 | 2001-01-23 | Applied Materials, Inc. | Multideck wafer processing system |
US5748434A (en) * | 1996-06-14 | 1998-05-05 | Applied Materials, Inc. | Shield for an electrostatic chuck |
JP3596710B2 (ja) * | 1996-09-10 | 2004-12-02 | 信越半導体株式会社 | 気相成長装置用サセプタ |
US6132517A (en) * | 1997-02-21 | 2000-10-17 | Applied Materials, Inc. | Multiple substrate processing apparatus for enhanced throughput |
US6222990B1 (en) * | 1997-12-03 | 2001-04-24 | Steag Rtp Systems | Heating element for heating the edges of wafers in thermal processing chambers |
KR100436657B1 (ko) * | 2001-12-17 | 2004-06-22 | 미래산업 주식회사 | 반도체 소자 테스트 핸들러의 소자 가열 및 냉각장치 |
US6818533B2 (en) * | 2002-05-09 | 2004-11-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Epitaxial plasma enhanced chemical vapor deposition (PECVD) method providing epitaxial layer with attenuated defects |
US20060194059A1 (en) * | 2005-02-25 | 2006-08-31 | Honeywell International Inc. | Annular furnace spacers and method of using same |
WO2008067854A1 (fr) * | 2006-12-08 | 2008-06-12 | Lumilog | Procédé de préparation d'un monocristal de nitrure par le développement épitaxial sur un substrat en prévenant le développement sur les bords du substrat |
TW200952115A (en) * | 2008-06-13 | 2009-12-16 | Huga Optotech Inc | Wafer carrier and epitaxy machine using the same |
KR101137545B1 (ko) * | 2009-12-30 | 2012-04-20 | 주식회사 탑 엔지니어링 | 일체형 웨이퍼 트레이 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1297085B (de) * | 1964-01-10 | 1969-06-12 | Siemens Ag | Verfahren zum Abscheiden einer einkristallinen Halbleiterschicht |
DE1289832B (de) * | 1964-08-21 | 1969-02-27 | Siemens Ag | Vorrichtung zur Herstellung planer Oberflaechen von aus der Gasphase abgeschiedenen Halbleiterkristallschichten |
DE1544264C3 (de) * | 1965-07-01 | 1974-10-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von Halbleiterschichten durch Abscheiden aus der Gasphase |
US3436255A (en) * | 1965-07-06 | 1969-04-01 | Monsanto Co | Electric resistance heaters |
US3539759A (en) * | 1968-11-08 | 1970-11-10 | Ibm | Susceptor structure in silicon epitaxy |
NL7209297A (fr) * | 1972-07-01 | 1974-01-03 | ||
US3845738A (en) * | 1973-09-12 | 1974-11-05 | Rca Corp | Vapor deposition apparatus with pyrolytic graphite heat shield |
-
1977
- 1977-09-27 SE SE7710800A patent/SE7710800L/xx unknown
- 1977-09-29 NL NL7710659A patent/NL7710659A/xx not_active Application Discontinuation
- 1977-09-30 BE BE181360A patent/BE859262A/fr unknown
- 1977-10-04 JP JP11868777A patent/JPS5346274A/ja active Pending
- 1977-10-04 FR FR7729814A patent/FR2366871A1/fr not_active Withdrawn
- 1977-10-04 IT IT69207/77A patent/IT1091351B/it active
- 1977-10-04 DE DE19772744601 patent/DE2744601A1/de active Pending
- 1977-10-05 ES ES462931A patent/ES462931A1/es not_active Expired
- 1977-11-21 US US05/853,126 patent/US4113547A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL7710659A (nl) | 1978-04-07 |
US4113547A (en) | 1978-09-12 |
ES462931A1 (es) | 1978-06-01 |
DE2744601A1 (de) | 1978-04-06 |
JPS5346274A (en) | 1978-04-25 |
IT1091351B (it) | 1985-07-06 |
FR2366871A1 (fr) | 1978-05-05 |
SE7710800L (sv) | 1978-04-06 |
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