BE845291A - Procede pour realiser des structures dans des surfaces de corps solides par attaque ionique - Google Patents
Procede pour realiser des structures dans des surfaces de corps solides par attaque ioniqueInfo
- Publication number
- BE845291A BE845291A BE169897A BE169897A BE845291A BE 845291 A BE845291 A BE 845291A BE 169897 A BE169897 A BE 169897A BE 169897 A BE169897 A BE 169897A BE 845291 A BE845291 A BE 845291A
- Authority
- BE
- Belgium
- Prior art keywords
- solid body
- body surfaces
- ionic attack
- realizing
- structures
- Prior art date
Links
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0335—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2536718A DE2536718C3 (de) | 1975-08-18 | 1975-08-18 | Verfahren zur Herstellung geätzter Strukturen in Festkörperoberflächen durch Ionenätzung und Bestrahlungsmaske zur Verwendung in diesem Verfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
BE845291A true BE845291A (fr) | 1976-12-16 |
Family
ID=5954228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE169897A BE845291A (fr) | 1975-08-18 | 1976-08-18 | Procede pour realiser des structures dans des surfaces de corps solides par attaque ionique |
Country Status (9)
Country | Link |
---|---|
US (1) | US4092210A (fr) |
JP (1) | JPS6013071B2 (fr) |
BE (1) | BE845291A (fr) |
CA (1) | CA1070264A (fr) |
DE (1) | DE2536718C3 (fr) |
FR (1) | FR2321367A1 (fr) |
GB (1) | GB1513218A (fr) |
IT (1) | IT1066889B (fr) |
NL (1) | NL7609175A (fr) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4292384A (en) * | 1977-09-30 | 1981-09-29 | Horizons Research Incorporated | Gaseous plasma developing and etching process employing low voltage DC generation |
US4180432A (en) * | 1977-12-19 | 1979-12-25 | International Business Machines Corporation | Process for etching SiO2 layers to silicon in a moderate vacuum gas plasma |
US4183780A (en) * | 1978-08-21 | 1980-01-15 | International Business Machines Corporation | Photon enhanced reactive ion etching |
US4226666A (en) * | 1978-08-21 | 1980-10-07 | International Business Machines Corporation | Etching method employing radiation and noble gas halide |
US4340276A (en) | 1978-11-01 | 1982-07-20 | Minnesota Mining And Manufacturing Company | Method of producing a microstructured surface and the article produced thereby |
JPS5565365A (en) * | 1978-11-07 | 1980-05-16 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method |
US4275286A (en) * | 1978-12-04 | 1981-06-23 | Hughes Aircraft Company | Process and mask for ion beam etching of fine patterns |
US4289574A (en) * | 1979-04-30 | 1981-09-15 | Fairchild Camera & Instrument Corp. | Process for patterning metal connections on a semiconductor structure by using an aluminum oxide etch resistant layer |
US4243476A (en) * | 1979-06-29 | 1981-01-06 | International Business Machines Corporation | Modification of etch rates by solid masking materials |
US4259145A (en) * | 1979-06-29 | 1981-03-31 | International Business Machines Corporation | Ion source for reactive ion etching |
DE3070833D1 (en) * | 1980-09-19 | 1985-08-08 | Ibm Deutschland | Structure with a silicon body that presents an aperture and method of making this structure |
US4326936A (en) * | 1980-10-14 | 1982-04-27 | Rockwell International Corporation | Repeatable method for sloping walls of thin film material |
JPS5775429A (en) * | 1980-10-28 | 1982-05-12 | Toshiba Corp | Manufacture of semiconductor device |
US4344996A (en) * | 1980-12-19 | 1982-08-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Surface texturing of fluoropolymers |
US4351698A (en) * | 1981-10-16 | 1982-09-28 | Memorex Corporation | Variable sloped etching of thin film heads |
US4362598A (en) * | 1981-10-26 | 1982-12-07 | General Electric Company | Method of patterning a thick resist layer of polymeric plastic |
US4385975A (en) * | 1981-12-30 | 1983-05-31 | International Business Machines Corp. | Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate |
DE3221981C2 (de) * | 1982-06-11 | 1985-08-29 | Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe | Verfahren zum Herstellen von aus Trennkörpern mit Abschlußplatten bestehenden Trenndüsenelementen zur Trennung gas- oder dampfförmiger Gemische |
US4496419A (en) * | 1983-02-28 | 1985-01-29 | Cornell Research Foundation, Inc. | Fine line patterning method for submicron devices |
US4522681A (en) * | 1984-04-23 | 1985-06-11 | General Electric Company | Method for tapered dry etching |
CA1281307C (fr) * | 1985-04-01 | 1991-03-12 | Allan R. Knoll | Methode de gravure au plasma d'un substrat avec un compose gazeux d'organohalogenure |
US4655384A (en) * | 1985-10-18 | 1987-04-07 | The Babcock & Wilcox Company | Method of fabricating fiber-reinforced metal composites |
GB8606821D0 (en) | 1986-03-19 | 1986-04-23 | Pa Consulting Services | Corneal reprofiling |
US5091047A (en) * | 1986-09-11 | 1992-02-25 | National Semiconductor Corp. | Plasma etching using a bilayer mask |
US4906594A (en) * | 1987-06-12 | 1990-03-06 | Agency Of Industrial Science And Technology | Surface smoothing method and method of forming SOI substrate using the surface smoothing method |
US4869777A (en) * | 1988-12-16 | 1989-09-26 | Ibm Corporation | Method for selectively etching the materials of a composite of two materials |
US4938841A (en) * | 1989-10-31 | 1990-07-03 | Bell Communications Research, Inc. | Two-level lithographic mask for producing tapered depth |
US5275695A (en) * | 1992-12-18 | 1994-01-04 | International Business Machines Corporation | Process for generating beveled edges |
US5804088A (en) * | 1996-07-12 | 1998-09-08 | Texas Instruments Incorporated | Intermediate layer lithography |
US5881445A (en) * | 1997-07-30 | 1999-03-16 | Mauro; George | Method of producing micro-apertures in optically flat surfaces and structures when made by the method |
FR2794892B1 (fr) * | 1999-06-08 | 2003-06-27 | X Ion | Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre |
US6613243B2 (en) | 2000-07-25 | 2003-09-02 | Shipley Company, L.L.C. | Method of making a 3-D structure using an erodable mask formed from a film having a composition that varies in its direction of thickness |
JP3671854B2 (ja) * | 2001-04-05 | 2005-07-13 | 松下電器産業株式会社 | シリコン系基板の表面処理方法 |
US7737534B2 (en) * | 2008-06-10 | 2010-06-15 | Northrop Grumman Systems Corporation | Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer |
CN103165416B (zh) * | 2011-12-13 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | 用于刻蚀的硬掩膜及其制备方法以及mos器件的制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
NL7401859A (nl) * | 1974-02-12 | 1975-08-14 | Philips Nv | Werkwijze voor het vervaardigen van een patroon en of meer lagen op een ondergrond door selijk verwijderen van deze laag of lagen sputteretsen en voorwerpen, in het bijzon- alfgeleiderinrichtingen, vervaardigd met ssing van deze werkwijze. |
US3975252A (en) * | 1975-03-14 | 1976-08-17 | Bell Telephone Laboratories, Incorporated | High-resolution sputter etching |
US3986912A (en) * | 1975-09-04 | 1976-10-19 | International Business Machines Corporation | Process for controlling the wall inclination of a plasma etched via hole |
-
1975
- 1975-08-18 DE DE2536718A patent/DE2536718C3/de not_active Expired
-
1976
- 1976-07-16 US US05/705,785 patent/US4092210A/en not_active Expired - Lifetime
- 1976-07-20 GB GB30095/76A patent/GB1513218A/en not_active Expired
- 1976-07-26 FR FR7622729A patent/FR2321367A1/fr active Granted
- 1976-08-13 JP JP51096889A patent/JPS6013071B2/ja not_active Expired
- 1976-08-17 CA CA259,233A patent/CA1070264A/fr not_active Expired
- 1976-08-18 BE BE169897A patent/BE845291A/fr unknown
- 1976-08-18 NL NL7609175A patent/NL7609175A/xx not_active Application Discontinuation
- 1976-09-06 IT IT26095/76A patent/IT1066889B/it active
Also Published As
Publication number | Publication date |
---|---|
JPS5224946A (en) | 1977-02-24 |
DE2536718C3 (de) | 1978-04-27 |
JPS6013071B2 (ja) | 1985-04-04 |
FR2321367A1 (fr) | 1977-03-18 |
DE2536718B2 (de) | 1977-08-25 |
NL7609175A (nl) | 1977-02-22 |
CA1070264A (fr) | 1980-01-22 |
IT1066889B (it) | 1985-03-12 |
GB1513218A (en) | 1978-06-07 |
FR2321367B1 (fr) | 1981-01-30 |
DE2536718A1 (de) | 1977-02-24 |
US4092210A (en) | 1978-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2321367A1 (fr) | Procede pour realiser des structures dans des surfaces de corps solides par attaque ionique | |
BE840164A (fr) | Procede de preparation continue de polyterephtalates de butylene | |
BE856355A (fr) | Procede pour combattre les infections virales | |
BE846555A (fr) | Procede pour la preparation de polyurethannes | |
RO74936A (fr) | Procede pour la preparation des mercaptoazetidiones | |
FR2304687A1 (fr) | Procede pour inhiber la corrosion de metaux | |
PT65388B (fr) | Procede pour la preparation de peptides | |
FR2278755A1 (fr) | Combustible sous forme de pate et procede pour le fabriquer | |
PT65719B (fr) | Procede pour la preparation de nouvelles preparations galeniques | |
PT64709B (fr) | Procede pour la preparation d'une composition de tretinoine dans un vehicule de gel pour le traitement de l'acne | |
BE846394A (fr) | Procede pour la preparation de solutions concentrees de tension-actifs fluores amphoteres | |
FR2312299A1 (fr) | Procede de surveillance par diffraction de jets dans le mode de rayleigh | |
FR2313380A1 (fr) | Procede pour la preparation de methacrylate de glycidyle | |
FR2297842A1 (fr) | Procede de preparation d'olefino-sulfonates sous forme hautement concentree | |
PT64718A (fr) | Procede pour la preparation de phenyalcoylamines | |
FR2318106A1 (fr) | Procede perfectionne pour la preparation de peroxycarbonate de sodium | |
BE837724A (fr) | Procede perfectionne pour realiser des polycondensations en solution | |
FR2298612A1 (fr) | Procede perfectionne pour | |
BE838200A (fr) | Procede pour la preparation de chlorures de chloroalcoylbenzene | |
BE861399A (fr) | Procede pour le traitement electrochimique de surfaces metalliques | |
BE846170A (fr) | L'acide hydroxy-1 propene-2,3 sulfonique-3 et ses sels de metaux et procede pour leur preparation | |
FR2305508A1 (fr) | Procede pour oxyder des surfaces de chrome | |
RO72558A (fr) | Procede pour la preparation des cycloalcanpyrazoles | |
FR2296628A1 (fr) | Procede pour la preparation de chloroamino-s-triazines | |
FR2348174A1 (fr) | Procede pour la preparation de dihalogenures gemines |