BE756040A - Procede pour former, par implantation d'ions, une zone localisee dans un corps de semi-conducteur - Google Patents
Procede pour former, par implantation d'ions, une zone localisee dans un corps de semi-conducteurInfo
- Publication number
- BE756040A BE756040A BE756040DA BE756040A BE 756040 A BE756040 A BE 756040A BE 756040D A BE756040D A BE 756040DA BE 756040 A BE756040 A BE 756040A
- Authority
- BE
- Belgium
- Prior art keywords
- implantation
- ions
- forming
- semiconductor body
- localized zone
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85793669A | 1969-09-15 | 1969-09-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE756040A true BE756040A (fr) | 1971-02-15 |
Family
ID=25327063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE756040D BE756040A (fr) | 1969-09-15 | Procede pour former, par implantation d'ions, une zone localisee dans un corps de semi-conducteur |
Country Status (8)
Country | Link |
---|---|
US (1) | US3615874A (fr) |
JP (1) | JPS4838092B1 (fr) |
BE (1) | BE756040A (fr) |
DE (1) | DE2045304A1 (fr) |
FR (1) | FR2061710B1 (fr) |
GB (1) | GB1294516A (fr) |
NL (1) | NL7013399A (fr) |
SE (1) | SE352778B (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3717790A (en) * | 1971-06-24 | 1973-02-20 | Bell Telephone Labor Inc | Ion implanted silicon diode array targets for electron beam camera tubes |
US3947298A (en) * | 1974-01-25 | 1976-03-30 | Raytheon Company | Method of forming junction regions utilizing R.F. sputtering |
US4060427A (en) * | 1976-04-05 | 1977-11-29 | Ibm Corporation | Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps |
JPS5935425A (ja) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | 半導体装置の製造方法 |
GB2137806B (en) * | 1983-04-05 | 1986-10-08 | Standard Telephones Cables Ltd | Ion implantation in semiconductor bodies |
JP2000041320A (ja) * | 1998-05-20 | 2000-02-08 | Yazaki Corp | グロメット |
-
0
- BE BE756040D patent/BE756040A/fr unknown
-
1969
- 1969-09-15 US US857936A patent/US3615874A/en not_active Expired - Lifetime
-
1970
- 1970-09-07 SE SE12104/70A patent/SE352778B/xx unknown
- 1970-09-10 NL NL7013399A patent/NL7013399A/xx unknown
- 1970-09-12 JP JP45079700A patent/JPS4838092B1/ja active Pending
- 1970-09-14 FR FR7033216A patent/FR2061710B1/fr not_active Expired
- 1970-09-14 DE DE19702045304 patent/DE2045304A1/de active Pending
- 1970-09-15 GB GB43902/70A patent/GB1294516A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2061710B1 (fr) | 1976-10-29 |
FR2061710A1 (fr) | 1971-06-25 |
JPS4838092B1 (fr) | 1973-11-15 |
GB1294516A (en) | 1972-11-01 |
SE352778B (fr) | 1973-01-08 |
NL7013399A (fr) | 1971-03-17 |
US3615874A (en) | 1971-10-26 |
DE2045304A1 (de) | 1971-03-18 |
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