BE737612A - - Google Patents
Info
- Publication number
- BE737612A BE737612A BE737612DA BE737612A BE 737612 A BE737612 A BE 737612A BE 737612D A BE737612D A BE 737612DA BE 737612 A BE737612 A BE 737612A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75453368A | 1968-08-22 | 1968-08-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE737612A true BE737612A (xx) | 1970-02-02 |
Family
ID=25035211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE737612D BE737612A (xx) | 1968-08-22 | 1969-08-18 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3571673A (xx) |
| BE (1) | BE737612A (xx) |
| DE (1) | DE1939280A1 (xx) |
| FR (1) | FR2016174B1 (xx) |
| GB (1) | GB1280689A (xx) |
| IL (1) | IL32582A (xx) |
| NL (1) | NL6912470A (xx) |
| RO (1) | RO59767A (xx) |
| SE (1) | SE359402B (xx) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3656029A (en) * | 1970-12-31 | 1972-04-11 | Ibm | BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT |
| US3872492A (en) * | 1972-07-26 | 1975-03-18 | Energy Conversion Devices Inc | Radiation hardened field effect transistor |
| US4064757A (en) * | 1976-10-18 | 1977-12-27 | Allied Chemical Corporation | Glassy metal alloy temperature sensing elements for resistance thermometers |
| EP0095283A3 (en) * | 1982-05-15 | 1984-12-27 | The British Petroleum Company p.l.c. | Memory device |
| US4567503A (en) * | 1983-06-29 | 1986-01-28 | Stauffer Chemical Company | MIS Device employing elemental pnictide or polyphosphide insulating layers |
| US5247349A (en) * | 1982-11-16 | 1993-09-21 | Stauffer Chemical Company | Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure |
| JPH06505368A (ja) * | 1991-01-17 | 1994-06-16 | クロスポイント・ソルーションズ・インコーポレイテッド | フィールドプログラム可能なゲートアレイに使用するための改良されたアンチヒューズ回路構造およびその製造方法 |
| US5322812A (en) * | 1991-03-20 | 1994-06-21 | Crosspoint Solutions, Inc. | Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
| US5233217A (en) * | 1991-05-03 | 1993-08-03 | Crosspoint Solutions | Plug contact with antifuse |
| US5329153A (en) * | 1992-04-10 | 1994-07-12 | Crosspoint Solutions, Inc. | Antifuse with nonstoichiometric tin layer and method of manufacture thereof |
| US7038935B2 (en) * | 2002-08-02 | 2006-05-02 | Unity Semiconductor Corporation | 2-terminal trapped charge memory device with voltage switchable multi-level resistance |
| CN102751319B (zh) * | 2012-07-04 | 2015-04-15 | 中国科学院上海微***与信息技术研究所 | 基于硫系化合物的浪涌保护器件及其制备方法 |
| CN102923676B (zh) * | 2012-10-25 | 2014-10-15 | 中国科学院上海微***与信息技术研究所 | 一种适用于浪涌保护器件的硫系化合物薄膜材料 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3370208A (en) * | 1964-03-25 | 1968-02-20 | Nippon Telegraph & Telephone | Thin film negative resistance semiconductor device |
| DE1213076B (de) * | 1964-07-04 | 1966-03-24 | Danfoss As | Elektronisches Festkoerperbauelement zum Schalten |
| DE1266894B (de) * | 1965-03-03 | 1968-04-25 | Danfoss As | Sperrschichtfreies Halbleiterschaltelement |
| US3409400A (en) * | 1967-03-10 | 1968-11-05 | Du Pont | Binary, ternary and quaternary compounds composed of silicon, nickel, arsenic, and phosphorus |
-
1968
- 1968-08-22 US US754533A patent/US3571673A/en not_active Expired - Lifetime
-
1969
- 1969-07-09 IL IL32582A patent/IL32582A/en unknown
- 1969-08-01 DE DE19691939280 patent/DE1939280A1/de active Pending
- 1969-08-04 GB GB38865/69A patent/GB1280689A/en not_active Expired
- 1969-08-15 NL NL6912470A patent/NL6912470A/xx unknown
- 1969-08-18 RO RO60820A patent/RO59767A/ro unknown
- 1969-08-18 BE BE737612D patent/BE737612A/xx unknown
- 1969-08-20 FR FR696928620A patent/FR2016174B1/fr not_active Expired
- 1969-08-21 SE SE11597/69A patent/SE359402B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2016174B1 (xx) | 1974-06-14 |
| FR2016174A1 (xx) | 1970-05-08 |
| IL32582A (en) | 1973-05-31 |
| IL32582A0 (en) | 1969-09-25 |
| GB1280689A (en) | 1972-07-05 |
| SE359402B (xx) | 1973-08-27 |
| NL6912470A (xx) | 1970-02-24 |
| DE1939280A1 (de) | 1970-02-26 |
| RO59767A (xx) | 1976-06-15 |
| US3571673A (en) | 1971-03-23 |