BE593818A - Transistor de surface. - Google Patents
Transistor de surface.Info
- Publication number
- BE593818A BE593818A BE593818A BE593818A BE593818A BE 593818 A BE593818 A BE 593818A BE 593818 A BE593818 A BE 593818A BE 593818 A BE593818 A BE 593818A BE 593818 A BE593818 A BE 593818A
- Authority
- BE
- Belgium
- Prior art keywords
- surface transistor
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1959T0017044 DE1208012C2 (de) | 1959-08-06 | 1959-08-06 | Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen |
Publications (1)
Publication Number | Publication Date |
---|---|
BE593818A true BE593818A (fr) | 1960-12-01 |
Family
ID=37256553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE593818A BE593818A (fr) | 1959-08-06 | 1960-08-05 | Transistor de surface. |
Country Status (6)
Country | Link |
---|---|
US (1) | US3436618A (fr) |
BE (1) | BE593818A (fr) |
CH (1) | CH398798A (fr) |
DE (1) | DE1208012C2 (fr) |
FR (1) | FR1268679A (fr) |
GB (1) | GB961710A (fr) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL91725C (fr) * | 1952-12-16 | |||
DE1036393B (de) * | 1954-08-05 | 1958-08-14 | Siemens Ag | Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren |
NL107344C (fr) * | 1955-03-23 | |||
GB945742A (fr) * | 1959-02-06 | Texas Instruments Inc | ||
US2967793A (en) * | 1959-02-24 | 1961-01-10 | Westinghouse Electric Corp | Semiconductor devices with bi-polar injection characteristics |
US3083441A (en) * | 1959-04-13 | 1963-04-02 | Texas Instruments Inc | Method for fabricating transistors |
US3015048A (en) * | 1959-05-22 | 1961-12-26 | Fairchild Camera Instr Co | Negative resistance transistor |
NL251532A (fr) * | 1959-06-17 |
-
1959
- 1959-08-06 DE DE1959T0017044 patent/DE1208012C2/de not_active Expired
-
1960
- 1960-07-14 CH CH804560A patent/CH398798A/de unknown
- 1960-08-02 GB GB26728/60A patent/GB961710A/en not_active Expired
- 1960-08-05 BE BE593818A patent/BE593818A/fr unknown
- 1960-08-06 FR FR835206A patent/FR1268679A/fr not_active Expired
-
1966
- 1966-09-08 US US578099A patent/US3436618A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1208012C2 (de) | 1966-10-20 |
CH398798A (de) | 1966-03-15 |
DE1208012B (de) | 1965-12-30 |
GB961710A (en) | 1964-06-24 |
FR1268679A (fr) | 1961-08-04 |
US3436618A (en) | 1969-04-01 |
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