BE584466A - Dispositif traducteur à semi conducteur. - Google Patents
Dispositif traducteur à semi conducteur.Info
- Publication number
- BE584466A BE584466A BE584466A BE584466A BE584466A BE 584466 A BE584466 A BE 584466A BE 584466 A BE584466 A BE 584466A BE 584466 A BE584466 A BE 584466A BE 584466 A BE584466 A BE 584466A
- Authority
- BE
- Belgium
- Prior art keywords
- translator device
- semiconductor
- semiconductor translator
- translator
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US779593A US3061739A (en) | 1958-12-11 | 1958-12-11 | Multiple channel field effect semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
BE584466A true BE584466A (fr) | 1960-03-01 |
Family
ID=25116917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE584466A BE584466A (fr) | 1958-12-11 | 1959-11-09 | Dispositif traducteur à semi conducteur. |
Country Status (8)
Country | Link |
---|---|
US (1) | US3061739A (fr) |
BE (1) | BE584466A (fr) |
CH (1) | CH397868A (fr) |
DE (1) | DE1152185B (fr) |
ES (1) | ES253851A1 (fr) |
FR (1) | FR1242628A (fr) |
GB (1) | GB941368A (fr) |
NL (1) | NL245195A (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3210696A (en) * | 1961-02-10 | 1965-10-05 | Westinghouse Electric Corp | Bridged-t filter |
US3187606A (en) * | 1961-06-05 | 1965-06-08 | Burroughs Corp | Fabricating tool and technique |
US3192398A (en) * | 1961-07-31 | 1965-06-29 | Merck & Co Inc | Composite semiconductor delay line device |
US3122655A (en) * | 1961-12-27 | 1964-02-25 | James J Murray | Solid state reactive phase lagging device |
US3255360A (en) * | 1962-03-30 | 1966-06-07 | Research Corp | Field-effect negative resistor |
US3163916A (en) * | 1962-06-22 | 1965-01-05 | Int Rectifier Corp | Unijunction transistor device |
NL299194A (fr) * | 1962-10-15 | |||
NL299821A (fr) * | 1962-10-31 | 1900-01-01 | ||
US3173102A (en) * | 1962-12-06 | 1965-03-09 | Jr Walter Loewenstern | Solid state multiple stream travelling wave amplifier |
NL301883A (fr) * | 1962-12-17 | |||
US3149765A (en) * | 1963-05-28 | 1964-09-22 | Western Electric Co | Apparatus for removing waffrs from semiconductor slices |
US3169837A (en) * | 1963-07-31 | 1965-02-16 | Int Rectifier Corp | Method of dicing semiconductor wafers |
US3292129A (en) * | 1963-10-07 | 1966-12-13 | Grace W R & Co | Silicon thermistors |
US3343114A (en) * | 1963-12-30 | 1967-09-19 | Texas Instruments Inc | Temperature transducer |
US3340490A (en) * | 1965-10-21 | 1967-09-05 | Texas Instruments Inc | Thermistor |
US4364021A (en) * | 1977-10-07 | 1982-12-14 | General Electric Company | Low voltage varistor configuration |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL79529C (fr) * | 1948-09-24 | |||
NL154165C (fr) * | 1949-10-11 | |||
US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
US2717342A (en) * | 1952-10-28 | 1955-09-06 | Bell Telephone Labor Inc | Semiconductor translating devices |
US2816228A (en) * | 1953-05-21 | 1957-12-10 | Rca Corp | Semiconductor phase shift oscillator and device |
DE1039646B (de) * | 1953-10-19 | 1958-09-25 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen zwischen Zonen unterschiedlichen Leitungstyps |
BE552928A (fr) * | 1957-03-18 |
-
0
- NL NL245195D patent/NL245195A/xx unknown
-
1958
- 1958-12-11 US US779593A patent/US3061739A/en not_active Expired - Lifetime
-
1959
- 1959-11-09 BE BE584466A patent/BE584466A/fr unknown
- 1959-11-17 ES ES0253851A patent/ES253851A1/es not_active Expired
- 1959-11-26 DE DEW26788A patent/DE1152185B/de active Pending
- 1959-12-02 GB GB40899/59A patent/GB941368A/en not_active Expired
- 1959-12-08 FR FR812456A patent/FR1242628A/fr not_active Expired
- 1959-12-11 CH CH8173259A patent/CH397868A/fr unknown
Also Published As
Publication number | Publication date |
---|---|
GB941368A (en) | 1963-11-13 |
FR1242628A (fr) | 1960-09-30 |
DE1152185B (de) | 1963-08-01 |
CH397868A (fr) | 1965-08-31 |
US3061739A (en) | 1962-10-30 |
ES253851A1 (es) | 1960-03-01 |
NL245195A (fr) |
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