BE556951A - - Google Patents
Info
- Publication number
- BE556951A BE556951A BE556951DA BE556951A BE 556951 A BE556951 A BE 556951A BE 556951D A BE556951D A BE 556951DA BE 556951 A BE556951 A BE 556951A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/26—Circuits for superheterodyne receivers
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/04—Homogenisation by zone-levelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D5/00—Circuits for demodulating amplitude-modulated or angle-modulated oscillations at will
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
- H03J5/24—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection
- H03J5/242—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection used exclusively for band selection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Signal Processing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2991654A GB820611A (en) | 1954-10-18 | 1954-10-18 | Improvements in or relating to semi-conductor diodes |
GB12698/56A GB839842A (en) | 1954-10-18 | 1956-04-25 | Improvements in or relating to semi-conductor diodes |
Publications (1)
Publication Number | Publication Date |
---|---|
BE556951A true BE556951A (fr) |
Family
ID=26249205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE556951D BE556951A (fr) | 1954-10-18 |
Country Status (5)
Country | Link |
---|---|
US (1) | US2849664A (fr) |
BE (1) | BE556951A (fr) |
DE (1) | DE1011082B (fr) |
GB (1) | GB839842A (fr) |
NL (3) | NL110970C (fr) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3032695A (en) * | 1957-03-20 | 1962-05-01 | Bosch Gmbh Robert | Alloyed junction semiconductive device |
DE1093018B (de) * | 1957-08-03 | 1960-11-17 | Licentia Gmbh | Trockengleichrichterelement und aus mehreren dieser Trockengleichrichterelemente hergestellte Trockengleichrichtersaeule |
US2975342A (en) * | 1957-08-16 | 1961-03-14 | Research Corp | Narrow base planar junction punch-thru diode |
NL237225A (fr) * | 1958-03-19 | |||
US3109938A (en) * | 1958-03-19 | 1963-11-05 | Rauland Corp | Semi-conductor device having a gas-discharge type switching characteristic |
US3109221A (en) * | 1958-08-19 | 1963-11-05 | Clevite Corp | Semiconductor device |
US2992471A (en) * | 1958-11-04 | 1961-07-18 | Bell Telephone Labor Inc | Formation of p-n junctions in p-type semiconductors |
US3085310A (en) * | 1958-12-12 | 1963-04-16 | Ibm | Semiconductor device |
US3219890A (en) * | 1959-02-25 | 1965-11-23 | Transitron Electronic Corp | Semiconductor barrier-layer device and terminal structure thereon |
US3134159A (en) * | 1959-03-26 | 1964-05-26 | Sprague Electric Co | Method for producing an out-diffused graded-base transistor |
NL249774A (fr) * | 1959-03-26 | |||
NL113632C (fr) * | 1959-04-08 | |||
NL252855A (fr) * | 1959-06-23 | |||
US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
US3124862A (en) * | 1959-12-14 | 1964-03-17 | Alloy double-diffused semiconductor | |
DE1113519B (de) * | 1960-02-25 | 1961-09-07 | Bosch Gmbh Robert | Siliziumgleichrichter fuer hohe Stromstaerken |
DE1171537B (de) * | 1960-04-02 | 1964-06-04 | Telefunken Patent | Verfahren zur Herstellung einer Halbleiterdiode |
US3099776A (en) * | 1960-06-10 | 1963-07-30 | Texas Instruments Inc | Indium antimonide transistor |
US3186065A (en) * | 1960-06-10 | 1965-06-01 | Sylvania Electric Prod | Semiconductor device and method of manufacture |
DE1295089B (de) * | 1960-12-23 | 1969-05-14 | Philips Patentverwaltung | Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere eines Transistors |
DE1239778B (de) * | 1963-11-16 | 1967-05-03 | Siemens Ag | Schaltbares Halbleiterbauelement von pnpn-Typ |
NL6512513A (fr) * | 1964-12-01 | 1966-06-02 | ||
DE19531369A1 (de) * | 1995-08-25 | 1997-02-27 | Siemens Ag | Halbleiterbauelement auf Siliciumbasis mit hochsperrendem Randabschluß |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2646536A (en) * | 1946-11-14 | 1953-07-21 | Purdue Research Foundation | Rectifier |
BE511293A (fr) * | 1951-08-24 |
-
0
- NL NL216619D patent/NL216619A/xx unknown
- NL NL201235D patent/NL201235A/xx unknown
- NL NL110970D patent/NL110970C/xx active
- BE BE556951D patent/BE556951A/xx unknown
-
1955
- 1955-10-14 DE DEN11304A patent/DE1011082B/de active Pending
- 1955-10-17 US US540726A patent/US2849664A/en not_active Expired - Lifetime
-
1956
- 1956-04-25 GB GB12698/56A patent/GB839842A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL201235A (fr) | |
GB839842A (en) | 1960-06-29 |
DE1011082B (de) | 1957-06-27 |
NL216619A (fr) | |
US2849664A (en) | 1958-08-26 |
NL110970C (fr) |