BE523990A - - Google Patents

Info

Publication number
BE523990A
BE523990A BE523990DA BE523990A BE 523990 A BE523990 A BE 523990A BE 523990D A BE523990D A BE 523990DA BE 523990 A BE523990 A BE 523990A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE523990A publication Critical patent/BE523990A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34Dc amplifiers in which all stages are dc-coupled
    • H03F3/343Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
BE523990D 1952-11-05 BE523990A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL318329X 1952-11-05

Publications (1)

Publication Number Publication Date
BE523990A true BE523990A (en)

Family

ID=19783883

Family Applications (1)

Application Number Title Priority Date Filing Date
BE523990D BE523990A (en) 1952-11-05

Country Status (6)

Country Link
BE (1) BE523990A (en)
CH (1) CH318329A (en)
DE (1) DE969211C (en)
FR (1) FR1086214A (en)
GB (1) GB747695A (en)
NL (1) NL173581B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3162770A (en) * 1957-06-06 1964-12-22 Ibm Transistor structure

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1079212B (en) * 1958-06-30 1960-04-07 Siemens Ag Semiconductor arrangement with partially negative voltage characteristics, in particular switching diode
NL260007A (en) * 1960-01-14
US3160828A (en) * 1960-01-25 1964-12-08 Westinghouse Electric Corp Radiation sensitive semiconductor oscillating device
DE1207509B (en) * 1962-05-02 1965-12-23 Siemens Ag Controlled semiconductor current gate with several zones
GB1098979A (en) * 1965-07-03 1968-01-10 Marconi Co Ltd Improvements in or relating to high frequency transistor amplifiers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3162770A (en) * 1957-06-06 1964-12-22 Ibm Transistor structure

Also Published As

Publication number Publication date
NL173581B (en)
DE969211C (en) 1958-05-14
FR1086214A (en) 1955-02-10
CH318329A (en) 1956-12-31
GB747695A (en) 1956-04-11

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