AUPQ112199A0 - Epitaxial film - Google Patents

Epitaxial film

Info

Publication number
AUPQ112199A0
AUPQ112199A0 AUPQ1121A AUPQ112199A AUPQ112199A0 AU PQ112199 A0 AUPQ112199 A0 AU PQ112199A0 AU PQ1121 A AUPQ1121 A AU PQ1121A AU PQ112199 A AUPQ112199 A AU PQ112199A AU PQ112199 A0 AUPQ112199 A0 AU PQ112199A0
Authority
AU
Australia
Prior art keywords
epitaxial film
epitaxial
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AUPQ1121A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisearch Ltd
Original Assignee
Unisearch Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisearch Ltd filed Critical Unisearch Ltd
Priority to AUPQ1121A priority Critical patent/AUPQ112199A0/en
Publication of AUPQ112199A0 publication Critical patent/AUPQ112199A0/en
Priority to PCT/AU2000/000696 priority patent/WO2000079033A1/en
Priority to AU52023/00A priority patent/AU5202300A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
AUPQ1121A 1999-06-22 1999-06-22 Epitaxial film Abandoned AUPQ112199A0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AUPQ1121A AUPQ112199A0 (en) 1999-06-22 1999-06-22 Epitaxial film
PCT/AU2000/000696 WO2000079033A1 (en) 1999-06-22 2000-06-20 Epitaxial films
AU52023/00A AU5202300A (en) 1999-06-22 2000-06-20 Epitaxial films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPQ1121A AUPQ112199A0 (en) 1999-06-22 1999-06-22 Epitaxial film

Publications (1)

Publication Number Publication Date
AUPQ112199A0 true AUPQ112199A0 (en) 1999-07-15

Family

ID=3815311

Family Applications (1)

Application Number Title Priority Date Filing Date
AUPQ1121A Abandoned AUPQ112199A0 (en) 1999-06-22 1999-06-22 Epitaxial film

Country Status (2)

Country Link
AU (1) AUPQ112199A0 (en)
WO (1) WO2000079033A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7080528B2 (en) 2002-10-23 2006-07-25 Applied Materials, Inc. Method of forming a phosphorus doped optical core using a PECVD process
CN100418201C (en) * 2005-08-05 2008-09-10 中国科学院长春光学精密机械与物理研究所 Production of thin-magnetic semiconductor epitaxial-thin-film of iron-doped cadmium sulfide
CN111593410A (en) * 2020-05-28 2020-08-28 泰州市爱特斯光学材料有限公司 Preparation method of zinc sulfide crystal for infrared monitoring

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2055948C1 (en) * 1992-12-14 1996-03-10 Институт неорганической химии СО РАН Cadmium sulfide film production method
JP3681870B2 (en) * 1997-09-05 2005-08-10 松下電池工業株式会社 Method for producing compound semiconductor film and solar cell

Also Published As

Publication number Publication date
WO2000079033A1 (en) 2000-12-28

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