AU765894B2 - Methods of fabricating etched structures - Google Patents
Methods of fabricating etched structures Download PDFInfo
- Publication number
- AU765894B2 AU765894B2 AU24503/00A AU2450300A AU765894B2 AU 765894 B2 AU765894 B2 AU 765894B2 AU 24503/00 A AU24503/00 A AU 24503/00A AU 2450300 A AU2450300 A AU 2450300A AU 765894 B2 AU765894 B2 AU 765894B2
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- Australia
- Prior art keywords
- layer
- mask
- sacrificial
- target material
- mask layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 65
- 239000013077 target material Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 14
- 229920000642 polymer Polymers 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims 3
- 239000002861 polymer material Substances 0.000 claims 2
- 235000009917 Crataegus X brevipes Nutrition 0.000 claims 1
- 235000013204 Crataegus X haemacarpa Nutrition 0.000 claims 1
- 235000009685 Crataegus X maligna Nutrition 0.000 claims 1
- 235000009444 Crataegus X rubrocarnea Nutrition 0.000 claims 1
- 235000009486 Crataegus bullatus Nutrition 0.000 claims 1
- 235000017181 Crataegus chrysocarpa Nutrition 0.000 claims 1
- 235000009682 Crataegus limnophila Nutrition 0.000 claims 1
- 235000004423 Crataegus monogyna Nutrition 0.000 claims 1
- 240000000171 Crataegus monogyna Species 0.000 claims 1
- 235000002313 Crataegus paludosa Nutrition 0.000 claims 1
- 235000009840 Crataegus x incaedua Nutrition 0.000 claims 1
- 230000000873 masking effect Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 11
- 230000008021 deposition Effects 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- -1 dielectric Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
WO 00/48236 PCT/GBOO/00423 -1- METHODS OF FABRICATING ETCHED STRUCTURES The present invention relates to methods of fabricating etched structures. The invention is particularly suited to the fabrication of semiconductor devices and optical devices formed by etching target materials carried by substrate layers.
BACKGROUND OF THE INVENTION The success of producing optical devices for use in optical signal processing is very much dependent upon the method used for the fabrication of those devices.
Such devices include star-couplers, commonly used in fabrication of Y-branch splitters and combiners, and transmission and reflection gratings. These devices are particularly affected by the resolution of the definition of vertices produced by existing mask and etch techniques usually used for their manufacture. Due to non-perfect mask quality and the limited resolution of the photolithographic process, blunted vertices often result in a reduction in performance of the resulting component.
One example of such a device, a WDM (wavelength division multiplexed) optical signal demultiplexer, makes use of grating elements 10 of the type shown in Figure 1. An incident wavefront 3 is split into multiple sections and a constant phase delay added to each section upon reflection by each transmission grating element 10. Each section of the wavefront emerges from the grating and interferes with the other section to produce an interference pattern in the far field 5. The pattern consists of a series of peaks and troughs corresponding to where constructive and destructive interference occur respectively. As such WO 00/48236 PCT/GBOO/00423 -2this component can be used to spatially separate a wavelength division multiplexed signal. The component separates each wavelength such that it can be detected independently of the others.
The performance of such a component is dependent upon many factors such as material absorption, birefringence and dispersion. However, the quality of the definition of the grating elements 10 is also of paramount importance. Imperfect grating element formation such as rounding of the element facet vertices results in reduced grating performance. As can be seen from Figure 2, corner rounding due to the limited resolution of the mask and the photolithographic process leads to a grating element that has an effective reflective facet length 20 which is less than the designed nominal length 18. The rounding of the corners results in scattering and loss of light into the device material.
In addition, the reduction of the facet length results in a variation of the amplitude of the diffracted gaussian field as illustrated in Figure 3. The result of this upon the image 5 in the far field of the device is a transfer of power out of the main mode into higher order interference modes, resulting in a reduction in the diffractive performance of the component.
A previously-considered method for improving this situation uses a double mask technique. Such previous methods have concentrated upon the fabrication of Yjunctions utilising dielectric masking layers to allow definition of two overlaid masking layers. However, in these double mask techniques, alternative masking materials such as dielectric, metal or InP etch stop layers must be used. These layers themselves require deposition, etch and removal, which may degrade the 3 target material. In addition, using the previous double mask technique, the number of processing steps is increased, and accurate overlaying of the masks can be difficult to achieve.
Previous reports of u sing the double mask technique have concentrated upon the use of SiO2 and InP etch stop mask layers to achieve the two separate masking layers required to define a Y junction. For example, see Y. Shani et al., "Buried Rib Passive Waveguide Y Junctions with Sharp Vertex on InP", IEEE Phot. Tech Lett., 210-212, (1991), and J.J.G.M. van der Tol et al., "Sharp Vertices in Asymmetric Y-Junctions by Double Masking", IEEE Phot. Tech Lett., 249-251, (1994).
Accordingly, it is desirable to provide an improved fabrication technique that can overcome or limit the aforementioned disadvantages of the prior methods.
Any discussion of documents, devices, acts or knowledge in this specification is included to explain the context of the invention. It should not be taken as an admission that any of the material formed part of the prior art base or the common general knowledge in the relevant art in Australia on or before the priority date of the claims herein.
SUMMARY OF THE PRESENT INVENTION 20 According to the present invention, there is provided a method of fabricating an etched structure in a target material, the method including forming a first mask layer on the target material, the first mask layer 0 defining a first predetermined pattern of exposed material; depositing a sacrificial layer over the first mask layer and exposed material, wherein the sacrificial layer is an ultra thin layer; forming a second mask layer on the sacrificial layer, the second mask layer defining a second predetermined pattern of exposed material; and *etching the sacrificial and target material to form an etched structure in the target material defined by the combination of the first and second predetermined S 30 patterns.
."The term "comprises", and grammatical variations thereof such as "comprising" when used in the description and claims does not preclude the presence of additional features, integers, steps or components; or groups thereof.
WO 00/48236 PCT/GBOO/00423 -4- BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 illustrates an optical device; Figures 2 and 3 illustrate the effects of non-perfect fabrication of the device of Figure 1; Figure 4 shows another optical device; Figure 5 illustrates steps in a fabrication method embodying the present invention; Figure 6 is a scanning electron microscope image of part of the optical device of Figure 4 fabricated using a previously considered single mask technique; Figure 7 is a scanning electron microscope image of part of the optical device of Figure 4 fabricated using a multi-mask technique embodying the present invention; and Figure 8 illustrates another method embodying the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS A method embodying the present invention of fabricating an optical device will now be described in relation to the manufacture of a double grating device suitable for use in a wavelength division multiplexed optical signal transmission system. The device is itself the subject of a co-pending patent application. This device is purely exemplary, since the technique is applicable to the manufacture of optical or electronic device etched into a material.
The exemplary device is shown in plan in Figure 4, and it can be seen that at least some of the performance of the device is dependent upon the resolution of the definition of the outer vertices of the elements, as discussed above.
A method of fabricating the device of Figure 4 is shown WO 00/48236 PCT/GBOO/00423 in Figures 5 to A plan view of the device at each step in the process, together with a crosssectional view of the structure as viewed from perspective AA. The device is formed in a layer of target material 21 which is carried by a substrate For the exemplary optical device, the target layer is a polymer layer, and the substrate could be silicon.
The target material 21 is spin coated with a thin layer 22 of silicone based photoresist (SBPR) and a primary window is defined by standard photolithography, thereby to produce a first mask layer 22. Silicone based photoresist is chosen for the masking layer 22 since it is resistant to reactive ion etch with oxygen plasma.
An ultra-thin sacrificial polymer layer 23 is spin coated over the first mask layer 22 and thermally cured.
A second layer 24 of SBPR is spin coated onto the structure and a second etch window is define by standard photolithography, thereby forming a second mask layer 24. The second mask layer 24 is aligned with the first mask layer so as to provide an overall mask structure.
The method of transfer of the pattern into the target material layer 21 is dependent on the material being processed. In this example of optical device, a polymer target layer 21 is used, and so the sample is etched in a oxygen plasma. The removal of the exposed sacrificial polymer layer 23 can then be achieved automatically during the target layer etch process.
WO 00/48236 PCT/GBOO/00423 -6- For alternative target layer materials, a short oxygen plasma etch would be carried out to open up all the etch windows through to the target layer 21, before a suitable etch process for the target material is undertaken. Upon completion of the etch the mask layers 22 and 23 (SBPR) can be removed, if required, in a suitable solvent.
Use of this spin-on oxygen plasma resistant SBPR in conjunction with an interleaved sacrificial polymer layer can be seen to offer advantages over previously considered methods of using a double mask technique.
Use of metallic, dielectric InP or etch stop masking layers require additional process steps in deposition via evaporation, sputtering, thermal deposition or regrowth in addition to the pattern formation via etch and subsequent removal of the masking layer. By using a method according to the present invention, the elimination of the need to perform such steps can minimise possible damage to the target material.
In addition, the use of an ultra thin SBPR layer also allows for an improvement in the resolution obtained in the patterned etches over that obtained with metal masks using processes such as lift-off.
More importantly alignment of masking layers with respect to one another is simplified by the thin nature of the layers and their transparency to visible light.
Indeed use of an ultra thin polymer layer 23 interleaved between the masking layers 22 and 24 enables good observation of the overall mask structure.
The interleaved polymer layer 23 also acts as a protective coat to underlying mask layers and allows deposition of additional mask layers upon it's surface without interaction between mask layers.
WO 00/48236 PCT/GBOO/00423 -7- Using a combination of oxygen plasma resistant SBPR and interleaved polymer layers that can be etched by oxygen plasma allows multiple masking layers to be built up simply and once complete an oxygen plasma etch can be used to remove all exposed sacrificial polymer to reveal underlying SBPR etch windows. The component can then be etched in a suitable manner using the overlaid combination of SBPR etch windows.
It will be readily appreciated that the method embodying the present invention is applicable to semiconductor devices, and also to etch patterns that requires the use of more than two mask layers. The example described above has been limited to the use of two mask layers, for clarity. If more mask layers are required, then additional thin polymer layers and the mask layers themselves are added to the structure.
Figures 6a to 6d show scanning electron microscope (SEM) images of grating elements fabricated by a known single mask technique. As may be seen a combination of limited mask quality and limited resolution of the photolithographic process has resulted in a non-perfect double grating element. The two halves of the grating element should join and the end vertices should ideally be well defined and suffer from little or no rounding. Such corner rounding may be estimated to be of the order of 3-4micron, which results in an error in the subsequent facet length of approximately Comparing those results with the results of a method embodying the present invention, as shown in Figures 7a to 7d, it can be seen that the grating elements fabricated using the method of the invention has well defined vertices 40 and is completely formed (41).
WO 00/48236 PCT/GBOO/00423 -8- It will be readily appreciated that utilisation of this method overcomes the limit upon the mask quality since the single mask method uses masks that are unable to define the joining of the grating elements, in contrast with the method of the invention.
To enable this method to be used in other process conditions, it would be possible to use a metallic mask layer 52 upon the surface of the target material layer 51, as illustrated in figure S. This metallic layer 52 might be evaporated or sputtered onto the target material layer 51 before the multi-masking layers 53, 54 and 55 are built up as previously described. The final highly defined pattern may be created as normal and the final pattern then transferred into the primary metallic layer using a suitable etch process. The deposition of a reflective metallic masking layer upon the surface of the target offers two advantages.
Firstly it allows the pattern to be defined in a suitable etch resistant material for differing etch processes thus allowing use with a wider range of target materials and etch process steps.
Secondly where the target material is relatively thick and transparent to visible light there may be a reduction in the quality of a mask image that might be resolved with a microscope due to interference effects within the transparent layer structure. This would make accurate alignment of masking layers more difficult.
The deposition of a reflective layer onto the target material prevents light entering the target material when imaging the masks for alignment and as such eliminates the interference effects that give rise to poorly resolved images. As such the metallic layer allows accurate alignment of masking layers on a target WO 00/48236 PCT/GB00/00423 -9material that is both thick and transparent to visible light.
Methods embodying the present invention can provide a simplified fabrication technique for the fabrication of highly defined vertices in etched structures and devices. Such a method involves fewer process steps than current methods and allows multi-mask definition with minimal effect upon the target material. The optional use of a metallic masking layer enables use of this method with a wide variety of target materials and processes, in addition to affording improved imaging where the target material is both thick and transparent.
Claims (14)
1. A method of fabricating an etched structure in a target material, the method including forming a first mask layer on the target material, the first mask layer defining a first predetermined pattern of exposed material; depositing a sacrificial layer over the first mask layer and exposed material, wherein the sacrificial layer is an ultra thin layer; forming a second mask layer on the sacrificial layer, the second mask layer defining a second predetermined pattern of exposed material; and etching the sacrificial and target material to form an etched structure in the target material defined by the combination of the first and second predetermined patterns.
2. A method as claimed in claim 1, wherein the first mask layer is formed by spin coating a layer of mask material onto the target material, and defining etch windows in the layer of mask material by photolithography.
3. A method as claimed in claim 1 or 2, wherein the second mask layer is **formed by spin coating a layer of mask material onto the target and sacrificial material, and defining etch windows in the layer of mask material by photolithography. 20
4. A method as claimed in claim 1, 2 or 3, wherein the target material is a polymer material.
A method as claimed in any one of claims 1 to 4, wherein the sacrificial material is a polymer material. 0
6. A method as claimed in any one of claims 1 to 4, wherein each mask layer 25 is provided by a layer of photoresist material, the first and second predetermined o patterns being formed by a photolithographic technique. 11
7. A method as claimed in claim 6 wherein the first and second mask layers include a silicone based polymer photo resist.
8. A method as claimed in claim 1, wherein the first mask layer, the sacrificial layer and the second mask layer are each deposited by spin coating.
9. A method as claimed in claim 1, wherein the step of etching includes an oxygen based reactive ion etch.
A method as claimed in any one of claims 1 to 4, wherein the etched structure defines at least part of an optical signal processing device.
11. A method as claimed in claim 1, wherein a metallic layer is formed upon the surface of the target material and the first mask layer is formed on the metallic layer.
12. A method as claimed i n claim 11, wherein the etching of the target a nd sacrificial material includes: etching the metallic layer to produce a metallic mask layer, and etching the target material to form the etched structure therein.
13. A method as claimed in claim 12, wherein the target material is silicone. S.
14. A method of fabricating an etched structure in a target material, substantially as hereinbefore described with reference to the accompanying drawings. DATED this 6th day of August 2003 UNIVERSITY OF BRISTOL WATERMARK PATENT TRADE MARK ATTORNEYS 290 BURWOOD ROAD HAWTHORN VICTORIA 3122 AUSTRALIA P20214AU00 PNF/MAS/RES
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9903110.6A GB9903110D0 (en) | 1999-02-11 | 1999-02-11 | Method of fabricating etched structures |
| GB9903110 | 1999-02-11 | ||
| PCT/GB2000/000423 WO2000048236A1 (en) | 1999-02-11 | 2000-02-10 | Methods of fabricating etched structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU2450300A AU2450300A (en) | 2000-08-29 |
| AU765894B2 true AU765894B2 (en) | 2003-10-02 |
Family
ID=10847566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU24503/00A Ceased AU765894B2 (en) | 1999-02-11 | 2000-02-10 | Methods of fabricating etched structures |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1155440A1 (en) |
| AU (1) | AU765894B2 (en) |
| CA (1) | CA2367064A1 (en) |
| GB (1) | GB9903110D0 (en) |
| WO (1) | WO2000048236A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7276453B2 (en) | 2004-08-10 | 2007-10-02 | E.I. Du Pont De Nemours And Company | Methods for forming an undercut region and electronic devices incorporating the same |
| US7166860B2 (en) | 2004-12-30 | 2007-01-23 | E. I. Du Pont De Nemours And Company | Electronic device and process for forming same |
| US20220301853A1 (en) * | 2019-07-03 | 2022-09-22 | Lam Research Corporation | Method for etching features using a targeted deposition for selective passivation |
| CN117790300B (en) * | 2024-02-23 | 2024-04-30 | 深圳市常丰激光刀模有限公司 | Dynamic etching compensation method for fine circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0435187A2 (en) * | 1989-12-26 | 1991-07-03 | Fujitsu Limited | Method of fabricating a semiconductor device |
| JPH03263834A (en) * | 1990-03-14 | 1991-11-25 | Matsushita Electron Corp | Manufacture of semiconductor device |
| US5736457A (en) * | 1994-12-09 | 1998-04-07 | Sematech | Method of making a damascene metallization |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4201800A (en) * | 1978-04-28 | 1980-05-06 | International Business Machines Corp. | Hardened photoresist master image mask process |
| US5091290A (en) * | 1990-12-03 | 1992-02-25 | Micron Technology, Inc. | Process for promoting adhesion of a layer of photoresist on a substrate having a previous layer of photoresist |
-
1999
- 1999-02-11 GB GBGB9903110.6A patent/GB9903110D0/en not_active Ceased
-
2000
- 2000-02-10 WO PCT/GB2000/000423 patent/WO2000048236A1/en not_active Application Discontinuation
- 2000-02-10 CA CA002367064A patent/CA2367064A1/en not_active Abandoned
- 2000-02-10 EP EP00902762A patent/EP1155440A1/en not_active Withdrawn
- 2000-02-10 AU AU24503/00A patent/AU765894B2/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0435187A2 (en) * | 1989-12-26 | 1991-07-03 | Fujitsu Limited | Method of fabricating a semiconductor device |
| JPH03263834A (en) * | 1990-03-14 | 1991-11-25 | Matsushita Electron Corp | Manufacture of semiconductor device |
| US5736457A (en) * | 1994-12-09 | 1998-04-07 | Sematech | Method of making a damascene metallization |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1155440A1 (en) | 2001-11-21 |
| AU2450300A (en) | 2000-08-29 |
| GB9903110D0 (en) | 1999-04-07 |
| CA2367064A1 (en) | 2000-08-17 |
| WO2000048236A1 (en) | 2000-08-17 |
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| Date | Code | Title | Description |
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| FGA | Letters patent sealed or granted (standard patent) |