AU6884600A - Method to fabricate a mosfet - Google Patents
Method to fabricate a mosfetInfo
- Publication number
- AU6884600A AU6884600A AU68846/00A AU6884600A AU6884600A AU 6884600 A AU6884600 A AU 6884600A AU 68846/00 A AU68846/00 A AU 68846/00A AU 6884600 A AU6884600 A AU 6884600A AU 6884600 A AU6884600 A AU 6884600A
- Authority
- AU
- Australia
- Prior art keywords
- mosfet
- fabricate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9903081A SE517452C2 (en) | 1999-09-01 | 1999-09-01 | Metal oxide semiconductor device and method for its manufacture |
SE9903081 | 1999-09-01 | ||
PCT/SE2000/001607 WO2001017009A1 (en) | 1999-09-01 | 2000-08-23 | Method to fabricate a mosfet |
Publications (1)
Publication Number | Publication Date |
---|---|
AU6884600A true AU6884600A (en) | 2001-03-26 |
Family
ID=20416816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU68846/00A Abandoned AU6884600A (en) | 1999-09-01 | 2000-08-23 | Method to fabricate a mosfet |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP1214738A1 (en) |
JP (1) | JP2003508910A (en) |
KR (1) | KR20020027615A (en) |
CN (1) | CN1206710C (en) |
AU (1) | AU6884600A (en) |
CA (1) | CA2384004A1 (en) |
HK (1) | HK1052253B (en) |
SE (1) | SE517452C2 (en) |
TW (1) | TW447132B (en) |
WO (1) | WO2001017009A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101456454B1 (en) | 2008-06-25 | 2014-11-03 | 주성엔지니어링(주) | Semiconductor device and method of manufacturing the same |
CN101789401B (en) * | 2009-01-23 | 2011-10-05 | 中芯国际集成电路制造(上海)有限公司 | CMOS (Complementary Metal-Oxide-Semiconductor Transistor) and manufacture method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5911114A (en) * | 1997-03-21 | 1999-06-08 | National Semiconductor Corporation | Method of simultaneous formation of salicide and local interconnects in an integrated circuit structure |
US5897348A (en) * | 1998-03-13 | 1999-04-27 | Texas Instruments - Acer Incorporated | Low mask count self-aligned silicided CMOS transistors with a high electrostatic discharge resistance |
-
1999
- 1999-09-01 SE SE9903081A patent/SE517452C2/en not_active IP Right Cessation
- 1999-09-10 TW TW088115648A patent/TW447132B/en active
-
2000
- 2000-08-23 CN CNB008152098A patent/CN1206710C/en not_active Expired - Fee Related
- 2000-08-23 AU AU68846/00A patent/AU6884600A/en not_active Abandoned
- 2000-08-23 EP EP00957193A patent/EP1214738A1/en not_active Withdrawn
- 2000-08-23 WO PCT/SE2000/001607 patent/WO2001017009A1/en active IP Right Grant
- 2000-08-23 JP JP2001520458A patent/JP2003508910A/en not_active Withdrawn
- 2000-08-23 KR KR1020027002778A patent/KR20020027615A/en active IP Right Grant
- 2000-08-23 CA CA002384004A patent/CA2384004A1/en not_active Abandoned
-
2003
- 2003-06-20 HK HK03104456.6A patent/HK1052253B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20020027615A (en) | 2002-04-13 |
SE9903081D0 (en) | 1999-09-01 |
CN1206710C (en) | 2005-06-15 |
CN1387677A (en) | 2002-12-25 |
HK1052253A1 (en) | 2003-09-05 |
SE517452C2 (en) | 2002-06-04 |
TW447132B (en) | 2001-07-21 |
HK1052253B (en) | 2006-01-27 |
EP1214738A1 (en) | 2002-06-19 |
SE9903081L (en) | 2001-03-02 |
CA2384004A1 (en) | 2001-03-08 |
WO2001017009A1 (en) | 2001-03-08 |
JP2003508910A (en) | 2003-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |