AU6768698A - Semiconductor device with ferroelectric capacitor dielectric and method for making - Google Patents
Semiconductor device with ferroelectric capacitor dielectric and method for makingInfo
- Publication number
- AU6768698A AU6768698A AU67686/98A AU6768698A AU6768698A AU 6768698 A AU6768698 A AU 6768698A AU 67686/98 A AU67686/98 A AU 67686/98A AU 6768698 A AU6768698 A AU 6768698A AU 6768698 A AU6768698 A AU 6768698A
- Authority
- AU
- Australia
- Prior art keywords
- making
- semiconductor device
- ferroelectric capacitor
- capacitor dielectric
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98043097A | 1997-11-28 | 1997-11-28 | |
| US08980430 | 1997-11-28 | ||
| PCT/US1998/005634 WO1999028972A1 (en) | 1997-11-28 | 1998-03-20 | Semiconductor device with ferroelectric capacitor dielectric and method for making |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU6768698A true AU6768698A (en) | 1999-06-16 |
Family
ID=25527549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU67686/98A Abandoned AU6768698A (en) | 1997-11-28 | 1998-03-20 | Semiconductor device with ferroelectric capacitor dielectric and method for making |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU6768698A (en) |
| WO (1) | WO1999028972A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10114406A1 (en) | 2001-03-23 | 2002-10-02 | Infineon Technologies Ag | Process for the production of ferroelectric memory cells |
| DE60140757D1 (en) * | 2001-12-28 | 2010-01-21 | St Microelectronics Srl | Capacitor for integrated semiconductor devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555514A (en) * | 1991-08-28 | 1993-03-05 | Hitachi Ltd | Semiconductor device and fabrication thereof |
| US5614018A (en) * | 1991-12-13 | 1997-03-25 | Symetrix Corporation | Integrated circuit capacitors and process for making the same |
| US5499207A (en) * | 1993-08-06 | 1996-03-12 | Hitachi, Ltd. | Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same |
| US5489548A (en) * | 1994-08-01 | 1996-02-06 | Texas Instruments Incorporated | Method of forming high-dielectric-constant material electrodes comprising sidewall spacers |
-
1998
- 1998-03-20 WO PCT/US1998/005634 patent/WO1999028972A1/en active Application Filing
- 1998-03-20 AU AU67686/98A patent/AU6768698A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999028972A1 (en) | 1999-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |