AU6736000A - Ultraviolet-ray detecting device - Google Patents
Ultraviolet-ray detecting deviceInfo
- Publication number
- AU6736000A AU6736000A AU67360/00A AU6736000A AU6736000A AU 6736000 A AU6736000 A AU 6736000A AU 67360/00 A AU67360/00 A AU 67360/00A AU 6736000 A AU6736000 A AU 6736000A AU 6736000 A AU6736000 A AU 6736000A
- Authority
- AU
- Australia
- Prior art keywords
- ultraviolet
- detecting device
- ray detecting
- ray
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR9934791 | 1999-08-21 | ||
KR1019990034791A KR20000030069A (en) | 1999-08-21 | 1999-08-21 | UV detector |
PCT/KR2000/000933 WO2001015241A1 (en) | 1999-08-21 | 2000-08-21 | Ultraviolet-ray detecting device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU6736000A true AU6736000A (en) | 2001-03-19 |
Family
ID=19608175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU67360/00A Abandoned AU6736000A (en) | 1999-08-21 | 2000-08-21 | Ultraviolet-ray detecting device |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR20000030069A (en) |
AU (1) | AU6736000A (en) |
WO (1) | WO2001015241A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4545973B2 (en) | 2001-03-23 | 2010-09-15 | 富士通株式会社 | Silicon-based composition, low dielectric constant film, semiconductor device, and method of manufacturing low dielectric constant film |
KR100642161B1 (en) * | 2004-07-23 | 2006-11-03 | (주)제니컴 | Schottky type ultraviolet rays sensor and its method of making |
KR101236811B1 (en) * | 2006-03-10 | 2013-02-25 | 페어차일드코리아반도체 주식회사 | GaN SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
JP5183913B2 (en) * | 2006-11-24 | 2013-04-17 | 住友電工デバイス・イノベーション株式会社 | Manufacturing method of semiconductor device |
WO2010110475A1 (en) * | 2009-03-27 | 2010-09-30 | 独立行政法人物質・材料研究機構 | Shot key-type junction element and photoelectric conversion element and solar cell using the same |
DE102009030045B3 (en) * | 2009-06-22 | 2011-01-05 | Universität Leipzig | Transparent rectifying metal-metal oxide semiconductor contact structure and methods of making and using same |
CN114823982B (en) * | 2022-05-12 | 2024-03-19 | 深圳大学 | Preparation method of GaN-GaON ultraviolet-deep ultraviolet broadband detector |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4614961A (en) * | 1984-10-09 | 1986-09-30 | Honeywell Inc. | Tunable cut-off UV detector based on the aluminum gallium nitride material system |
JPS6220382A (en) * | 1985-07-18 | 1987-01-28 | Fujitsu Ltd | Optical semiconductor device |
US4811069A (en) * | 1987-02-23 | 1989-03-07 | Oki Electric Industry Co., Ltd. | Photoelectric conversion device |
JP3140751B2 (en) * | 1988-09-16 | 2001-03-05 | 豊田合成株式会社 | Gallium nitride based compound semiconductor light emitting device |
US5278435A (en) * | 1992-06-08 | 1994-01-11 | Apa Optics, Inc. | High responsivity ultraviolet gallium nitride detector |
JP2860027B2 (en) * | 1992-11-26 | 1999-02-24 | 株式会社フジクラ | Manufacturing method of ultraviolet detector |
-
1999
- 1999-08-21 KR KR1019990034791A patent/KR20000030069A/en active Search and Examination
-
2000
- 2000-08-21 AU AU67360/00A patent/AU6736000A/en not_active Abandoned
- 2000-08-21 WO PCT/KR2000/000933 patent/WO2001015241A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2001015241A1 (en) | 2001-03-01 |
KR20000030069A (en) | 2000-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |