AU6736000A - Ultraviolet-ray detecting device - Google Patents

Ultraviolet-ray detecting device

Info

Publication number
AU6736000A
AU6736000A AU67360/00A AU6736000A AU6736000A AU 6736000 A AU6736000 A AU 6736000A AU 67360/00 A AU67360/00 A AU 67360/00A AU 6736000 A AU6736000 A AU 6736000A AU 6736000 A AU6736000 A AU 6736000A
Authority
AU
Australia
Prior art keywords
ultraviolet
detecting device
ray detecting
ray
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU67360/00A
Inventor
Ji-Bom Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MAT SCIENCE TECH Co Ltd
Original Assignee
MAT SCIENCE TECH CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MAT SCIENCE TECH CO Ltd filed Critical MAT SCIENCE TECH CO Ltd
Publication of AU6736000A publication Critical patent/AU6736000A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
AU67360/00A 1999-08-21 2000-08-21 Ultraviolet-ray detecting device Abandoned AU6736000A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR9934791 1999-08-21
KR1019990034791A KR20000030069A (en) 1999-08-21 1999-08-21 UV detector
PCT/KR2000/000933 WO2001015241A1 (en) 1999-08-21 2000-08-21 Ultraviolet-ray detecting device

Publications (1)

Publication Number Publication Date
AU6736000A true AU6736000A (en) 2001-03-19

Family

ID=19608175

Family Applications (1)

Application Number Title Priority Date Filing Date
AU67360/00A Abandoned AU6736000A (en) 1999-08-21 2000-08-21 Ultraviolet-ray detecting device

Country Status (3)

Country Link
KR (1) KR20000030069A (en)
AU (1) AU6736000A (en)
WO (1) WO2001015241A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4545973B2 (en) 2001-03-23 2010-09-15 富士通株式会社 Silicon-based composition, low dielectric constant film, semiconductor device, and method of manufacturing low dielectric constant film
KR100642161B1 (en) * 2004-07-23 2006-11-03 (주)제니컴 Schottky type ultraviolet rays sensor and its method of making
KR101236811B1 (en) * 2006-03-10 2013-02-25 페어차일드코리아반도체 주식회사 GaN SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
JP5183913B2 (en) * 2006-11-24 2013-04-17 住友電工デバイス・イノベーション株式会社 Manufacturing method of semiconductor device
WO2010110475A1 (en) * 2009-03-27 2010-09-30 独立行政法人物質・材料研究機構 Shot key-type junction element and photoelectric conversion element and solar cell using the same
DE102009030045B3 (en) * 2009-06-22 2011-01-05 Universität Leipzig Transparent rectifying metal-metal oxide semiconductor contact structure and methods of making and using same
CN114823982B (en) * 2022-05-12 2024-03-19 深圳大学 Preparation method of GaN-GaON ultraviolet-deep ultraviolet broadband detector

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614961A (en) * 1984-10-09 1986-09-30 Honeywell Inc. Tunable cut-off UV detector based on the aluminum gallium nitride material system
JPS6220382A (en) * 1985-07-18 1987-01-28 Fujitsu Ltd Optical semiconductor device
US4811069A (en) * 1987-02-23 1989-03-07 Oki Electric Industry Co., Ltd. Photoelectric conversion device
JP3140751B2 (en) * 1988-09-16 2001-03-05 豊田合成株式会社 Gallium nitride based compound semiconductor light emitting device
US5278435A (en) * 1992-06-08 1994-01-11 Apa Optics, Inc. High responsivity ultraviolet gallium nitride detector
JP2860027B2 (en) * 1992-11-26 1999-02-24 株式会社フジクラ Manufacturing method of ultraviolet detector

Also Published As

Publication number Publication date
WO2001015241A1 (en) 2001-03-01
KR20000030069A (en) 2000-06-05

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase