AU6046600A - Reflective layer buried in silicon and method of fabrication - Google Patents

Reflective layer buried in silicon and method of fabrication

Info

Publication number
AU6046600A
AU6046600A AU60466/00A AU6046600A AU6046600A AU 6046600 A AU6046600 A AU 6046600A AU 60466/00 A AU60466/00 A AU 60466/00A AU 6046600 A AU6046600 A AU 6046600A AU 6046600 A AU6046600 A AU 6046600A
Authority
AU
Australia
Prior art keywords
fabrication
silicon
reflective layer
layer buried
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU60466/00A
Inventor
Matthew K. Emsley
M. Selim Unlu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boston University
Original Assignee
Boston University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boston University filed Critical Boston University
Publication of AU6046600A publication Critical patent/AU6046600A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)
AU60466/00A 1999-05-06 2000-05-05 Reflective layer buried in silicon and method of fabrication Abandoned AU6046600A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13285499P 1999-05-06 1999-05-06
US60132854 1999-05-06
PCT/US2000/012287 WO2000067891A2 (en) 1999-05-06 2000-05-05 Reflective layer buried in silicon and method of fabrication

Publications (1)

Publication Number Publication Date
AU6046600A true AU6046600A (en) 2000-11-21

Family

ID=22455901

Family Applications (1)

Application Number Title Priority Date Filing Date
AU60466/00A Abandoned AU6046600A (en) 1999-05-06 2000-05-05 Reflective layer buried in silicon and method of fabrication

Country Status (3)

Country Link
EP (1) EP1226612A4 (en)
AU (1) AU6046600A (en)
WO (1) WO2000067891A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501303B2 (en) * 2001-11-05 2009-03-10 The Trustees Of Boston University Reflective layer buried in silicon and method of fabrication
DE102005013640A1 (en) * 2005-03-24 2006-10-05 Atmel Germany Gmbh Semiconductor photodetector and method of making the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (en) * 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
US5227648A (en) * 1991-12-03 1993-07-13 Woo Jong Chun Resonance cavity photodiode array resolving wavelength and spectrum
US5389797A (en) * 1993-02-24 1995-02-14 The United States Of America As Represented By The Secretary Of The Department Of Energy Photodetector with absorbing region having resonant periodic absorption between reflectors
US5315128A (en) * 1993-04-30 1994-05-24 At&T Bell Laboratories Photodetector with a resonant cavity
GB9511336D0 (en) 1995-06-05 1995-08-02 Secr Defence Reflecting semiconductor substrates
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
US5877509A (en) * 1997-11-14 1999-03-02 Stanford University Quantum well exciton-polariton light emitting diode

Also Published As

Publication number Publication date
WO2000067891A3 (en) 2002-05-23
WO2000067891A9 (en) 2002-04-18
WO2000067891A2 (en) 2000-11-16
EP1226612A4 (en) 2007-01-24
EP1226612A2 (en) 2002-07-31

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase