AU5587500A - Inverter made of complementary LTiGTpLT/iGT and LTiGTnLT/iGT channel transistorsusing a single directly-deposited microcrystalline silicon film - Google Patents

Inverter made of complementary LTiGTpLT/iGT and LTiGTnLT/iGT channel transistorsusing a single directly-deposited microcrystalline silicon film

Info

Publication number
AU5587500A
AU5587500A AU55875/00A AU5587500A AU5587500A AU 5587500 A AU5587500 A AU 5587500A AU 55875/00 A AU55875/00 A AU 55875/00A AU 5587500 A AU5587500 A AU 5587500A AU 5587500 A AU5587500 A AU 5587500A
Authority
AU
Australia
Prior art keywords
igt
transistorsusing
ltigtplt
ltigtnlt
complementary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU55875/00A
Inventor
Yu Chen
Sigurd Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Princeton University
Original Assignee
Princeton University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Princeton University filed Critical Princeton University
Publication of AU5587500A publication Critical patent/AU5587500A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
AU55875/00A 1999-05-10 2000-05-10 Inverter made of complementary LTiGTpLT/iGT and LTiGTnLT/iGT channel transistorsusing a single directly-deposited microcrystalline silicon film Abandoned AU5587500A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13337299P 1999-05-10 1999-05-10
US60133372 1999-05-10
PCT/US2000/012762 WO2000068978A1 (en) 1999-05-10 2000-05-10 INVERTER MADE OF COMPLEMENTARY p AND n CHANNEL TRANSISTORS USING A SINGLE DIRECTLY-DEPOSITED MICROCRYSTALLINE SILICON FILM

Publications (1)

Publication Number Publication Date
AU5587500A true AU5587500A (en) 2000-11-21

Family

ID=22458296

Family Applications (1)

Application Number Title Priority Date Filing Date
AU55875/00A Abandoned AU5587500A (en) 1999-05-10 2000-05-10 Inverter made of complementary LTiGTpLT/iGT and LTiGTnLT/iGT channel transistorsusing a single directly-deposited microcrystalline silicon film

Country Status (2)

Country Link
AU (1) AU5587500A (en)
WO (1) WO2000068978A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465371A (en) * 2014-12-31 2015-03-25 深圳市华星光电技术有限公司 Excimer laser annealing pretreatment method, thin film transistor and production method of thin film transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980303A (en) * 1987-08-19 1990-12-25 Fujitsu Limited Manufacturing method of a Bi-MIS semiconductor device
US4889609A (en) * 1988-09-06 1989-12-26 Ovonic Imaging Systems, Inc. Continuous dry etching system
US5223449A (en) * 1989-02-16 1993-06-29 Morris Francis J Method of making an integrated circuit composed of group III-V compound field effect and bipolar semiconductors
US5946561A (en) * 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5818076A (en) * 1993-05-26 1998-10-06 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
JPH08172202A (en) * 1994-12-20 1996-07-02 Sharp Corp Thin film transistor and manufacture thereof
TW303526B (en) * 1994-12-27 1997-04-21 Matsushita Electric Ind Co Ltd
JP3581546B2 (en) * 1997-11-27 2004-10-27 キヤノン株式会社 Method for forming microcrystalline silicon film and method for manufacturing photovoltaic element

Also Published As

Publication number Publication date
WO2000068978A1 (en) 2000-11-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase