AU5141999A - A system and a method for plating of a conductive pattern - Google Patents

A system and a method for plating of a conductive pattern

Info

Publication number
AU5141999A
AU5141999A AU51419/99A AU5141999A AU5141999A AU 5141999 A AU5141999 A AU 5141999A AU 51419/99 A AU51419/99 A AU 51419/99A AU 5141999 A AU5141999 A AU 5141999A AU 5141999 A AU5141999 A AU 5141999A
Authority
AU
Australia
Prior art keywords
plating
conductive pattern
conductive
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU51419/99A
Inventor
Philippe Arquint
Kris Baert
Walter Gumbrecht
Filip Van Steenkiste
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Siemens AG
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC, Siemens AG filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of AU5141999A publication Critical patent/AU5141999A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
AU51419/99A 1998-07-24 1999-07-14 A system and a method for plating of a conductive pattern Abandoned AU5141999A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9397498P 1998-07-24 1998-07-24
US06093974 1998-07-24
PCT/BE1999/000090 WO2000007229A1 (en) 1998-07-24 1999-07-14 A system and a method for plating of a conductive pattern

Publications (1)

Publication Number Publication Date
AU5141999A true AU5141999A (en) 2000-02-21

Family

ID=22242015

Family Applications (1)

Application Number Title Priority Date Filing Date
AU51419/99A Abandoned AU5141999A (en) 1998-07-24 1999-07-14 A system and a method for plating of a conductive pattern

Country Status (4)

Country Link
EP (1) EP1114450A1 (en)
JP (1) JP2002521575A (en)
AU (1) AU5141999A (en)
WO (1) WO2000007229A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6782116B2 (en) * 2016-08-02 2020-11-11 古河電気工業株式会社 Silver coating material

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6701136A (en) * 1967-01-25 1968-07-26
DE2830761A1 (en) * 1978-07-13 1980-01-24 Bosch Gmbh Robert Thickened anode contact Schottky diode production - involves electroplating by passing current in forward direction through diode to plating anode
JPS57153431A (en) * 1981-03-17 1982-09-22 Mitsubishi Electric Corp Electroplating method for semiconductor wafer
JPS60128615A (en) * 1983-12-15 1985-07-09 Sumitomo Electric Ind Ltd Electrolyte plating method for semiconductor wafer
KR900008647B1 (en) * 1986-03-20 1990-11-26 후지쓰 가부시끼가이샤 A method for manufacturing three demensional i.c.
FR2742452B1 (en) * 1995-12-18 1998-01-16 Commissariat Energie Atomique SUPPORT FOR ELECTROCHEMICAL DEPOSIT

Also Published As

Publication number Publication date
WO2000007229A1 (en) 2000-02-10
JP2002521575A (en) 2002-07-16
EP1114450A1 (en) 2001-07-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase