AU4654401A - Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals - Google Patents

Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals

Info

Publication number
AU4654401A
AU4654401A AU46544/01A AU4654401A AU4654401A AU 4654401 A AU4654401 A AU 4654401A AU 46544/01 A AU46544/01 A AU 46544/01A AU 4654401 A AU4654401 A AU 4654401A AU 4654401 A AU4654401 A AU 4654401A
Authority
AU
Australia
Prior art keywords
anneals
sic
layers
carbon
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU46544/01A
Inventor
Maria Cruz Acero Leal
Jaume Esteve Tinto
Juan Ramon Morante Lleonart
Alejandro Perez Rodriguez
Alberto Romano Rodriguez
Christophe Serre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Universitat de Barcelona UB
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Universitat Autonoma de Barcelona UAB
Universitat de Barcelona UB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC, Universitat Autonoma de Barcelona UAB, Universitat de Barcelona UB filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Publication of AU4654401A publication Critical patent/AU4654401A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
AU46544/01A 2000-03-31 2001-03-30 Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals Abandoned AU4654401A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ES200000813A ES2165315B1 (en) 2000-03-31 2000-03-31 PROCEDURE FOR MANUFACTURE OF SILICON CARBIDE LAYERS (SIC) BY ION CARBON AND RECOGNIZED IONIC IMPLEMENTATION.
ES200000813 2000-03-31
PCT/ES2001/000128 WO2001072104A1 (en) 2000-03-31 2001-03-30 Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals

Publications (1)

Publication Number Publication Date
AU4654401A true AU4654401A (en) 2001-10-08

Family

ID=8492974

Family Applications (1)

Application Number Title Priority Date Filing Date
AU46544/01A Abandoned AU4654401A (en) 2000-03-31 2001-03-30 Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals

Country Status (3)

Country Link
AU (1) AU4654401A (en)
ES (1) ES2165315B1 (en)
WO (1) WO2001072104A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60211190T2 (en) * 2001-10-12 2006-10-26 Siltronic Ag METHOD FOR PRODUCING A SEMICONDUCTOR COATING STRUCTURE AND CORRESPONDING STRUCTURE
JP2009149481A (en) * 2007-12-21 2009-07-09 Siltronic Ag Method for manufacturing semiconductor substrate
US8269931B2 (en) 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
DE102016111909B4 (en) 2016-06-29 2020-08-13 Infineon Technologies Ag Micromechanical structure and method of making it
WO2018104247A1 (en) * 2016-12-05 2018-06-14 Officine Panerai Ag Timepiece component having improved tribological properties and method for optimising the tribological properties of a timepiece component

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2670563B2 (en) * 1988-10-12 1997-10-29 富士通株式会社 Method for manufacturing semiconductor device
FR2774214B1 (en) * 1998-01-28 2002-02-08 Commissariat Energie Atomique PROCESS FOR PRODUCING A SEMICONDUCTOR TYPE STRUCTURE ON INSULATOR AND IN PARTICULAR SiCOI

Also Published As

Publication number Publication date
WO2001072104A1 (en) 2001-10-04
ES2165315A1 (en) 2002-03-01
ES2165315B1 (en) 2003-08-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase