AU4654401A - Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals - Google Patents
Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and annealsInfo
- Publication number
- AU4654401A AU4654401A AU46544/01A AU4654401A AU4654401A AU 4654401 A AU4654401 A AU 4654401A AU 46544/01 A AU46544/01 A AU 46544/01A AU 4654401 A AU4654401 A AU 4654401A AU 4654401 A AU4654401 A AU 4654401A
- Authority
- AU
- Australia
- Prior art keywords
- anneals
- sic
- layers
- carbon
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES200000813A ES2165315B1 (en) | 2000-03-31 | 2000-03-31 | PROCEDURE FOR MANUFACTURE OF SILICON CARBIDE LAYERS (SIC) BY ION CARBON AND RECOGNIZED IONIC IMPLEMENTATION. |
ES200000813 | 2000-03-31 | ||
PCT/ES2001/000128 WO2001072104A1 (en) | 2000-03-31 | 2001-03-30 | Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals |
Publications (1)
Publication Number | Publication Date |
---|---|
AU4654401A true AU4654401A (en) | 2001-10-08 |
Family
ID=8492974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU46544/01A Abandoned AU4654401A (en) | 2000-03-31 | 2001-03-30 | Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU4654401A (en) |
ES (1) | ES2165315B1 (en) |
WO (1) | WO2001072104A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60211190T2 (en) * | 2001-10-12 | 2006-10-26 | Siltronic Ag | METHOD FOR PRODUCING A SEMICONDUCTOR COATING STRUCTURE AND CORRESPONDING STRUCTURE |
JP2009149481A (en) * | 2007-12-21 | 2009-07-09 | Siltronic Ag | Method for manufacturing semiconductor substrate |
US8269931B2 (en) | 2009-09-14 | 2012-09-18 | The Aerospace Corporation | Systems and methods for preparing films using sequential ion implantation, and films formed using same |
US8946864B2 (en) | 2011-03-16 | 2015-02-03 | The Aerospace Corporation | Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same |
US9324579B2 (en) | 2013-03-14 | 2016-04-26 | The Aerospace Corporation | Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates |
DE102016111909B4 (en) | 2016-06-29 | 2020-08-13 | Infineon Technologies Ag | Micromechanical structure and method of making it |
WO2018104247A1 (en) * | 2016-12-05 | 2018-06-14 | Officine Panerai Ag | Timepiece component having improved tribological properties and method for optimising the tribological properties of a timepiece component |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2670563B2 (en) * | 1988-10-12 | 1997-10-29 | 富士通株式会社 | Method for manufacturing semiconductor device |
FR2774214B1 (en) * | 1998-01-28 | 2002-02-08 | Commissariat Energie Atomique | PROCESS FOR PRODUCING A SEMICONDUCTOR TYPE STRUCTURE ON INSULATOR AND IN PARTICULAR SiCOI |
-
2000
- 2000-03-31 ES ES200000813A patent/ES2165315B1/en not_active Expired - Fee Related
-
2001
- 2001-03-30 WO PCT/ES2001/000128 patent/WO2001072104A1/en active Application Filing
- 2001-03-30 AU AU46544/01A patent/AU4654401A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2001072104A1 (en) | 2001-10-04 |
ES2165315A1 (en) | 2002-03-01 |
ES2165315B1 (en) | 2003-08-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |