AU454328B2 - Improvements in planar p-n junctions - Google Patents
Improvements in planar p-n junctionsInfo
- Publication number
- AU454328B2 AU454328B2 AU32810/71A AU3281071A AU454328B2 AU 454328 B2 AU454328 B2 AU 454328B2 AU 32810/71 A AU32810/71 A AU 32810/71A AU 3281071 A AU3281071 A AU 3281071A AU 454328 B2 AU454328 B2 AU 454328B2
- Authority
- AU
- Australia
- Prior art keywords
- junctions
- planar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU32810/71A AU454328B2 (en) | 1970-11-25 | 1970-11-25 | Improvements in planar p-n junctions |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU32810/71A AU454328B2 (en) | 1970-11-25 | 1970-11-25 | Improvements in planar p-n junctions |
Publications (2)
Publication Number | Publication Date |
---|---|
AU3281071A AU3281071A (en) | 1973-03-01 |
AU454328B2 true AU454328B2 (en) | 1974-10-31 |
Family
ID=3720280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU32810/71A Expired AU454328B2 (en) | 1970-11-25 | 1970-11-25 | Improvements in planar p-n junctions |
Country Status (1)
Country | Link |
---|---|
AU (1) | AU454328B2 (en) |
-
1970
- 1970-11-25 AU AU32810/71A patent/AU454328B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU3281071A (en) | 1973-03-01 |
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