AU4195572A - Insulated gate semiconductor device - Google Patents
Insulated gate semiconductor deviceInfo
- Publication number
- AU4195572A AU4195572A AU41955/72A AU4195572A AU4195572A AU 4195572 A AU4195572 A AU 4195572A AU 41955/72 A AU41955/72 A AU 41955/72A AU 4195572 A AU4195572 A AU 4195572A AU 4195572 A AU4195572 A AU 4195572A
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- insulated gate
- gate semiconductor
- insulated
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP30635.71 | 1971-05-08 | ||
JP3063571 | 1971-05-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
AU4195572A true AU4195572A (en) | 1974-05-16 |
AU453010B2 AU453010B2 (en) | 1974-09-19 |
Family
ID=12309285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU41955/72A Expired AU453010B2 (en) | 1971-05-08 | 1972-05-05 | Insulated gate semiconductor device |
Country Status (6)
Country | Link |
---|---|
AU (1) | AU453010B2 (en) |
CA (1) | CA961172A (en) |
DE (1) | DE2221865A1 (en) |
FR (1) | FR2137592B1 (en) |
GB (1) | GB1390135A (en) |
NL (1) | NL7206103A (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3890632A (en) * | 1973-12-03 | 1975-06-17 | Rca Corp | Stabilized semiconductor devices and method of making same |
FR2428327A1 (en) * | 1978-06-09 | 1980-01-04 | Thomson Csf | FIELD EFFECT TRANSISTOR CONSTITUTING A MEMORY POINT AND ITS MANUFACTURING METHOD |
US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US5130767C1 (en) * | 1979-05-14 | 2001-08-14 | Int Rectifier Corp | Plural polygon source pattern for mosfet |
EP0039736A4 (en) * | 1979-11-14 | 1983-04-06 | Ncr Corp | Conductor-insulator semiconductor devices and methods for making the same. |
US4835585A (en) * | 1984-11-26 | 1989-05-30 | American Telephone And Telegraph Company, At&T Bell Laboratories | Trench gate structures |
US4766094A (en) * | 1986-03-21 | 1988-08-23 | Hollinger Theodore G | Semiconductor doping process |
US5231474A (en) * | 1986-03-21 | 1993-07-27 | Advanced Power Technology, Inc. | Semiconductor device with doped electrical breakdown control region |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
EP1003222A1 (en) * | 1998-11-19 | 2000-05-24 | STMicroelectronics S.r.l. | Improved field-effect transistor and corresponding manufacturing method |
US9099556B2 (en) * | 2011-08-19 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having an active region with wing structure |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
-
1972
- 1972-05-04 DE DE19722221865 patent/DE2221865A1/en active Pending
- 1972-05-04 GB GB2077572A patent/GB1390135A/en not_active Expired
- 1972-05-05 AU AU41955/72A patent/AU453010B2/en not_active Expired
- 1972-05-05 FR FR7216267A patent/FR2137592B1/fr not_active Expired
- 1972-05-05 NL NL7206103A patent/NL7206103A/xx unknown
- 1972-05-08 CA CA141,573A patent/CA961172A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1390135A (en) | 1975-04-09 |
FR2137592A1 (en) | 1972-12-29 |
FR2137592B1 (en) | 1979-02-09 |
DE2221865A1 (en) | 1972-11-23 |
CA961172A (en) | 1975-01-14 |
AU453010B2 (en) | 1974-09-19 |
NL7206103A (en) | 1972-11-10 |
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