AU3700599A - Method and arrangement for producing thin metal chalcogenide layers - Google Patents

Method and arrangement for producing thin metal chalcogenide layers

Info

Publication number
AU3700599A
AU3700599A AU37005/99A AU3700599A AU3700599A AU 3700599 A AU3700599 A AU 3700599A AU 37005/99 A AU37005/99 A AU 37005/99A AU 3700599 A AU3700599 A AU 3700599A AU 3700599 A AU3700599 A AU 3700599A
Authority
AU
Australia
Prior art keywords
arrangement
metal chalcogenide
chalcogenide layers
thin metal
producing thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU37005/99A
Inventor
Christian Fischer
Rolf Konenkamp
Martha Christina Lux-Steiner
Jesco Moller
Susanne Siebentritt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hahn Meitner Institut Berlin GmbH
Original Assignee
Hahn Meitner Institut Berlin GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19831214A external-priority patent/DE19831214C2/en
Application filed by Hahn Meitner Institut Berlin GmbH filed Critical Hahn Meitner Institut Berlin GmbH
Publication of AU3700599A publication Critical patent/AU3700599A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
    • C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
    • C23C10/22—Metal melt containing the element to be diffused
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention relates to a method and arrangement for producing thin metal chalcogenide layers, for example, for use as absorption or buffer layers in solar cells. The aim of the invention is to provide a method and an arrangement for easily producing homogeneous metal chalcogenide layers with consistent quality while adhering to economical and ecological points of view. To this end, the following method steps are carried out: 1. Depositing a solution of a metal compound on a substrate for the adsorption of metal ions; 2. Extracting moisture out of the substrate with the metal ions which are adsorbed on the surface thereof; 3. Introducing a gas containing chalcogen hydrogen for reacting with the adsorbed metal ions.
AU37005/99A 1998-03-19 1999-03-12 Method and arrangement for producing thin metal chalcogenide layers Abandoned AU3700599A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19813154 1998-03-19
DE19813154 1998-03-19
DE19831214A DE19831214C2 (en) 1998-03-19 1998-07-03 Method and arrangement for producing thin metal chalcogenide layers
DE19831214 1998-07-03
PCT/DE1999/000811 WO1999048158A1 (en) 1998-03-19 1999-03-12 Method and arrangement for producing thin metal chalcogenide layers

Publications (1)

Publication Number Publication Date
AU3700599A true AU3700599A (en) 1999-10-11

Family

ID=26044952

Family Applications (1)

Application Number Title Priority Date Filing Date
AU37005/99A Abandoned AU3700599A (en) 1998-03-19 1999-03-12 Method and arrangement for producing thin metal chalcogenide layers

Country Status (7)

Country Link
EP (1) EP1064685B9 (en)
JP (1) JP4587247B2 (en)
AT (1) ATE369631T1 (en)
AU (1) AU3700599A (en)
DE (1) DE59914444D1 (en)
ES (1) ES2292241T3 (en)
WO (1) WO1999048158A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4443645B2 (en) * 1998-05-07 2010-03-31 本田技研工業株式会社 CBD deposition system
DE19916403C1 (en) * 1999-04-06 2000-10-12 Hahn Meitner Inst Berlin Gmbh Process for the production of thin, poorly soluble coatings
US8613973B2 (en) 2007-12-06 2013-12-24 International Business Machines Corporation Photovoltaic device with solution-processed chalcogenide absorber layer
JP2011091229A (en) * 2009-10-23 2011-05-06 Kyocera Corp Methods for manufacturing photoelectric converter and photoelectric conversion apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242374A (en) * 1979-04-19 1980-12-30 Exxon Research & Engineering Co. Process for thin film deposition of metal and mixed metal chalcogenides displaying semi-conductor properties

Also Published As

Publication number Publication date
JP4587247B2 (en) 2010-11-24
ES2292241T3 (en) 2008-03-01
ATE369631T1 (en) 2007-08-15
WO1999048158A1 (en) 1999-09-23
EP1064685B9 (en) 2008-07-23
EP1064685B1 (en) 2007-08-08
JP2002507843A (en) 2002-03-12
EP1064685A1 (en) 2001-01-03
DE59914444D1 (en) 2007-09-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase