AU2860599A - Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material - Google Patents

Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material

Info

Publication number
AU2860599A
AU2860599A AU28605/99A AU2860599A AU2860599A AU 2860599 A AU2860599 A AU 2860599A AU 28605/99 A AU28605/99 A AU 28605/99A AU 2860599 A AU2860599 A AU 2860599A AU 2860599 A AU2860599 A AU 2860599A
Authority
AU
Australia
Prior art keywords
semiconducting material
substrate
electrochemically etching
partly porous
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU28605/99A
Inventor
Rint Willem Tjerkstra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stichting voor de Technische Wetenschappen STW
Original Assignee
Stichting voor de Technische Wetenschappen STW
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL1008441A external-priority patent/NL1008441C2/en
Application filed by Stichting voor de Technische Wetenschappen STW filed Critical Stichting voor de Technische Wetenschappen STW
Publication of AU2860599A publication Critical patent/AU2860599A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063Electrolytic etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/005Bulk micromachining
    • B81C1/00515Bulk micromachining techniques not provided for in B81C1/00507
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/14Etching locally
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111Bulk micromachining
    • B81C2201/0114Electrochemical etching, anodic oxidation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111Bulk micromachining
    • B81C2201/0115Porous silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
AU28605/99A 1998-03-02 1999-03-02 Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material Abandoned AU2860599A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
NL1008441A NL1008441C2 (en) 1998-03-02 1998-03-02 Electrochemically etching a p-type semiconductor layer
NL1008441 1998-03-02
NL1010234A NL1010234C1 (en) 1998-03-02 1998-10-02 Method for the electrochemical etching of a p-type semiconductor material, as well as a substrate of at least partially porous semiconductor material.
NL1010234 1998-10-02
PCT/NL1999/000111 WO1999045583A1 (en) 1998-03-02 1999-03-02 Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material

Publications (1)

Publication Number Publication Date
AU2860599A true AU2860599A (en) 1999-09-20

Family

ID=26642754

Family Applications (1)

Application Number Title Priority Date Filing Date
AU28605/99A Abandoned AU2860599A (en) 1998-03-02 1999-03-02 Method for electrochemically etching a p-type semiconducting material, and a substrate of at least partly porous semiconducting material

Country Status (3)

Country Link
AU (1) AU2860599A (en)
NL (1) NL1010234C1 (en)
WO (1) WO1999045583A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10032579B4 (en) * 2000-07-05 2020-07-02 Robert Bosch Gmbh Method for producing a semiconductor component and a semiconductor component produced by the method
DE10046622B4 (en) * 2000-09-20 2010-05-20 Robert Bosch Gmbh Method for producing a membrane sensor unit and membrane sensor unit
DE10054484A1 (en) 2000-11-03 2002-05-08 Bosch Gmbh Robert Micromechanical component and corresponding manufacturing method
DE10055872B4 (en) * 2000-11-10 2004-02-05 Robert Bosch Gmbh Process for producing a porous structure for a sieve or a filter and porous structure for a sieve or a filter
DE10065026A1 (en) 2000-12-23 2002-07-04 Bosch Gmbh Robert Micromechanical component and corresponding manufacturing method
DE10138759A1 (en) * 2001-08-07 2003-03-06 Bosch Gmbh Robert Method for producing a semiconductor component and semiconductor component, in particular membrane sensor
GR1004106B (en) * 2002-01-24 2003-01-13 Εκεφε "Δημοκριτος" Ινστιτουτο Μικροηλεκτρονικης Low power silicon thermal sensors and microfluidic devices based on the use of porous silicon sealed air cavity technology or microchannel technology
DE10210335A1 (en) * 2002-03-08 2003-10-02 Bosch Gmbh Robert diaphragm sensor
KR100692593B1 (en) * 2005-01-24 2007-03-13 삼성전자주식회사 Manufacturing method of mems structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139624A (en) * 1990-12-06 1992-08-18 Sri International Method for making porous semiconductor membranes
DE19653097A1 (en) * 1996-12-20 1998-07-02 Forschungszentrum Juelich Gmbh Layer with a porous layer area, an interference filter containing such a layer and method for its production

Also Published As

Publication number Publication date
WO1999045583A1 (en) 1999-09-10
NL1010234C1 (en) 1999-09-03

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase