AU2857001A - Laser source wavelength multiplexer - Google Patents

Laser source wavelength multiplexer

Info

Publication number
AU2857001A
AU2857001A AU28570/01A AU2857001A AU2857001A AU 2857001 A AU2857001 A AU 2857001A AU 28570/01 A AU28570/01 A AU 28570/01A AU 2857001 A AU2857001 A AU 2857001A AU 2857001 A AU2857001 A AU 2857001A
Authority
AU
Australia
Prior art keywords
laser source
source wavelength
wavelength multiplexer
multiplexer
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU28570/01A
Inventor
Jean-Pierre Huignard
Christian Larat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of AU2857001A publication Critical patent/AU2857001A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU28570/01A 1999-12-23 2000-12-21 Laser source wavelength multiplexer Abandoned AU2857001A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9916401 1999-12-23
FR9916401A FR2803116B1 (en) 1999-12-23 1999-12-23 WAVELENGTH MULTIPLEXER OF LASER SOURCES
PCT/FR2000/003644 WO2001048882A1 (en) 1999-12-23 2000-12-21 Laser source wavelength multiplexer

Publications (1)

Publication Number Publication Date
AU2857001A true AU2857001A (en) 2001-07-09

Family

ID=9553768

Family Applications (1)

Application Number Title Priority Date Filing Date
AU28570/01A Abandoned AU2857001A (en) 1999-12-23 2000-12-21 Laser source wavelength multiplexer

Country Status (4)

Country Link
EP (1) EP1155484A1 (en)
AU (1) AU2857001A (en)
FR (1) FR2803116B1 (en)
WO (1) WO2001048882A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006025849A2 (en) 2004-01-20 2006-03-09 Trumpf Photonics, Inc. High-power semiconductor laser
DE102004053137A1 (en) * 2004-10-29 2006-05-11 Raab, Volker, Dr. Multispectral laser with multiple gain elements
FR2883384B1 (en) * 2005-03-18 2008-01-18 Thales Sa OPTICAL DEVICE FOR WAVELENGTH MULTIPLEXING
US7627013B2 (en) 2006-02-03 2009-12-01 Hewlett-Packard Development Company, L.P. Light source module
US9690107B2 (en) 2013-03-15 2017-06-27 Trumpf Laser Gmbh Device for wavelength combining of laser beams
WO2023021675A1 (en) * 2021-08-20 2023-02-23 三菱電機株式会社 Semiconductor laser device and illumination device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574007A (en) * 1980-06-07 1982-01-09 Takumi Tomijima Multiple wavelength light communication system
JPS61251183A (en) * 1985-04-30 1986-11-08 Fujitsu Ltd Two frequency semiconductor laser
US5351262A (en) * 1992-09-10 1994-09-27 Bell Communications Research, Inc. Multi-stripe array grating integrated cavity laser

Also Published As

Publication number Publication date
FR2803116A1 (en) 2001-06-29
FR2803116B1 (en) 2002-03-22
WO2001048882A1 (en) 2001-07-05
EP1155484A1 (en) 2001-11-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase