AU2773001A - Enhanced faraday cup for diagnostic measurements in an ion implanter - Google Patents

Enhanced faraday cup for diagnostic measurements in an ion implanter

Info

Publication number: AU2773001A
Authority: AU; Australia
Prior art keywords: ion implanter; faraday cup; diagnostic measurements; enhanced; enhanced faraday
Prior art date: 2000-01-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU27730/01A

Inventor

Donald W Berrian

John W Vanderpot

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Proteros LLC

Original Assignee

MULTILEVEL METALS Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-01-07

Filing date

2001-01-08

Publication date

2001-07-24

2001-01-08 Application filed by MULTILEVEL METALS Inc filed Critical MULTILEVEL METALS Inc

2001-07-24 Publication of AU2773001A publication Critical patent/AU2773001A/en

Status Abandoned legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24405—Faraday cages
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry

Landscapes

Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Measurement Of Radiation (AREA)
Electron Sources, Ion Sources (AREA)

AU27730/01A 2000-01-07 2001-01-08 Enhanced faraday cup for diagnostic measurements in an ion implanter Abandoned AU2773001A (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US17510200P	2000-01-07	2000-01-07
US60175102		2000-01-07
PCT/US2001/000579 WO2001051183A1 (en)	2000-01-07	2001-01-08	Enhanced faraday cup for diagnostic measurements in an ion implanter

Publications (1)

Publication Number	Publication Date
AU2773001A true AU2773001A (en)	2001-07-24

Family

ID=22638898

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU27730/01A Abandoned AU2773001A (en)	2000-01-07	2001-01-08	Enhanced faraday cup for diagnostic measurements in an ion implanter

Country Status (2)

Country	Link
AU (1)	AU2773001A (en)
WO (1)	WO2001051183A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE10329383B4 (en) *	2003-06-30	2006-07-27	Advanced Micro Devices, Inc., Sunnyvale	Ion beam detector for ion implantation systems, Faraday containers therefor and methods for controlling the properties of an ion beam using the ion beam detector
DE10329388B4 (en) *	2003-06-30	2006-12-28	Advanced Micro Devices, Inc., Sunnyvale	Faraday arrangement as an ion beam measuring device for an ion implantation system and method for its operation
DK1649487T3 (en) *	2003-08-01	2007-07-02	Secretary Dept Atomic Energy	Device for measuring and quantitatively determining charged particle rays
US6903350B1 (en)	2004-06-10	2005-06-07	Axcelis Technologies, Inc.	Ion beam scanning systems and methods for improved ion implantation uniformity
US7064340B1 (en)	2004-12-15	2006-06-20	Axcelis Technologies, Inc.	Method and apparatus for ion beam profiling
US7417242B2 (en) *	2005-04-01	2008-08-26	Axcelis Technologies, Inc.	Method of measuring ion beam position
US8008636B2 (en) *	2008-12-18	2011-08-30	Axcelis Technologies, Inc.	Ion implantation with diminished scanning field effects
FR2968393B1 (en) *	2010-12-07	2015-03-06	Techniques Metallurgiques Avancees Techmeta	DEVICE AND METHOD FOR ANALYZING THE DENSITY OF A BEAM OF CHARGED PARTICLES.
CN103715048B (en) *	2013-12-16	2016-05-18	中国电子科技集团公司第四十八研究所	A kind of ion implantation apparatus vertical direction ion beam angle TT&C system and measuring method
CN105895479B (en) *	2014-12-18	2019-04-23	北京中科信电子装备有限公司	A kind of ion beam detection device
CN111722263B (en) *	2020-06-15	2022-08-23	电子科技大学	Faraday cup design for high-power electron beam spot measurement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5198676A (en) *	1991-09-27	1993-03-30	Eaton Corporation	Ion beam profiling method and apparatus
EP0693126B9 (en) *	1993-04-02	2007-09-12	Rigel Pharmaceuticals, Inc.	Method for selective inactivation of viral replication
US6175416B1 (en) *	1996-08-06	2001-01-16	Brown University Research Foundation	Optical stress generator and detector
US6049220A (en) *	1998-06-10	2000-04-11	Boxer Cross Incorporated	Apparatus and method for evaluating a wafer of semiconductor material

2001
- 2001-01-08 WO PCT/US2001/000579 patent/WO2001051183A1/en active Application Filing
- 2001-01-08 AU AU27730/01A patent/AU2773001A/en not_active Abandoned

Also Published As

Publication number	Publication date
WO2001051183A1 (en)	2001-07-19

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Legal Events

Date	Code	Title	Description
2003-12-18	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase