AU2003299606A1 - Method for aberration detection and measurement - Google Patents

Method for aberration detection and measurement

Info

Publication number
AU2003299606A1
AU2003299606A1 AU2003299606A AU2003299606A AU2003299606A1 AU 2003299606 A1 AU2003299606 A1 AU 2003299606A1 AU 2003299606 A AU2003299606 A AU 2003299606A AU 2003299606 A AU2003299606 A AU 2003299606A AU 2003299606 A1 AU2003299606 A1 AU 2003299606A1
Authority
AU
Australia
Prior art keywords
measurement
aberration detection
aberration
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003299606A
Inventor
Bruce W. Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2003299606A1 publication Critical patent/AU2003299606A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU2003299606A 2002-12-13 2003-12-12 Method for aberration detection and measurement Abandoned AU2003299606A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US43315302P 2002-12-13 2002-12-13
US60/433,153 2002-12-13
PCT/US2003/039457 WO2004055472A2 (en) 2002-12-13 2003-12-12 Method for aberration detection and measurement

Publications (1)

Publication Number Publication Date
AU2003299606A1 true AU2003299606A1 (en) 2004-07-09

Family

ID=32595124

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003299606A Abandoned AU2003299606A1 (en) 2002-12-13 2003-12-12 Method for aberration detection and measurement

Country Status (3)

Country Link
US (2) US7136143B2 (en)
AU (1) AU2003299606A1 (en)
WO (1) WO2004055472A2 (en)

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US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
JP4904034B2 (en) 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション Method, system and carrier medium for evaluating reticle layout data
US20060193531A1 (en) * 2005-02-25 2006-08-31 William Roberts System for analyzing images of blazed phase grating samples
US7769225B2 (en) * 2005-08-02 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for detecting defects in a reticle design pattern
DE102005041203A1 (en) 2005-08-31 2007-03-01 Carl Zeiss Sms Gmbh Device for interferometric measurement of phase masks used for e.g. lithography, produces phase shifting interferogram to be applied over phase mask by translating coherence mask and/or diffraction grating in X-Y direction
US7570796B2 (en) 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8041103B2 (en) 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
JP5427609B2 (en) * 2006-12-19 2014-02-26 ケーエルエー−テンカー・コーポレーション Inspection recipe creation system and method
WO2008086282A2 (en) 2007-01-05 2008-07-17 Kla-Tencor Corporation Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US7738093B2 (en) 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
US7962863B2 (en) 2007-05-07 2011-06-14 Kla-Tencor Corp. Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer
US8213704B2 (en) 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US7796804B2 (en) 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US7711514B2 (en) 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
TWI469235B (en) 2007-08-20 2015-01-11 Kla Tencor Corp Computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects
US8139844B2 (en) 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
US8432530B2 (en) * 2008-07-22 2013-04-30 Canon Kabushiki Kaisha Device, method, and system for measuring image profiles produced by an optical lithography system
WO2010014609A2 (en) 2008-07-28 2010-02-04 Kla-Tencor Corporation Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
EP2328168B1 (en) * 2008-09-25 2015-04-29 Hitachi High-Technologies Corporation Charged particle beam apparatus and geometric aberration measuring method employed therein
DE102008061122A1 (en) * 2008-12-09 2010-06-17 Fresenius Medical Care Deutschland Gmbh Method and device for determining and / or monitoring a physical condition, in particular a cardiovascular size, of a patient based on an amplitude of a pressure signal
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
JP5581248B2 (en) * 2011-03-08 2014-08-27 株式会社日立ハイテクノロジーズ Scanning electron microscope
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
JP5969848B2 (en) * 2012-07-19 2016-08-17 キヤノン株式会社 Exposure apparatus, method for obtaining adjustment amount for adjustment, program, and device manufacturing method
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
US9092846B2 (en) 2013-02-01 2015-07-28 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific and multi-channel information
US9442384B2 (en) * 2013-03-13 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet lithography process and mask
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
DE102014210641B4 (en) 2014-06-04 2020-12-10 Carl Zeiss Ag Test object, use of a test object and device and method for measuring the point spread function of an optical system
DE102015219330A1 (en) 2015-10-07 2017-04-13 Carl Zeiss Smt Gmbh Method and apparatus for beam analysis
US10451564B2 (en) * 2017-10-27 2019-10-22 Applied Materials, Inc. Empirical detection of lens aberration for diffraction-limited optical system

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JP3165711B2 (en) * 1991-08-02 2001-05-14 キヤノン株式会社 Image projection method and method for manufacturing semiconductor device using the method
US5828455A (en) * 1997-03-07 1998-10-27 Litel Instruments Apparatus, method of measurement, and method of data analysis for correction of optical system
US5978085A (en) * 1997-03-07 1999-11-02 Litel Instruments Apparatus method of measurement and method of data analysis for correction of optical system
US6552776B1 (en) * 1998-10-30 2003-04-22 Advanced Micro Devices, Inc. Photolithographic system including light filter that compensates for lens error
JP2000146758A (en) 1998-11-18 2000-05-26 Hitachi Ltd Lens aberration measuring method, photomask used therefor and fabrication of semiconductor device
US6368763B2 (en) * 1998-11-23 2002-04-09 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
US6248486B1 (en) * 1998-11-23 2001-06-19 U.S. Philips Corporation Method of detecting aberrations of an optical imaging system
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US6753954B2 (en) * 2000-12-06 2004-06-22 Asml Masktools B.V. Method and apparatus for detecting aberrations in a projection lens utilized for projection optics
US6960415B2 (en) * 2001-10-01 2005-11-01 Canon Kabushiki Kaisha Aberration measuring method and projection exposure apparatus
US6839132B2 (en) * 2002-02-12 2005-01-04 Kabushiki Kaisha Toshiba Aberration measuring method of projection optical system
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US6759180B2 (en) * 2002-04-23 2004-07-06 Hewlett-Packard Development Company, L.P. Method of fabricating sub-lithographic sized line and space patterns for nano-imprinting lithography

Also Published As

Publication number Publication date
WO2004055472A3 (en) 2004-08-12
US20070019171A1 (en) 2007-01-25
US20040174506A1 (en) 2004-09-09
US7345735B2 (en) 2008-03-18
WO2004055472A2 (en) 2004-07-01
US7136143B2 (en) 2006-11-14

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase