AU2003273368A1 - Method of forming a sensor for detecting motion - Google Patents

Method of forming a sensor for detecting motion

Info

Publication number
AU2003273368A1
AU2003273368A1 AU2003273368A AU2003273368A AU2003273368A1 AU 2003273368 A1 AU2003273368 A1 AU 2003273368A1 AU 2003273368 A AU2003273368 A AU 2003273368A AU 2003273368 A AU2003273368 A AU 2003273368A AU 2003273368 A1 AU2003273368 A1 AU 2003273368A1
Authority
AU
Australia
Prior art keywords
sensor
forming
detecting motion
motion
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003273368A
Inventor
Bishnu Gogoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003273368A1 publication Critical patent/AU2003273368A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00142Bridges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191Transfer of a layer from a carrier wafer to a device wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)
AU2003273368A 2002-10-07 2003-09-23 Method of forming a sensor for detecting motion Abandoned AU2003273368A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/267,082 2002-10-07
US10/267,082 US20040065638A1 (en) 2002-10-07 2002-10-07 Method of forming a sensor for detecting motion
PCT/US2003/030592 WO2004033365A2 (en) 2002-10-07 2003-09-23 Method of forming a sensor for detecting motion

Publications (1)

Publication Number Publication Date
AU2003273368A1 true AU2003273368A1 (en) 2004-05-04

Family

ID=32042788

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003273368A Abandoned AU2003273368A1 (en) 2002-10-07 2003-09-23 Method of forming a sensor for detecting motion

Country Status (3)

Country Link
US (1) US20040065638A1 (en)
AU (1) AU2003273368A1 (en)
WO (1) WO2004033365A2 (en)

Families Citing this family (20)

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US7381630B2 (en) 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
US7406761B2 (en) * 2005-03-21 2008-08-05 Honeywell International Inc. Method of manufacturing vibrating micromechanical structures
US7407826B2 (en) * 2005-03-21 2008-08-05 Honeywell International Inc. Vacuum packaged single crystal silicon device
US7562573B2 (en) * 2005-07-21 2009-07-21 Evigia Systems, Inc. Integrated sensor and circuitry and process therefor
TW200733264A (en) * 2005-11-25 2007-09-01 Matsushita Electric Works Ltd Method of producing wafer-level package structure
KR101076665B1 (en) * 2005-11-25 2011-10-26 파나소닉 전공 주식회사 Sensor device and production method therefor
EP3257809A1 (en) * 2005-11-25 2017-12-20 Panasonic Intellectual Property Management Co., Ltd. Wafer level package structure and production method therefor
WO2007127107A2 (en) * 2006-04-21 2007-11-08 Bioscale, Inc. Microfabricated devices and method for fabricating microfabricated devices
US20080032501A1 (en) * 2006-07-21 2008-02-07 Honeywell International Inc. Silicon on metal for mems devices
US7999440B2 (en) * 2006-11-27 2011-08-16 Bioscale, Inc. Micro-fabricated devices having a suspended membrane or plate structure
US20080121042A1 (en) * 2006-11-27 2008-05-29 Bioscale, Inc. Fluid paths in etchable materials
US20080125700A1 (en) * 2006-11-29 2008-05-29 Moberg Sheldon B Methods and apparatuses for detecting medical device acceleration, temperature, and humidity conditions
KR101001666B1 (en) * 2008-07-08 2010-12-15 광주과학기술원 The method for fabricating micro vertical structure
DE102009029201B4 (en) * 2009-09-04 2019-05-09 Robert Bosch Gmbh Method for producing a component comprising a microstructured or nanostructured component
US8569092B2 (en) * 2009-12-28 2013-10-29 General Electric Company Method for fabricating a microelectromechanical sensor with a piezoresistive type readout
CN102134053B (en) * 2010-01-21 2013-04-03 深迪半导体(上海)有限公司 Manufacturing method of biaxial MEMS (micro-electro-mechanical system) gyroscope
FR2972263B1 (en) * 2011-03-03 2013-09-27 Tronics Microsystems INERTIAL SENSOR AND METHOD FOR MANUFACTURING THE SAME
CN102344113B (en) * 2011-09-08 2014-03-12 上海先进半导体制造股份有限公司 Method for etching device deep slot with metal sensitive interlayer
US9010200B2 (en) 2012-08-06 2015-04-21 Amphenol Thermometrics, Inc. Device for measuring forces and method of making the same
DE102017215236A1 (en) * 2017-08-31 2019-02-28 Siemens Aktiengesellschaft MEMS switch and method of manufacturing a MEMS switch

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
US4699006A (en) * 1984-03-19 1987-10-13 The Charles Stark Draper Laboratory, Inc. Vibratory digital integrating accelerometer
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
US5473945A (en) * 1990-02-14 1995-12-12 The Charles Stark Draper Laboratory, Inc. Micromechanical angular accelerometer with auxiliary linear accelerometer
US5635639A (en) * 1991-09-11 1997-06-03 The Charles Stark Draper Laboratory, Inc. Micromechanical tuning fork angular rate sensor
US5331852A (en) * 1991-09-11 1994-07-26 The Charles Stark Draper Laboratory, Inc. Electromagnetic rebalanced micromechanical transducer
US5408877A (en) * 1992-03-16 1995-04-25 The Charles Stark Draper Laboratory, Inc. Micromechanical gyroscopic transducer with improved drive and sense capabilities
US5349855A (en) * 1992-04-07 1994-09-27 The Charles Stark Draper Laboratory, Inc. Comb drive micromechanical tuning fork gyro
US5377524A (en) * 1992-06-22 1995-01-03 The Regents Of The University Of Michigan Self-testing capacitive pressure transducer and method
US5492596A (en) * 1994-02-04 1996-02-20 The Charles Stark Draper Laboratory, Inc. Method of making a micromechanical silicon-on-glass tuning fork gyroscope
FR2744285B1 (en) * 1996-01-25 1998-03-06 Commissariat Energie Atomique METHOD FOR TRANSFERRING A THIN FILM FROM AN INITIAL SUBSTRATE TO A FINAL SUBSTRATE
US5747353A (en) * 1996-04-16 1998-05-05 National Semiconductor Corporation Method of making surface micro-machined accelerometer using silicon-on-insulator technology
US5992233A (en) * 1996-05-31 1999-11-30 The Regents Of The University Of California Micromachined Z-axis vibratory rate gyroscope
JP3065611B1 (en) * 1999-05-28 2000-07-17 三菱電機株式会社 Micromirror device and manufacturing method thereof
US6277666B1 (en) * 1999-06-24 2001-08-21 Honeywell Inc. Precisely defined microelectromechanical structures and associated fabrication methods
US6582985B2 (en) * 2000-12-27 2003-06-24 Honeywell International Inc. SOI/glass process for forming thin silicon micromachined structures
WO2002054475A1 (en) * 2001-01-02 2002-07-11 The Charles Stark Draper Laboratory, Inc. Method for microfabricating structures using silicon-on-insulator material
US20030186521A1 (en) * 2002-03-29 2003-10-02 Kub Francis J. Method of transferring thin film functional material to a semiconductor substrate or optimized substrate using a hydrogen ion splitting technique
US6933163B2 (en) * 2002-09-27 2005-08-23 Analog Devices, Inc. Fabricating integrated micro-electromechanical systems using an intermediate electrode layer
US20040063237A1 (en) * 2002-09-27 2004-04-01 Chang-Han Yun Fabricating complex micro-electromechanical systems using a dummy handling substrate
US6872319B2 (en) * 2002-09-30 2005-03-29 Rockwell Scientific Licensing, Llc Process for high yield fabrication of MEMS devices

Also Published As

Publication number Publication date
US20040065638A1 (en) 2004-04-08
WO2004033365A3 (en) 2004-08-26
WO2004033365A2 (en) 2004-04-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase