AU2003257621A1 - Cleaning method for substrate-processing device and the device - Google Patents
Cleaning method for substrate-processing device and the deviceInfo
- Publication number
- AU2003257621A1 AU2003257621A1 AU2003257621A AU2003257621A AU2003257621A1 AU 2003257621 A1 AU2003257621 A1 AU 2003257621A1 AU 2003257621 A AU2003257621 A AU 2003257621A AU 2003257621 A AU2003257621 A AU 2003257621A AU 2003257621 A1 AU2003257621 A1 AU 2003257621A1
- Authority
- AU
- Australia
- Prior art keywords
- substrate
- cleaning method
- processing device
- processing
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002252269A JP2004091828A (en) | 2002-08-30 | 2002-08-30 | Method for cleaning substrate treatment apparatus, and substrate treatment apparatus |
JP2002/252269 | 2002-08-30 | ||
PCT/JP2003/010507 WO2004020693A1 (en) | 2002-08-30 | 2003-08-20 | Cleaning method for substrate-processing device and the device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003257621A1 true AU2003257621A1 (en) | 2004-03-19 |
Family
ID=31972729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003257621A Abandoned AU2003257621A1 (en) | 2002-08-30 | 2003-08-20 | Cleaning method for substrate-processing device and the device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2004091828A (en) |
AU (1) | AU2003257621A1 (en) |
WO (1) | WO2004020693A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190301011A1 (en) * | 2018-03-30 | 2019-10-03 | Applied Materials, Inc. | Low temperature in-situ cleaning method for epi-chambers |
KR102288382B1 (en) * | 2019-09-20 | 2021-08-11 | 대전대학교 산학협력단 | Method for removing of L-FC in plasma etching procedure and system therefor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63204616A (en) * | 1987-02-19 | 1988-08-24 | Fujitsu Ltd | Method for cleaning reaction chamber |
JPH01138716A (en) * | 1987-11-25 | 1989-05-31 | Mitsubishi Electric Corp | Method of cleaning inside of container to maintain atmosphere for treating semiconductor |
JPH0427117A (en) * | 1990-05-22 | 1992-01-30 | Fujitsu Ltd | Photo assisted vapor phase growth device |
JPH09162165A (en) * | 1995-12-04 | 1997-06-20 | Fujitsu Ltd | Processing system and cleaning method therefor |
JPH09306892A (en) * | 1996-05-14 | 1997-11-28 | Hitachi Ltd | Cleaning method and semiconductor manufacturing apparatus |
JP3670533B2 (en) * | 1999-09-27 | 2005-07-13 | 株式会社東芝 | Substrate processing apparatus and cleaning method thereof |
JP2002016011A (en) * | 2000-04-27 | 2002-01-18 | Canon Inc | Method for cleaning deposition film forming device, dry etching method, and method for manufacturing article including step of executing either of the methods |
US6453913B2 (en) * | 2000-04-27 | 2002-09-24 | Canon Kabushiki Kaisha | Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method |
-
2002
- 2002-08-30 JP JP2002252269A patent/JP2004091828A/en active Pending
-
2003
- 2003-08-20 AU AU2003257621A patent/AU2003257621A1/en not_active Abandoned
- 2003-08-20 WO PCT/JP2003/010507 patent/WO2004020693A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2004091828A (en) | 2004-03-25 |
WO2004020693A1 (en) | 2004-03-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |