AU2003243332A1 - Fabrication of ductile intermetallic sputtering targets - Google Patents

Fabrication of ductile intermetallic sputtering targets

Info

Publication number
AU2003243332A1
AU2003243332A1 AU2003243332A AU2003243332A AU2003243332A1 AU 2003243332 A1 AU2003243332 A1 AU 2003243332A1 AU 2003243332 A AU2003243332 A AU 2003243332A AU 2003243332 A AU2003243332 A AU 2003243332A AU 2003243332 A1 AU2003243332 A1 AU 2003243332A1
Authority
AU
Australia
Prior art keywords
fabrication
sputtering targets
ductile intermetallic
ductile
intermetallic sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003243332A
Inventor
Philip Corno
Bernd Kunkel
Michael Sandlin
Willy Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Inc
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Publication of AU2003243332A1 publication Critical patent/AU2003243332A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/16—Both compacting and sintering in successive or repeated steps
    • B22F3/162—Machining, working after consolidation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/16—Both compacting and sintering in successive or repeated steps
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
AU2003243332A 2002-06-07 2003-05-29 Fabrication of ductile intermetallic sputtering targets Abandoned AU2003243332A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US38643302P 2002-06-07 2002-06-07
US60/386,433 2002-06-07
PCT/US2003/016827 WO2003104522A1 (en) 2002-06-07 2003-05-29 Fabrication of ductile intermetallic sputtering targets

Publications (1)

Publication Number Publication Date
AU2003243332A1 true AU2003243332A1 (en) 2003-12-22

Family

ID=29736164

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003243332A Abandoned AU2003243332A1 (en) 2002-06-07 2003-05-29 Fabrication of ductile intermetallic sputtering targets

Country Status (7)

Country Link
US (1) US20040062675A1 (en)
EP (1) EP1511879A1 (en)
JP (1) JP2005529239A (en)
CN (1) CN1685078A (en)
AU (1) AU2003243332A1 (en)
TW (1) TWI278524B (en)
WO (1) WO2003104522A1 (en)

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US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
CN1777690B (en) * 2003-03-28 2010-11-03 Ppg工业俄亥俄公司 Substrates coated with mixtures of titanium and aluminum materials, methods for making the substrates, and cathode targets of titanium and aluminum metal
DE102005049328B4 (en) * 2005-10-12 2007-07-26 W.C. Heraeus Gmbh Material mixture, sputtering target, process for its preparation and use of the material mixture
WO2007062089A1 (en) * 2005-11-22 2007-05-31 Bodycote Imt, Inc. Fabrication of ruthenium and ruthenium alloy sputtering targets with low oxygen content
US20080170959A1 (en) * 2007-01-11 2008-07-17 Heraeus Incorporated Full density Co-W magnetic sputter targets
JP2010095770A (en) * 2008-10-17 2010-04-30 Hitachi Metals Ltd Ti-Al-BASED ALLOY TARGET AND METHOD FOR PRODUCING THE SAME
CN102343437B (en) * 2011-11-11 2014-03-26 宁波江丰电子材料有限公司 Method for manufacturing tungsten target material
CN103014633B (en) * 2012-12-12 2015-08-05 何霞文 A kind of preparation technology of the metal works with composite ceramic film
KR101414352B1 (en) 2013-05-27 2014-07-02 한국생산기술연구원 Metal coating for replacing brazing paste and method of joining metal thereby
CN104419846B (en) * 2013-09-11 2017-09-12 安泰科技股份有限公司 Mallory sharton alloy target and preparation method thereof
WO2016052371A1 (en) * 2014-09-30 2016-04-07 Ｊｘ金属株式会社 Master alloy for sputtering target and method for manufacturing sputtering target
CN111136265B (en) * 2020-03-07 2022-02-18 北京安泰六九新材料科技有限公司 Titanium-silicon alloy target and manufacturing method thereof
CN111299613A (en) * 2020-03-27 2020-06-19 宁波江丰电子材料股份有限公司 Machining method of titanium-aluminum alloy target material, product and application thereof

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US4135286A (en) * 1977-12-22 1979-01-23 United Technologies Corporation Sputtering target fabrication method
US4460541A (en) * 1980-01-16 1984-07-17 Reynolds Metals Company Aluminum powder metallurgy
US4500364A (en) * 1982-04-23 1985-02-19 Exxon Research & Engineering Co. Method of forming a protective aluminum-silicon coating composition for metal substrates
DE3573137D1 (en) * 1984-10-03 1989-10-26 Sumitomo Electric Industries Material for a semiconductor device and process for its manufacture
AT388752B (en) * 1986-04-30 1989-08-25 Plansee Metallwerk METHOD FOR PRODUCING A TARGET FOR CATHODE SPRAYING
JPS63274763A (en) * 1987-04-30 1988-11-11 Sumitomo Metal Mining Co Ltd Alloy target for magneto-optical recording
US5094288A (en) * 1990-11-21 1992-03-10 Silicon Casting, Inc. Method of making an essentially void-free, cast silicon and aluminum product
JPH0539566A (en) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp Sputtering target and its production
JPH0625782A (en) * 1991-04-12 1994-02-01 Hitachi Ltd High ductility aluminum sintered alloy and its manufacture as well as its application
US5417827A (en) * 1991-11-29 1995-05-23 Ppg Industries, Inc. Cathode targets of silicon and transition metal
JPH05214523A (en) * 1992-02-05 1993-08-24 Toshiba Corp Sputtering target and its manufacture
US5342571A (en) * 1992-02-19 1994-08-30 Tosoh Smd, Inc. Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets
US5427736A (en) * 1994-04-05 1995-06-27 General Electric Company Method of making metal alloy foils
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
US5863398A (en) * 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
US5766380A (en) * 1996-11-05 1998-06-16 Sony Corporation Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates
US5963778A (en) * 1997-02-13 1999-10-05 Tosoh Smd, Inc. Method for producing near net shape planar sputtering targets and an intermediate therefor
EP1028824B1 (en) * 1997-07-15 2002-10-09 Tosoh Smd, Inc. Refractory metal silicide alloy sputter targets, use and manufacture thereof
JP2989169B2 (en) * 1997-08-08 1999-12-13 日立金属株式会社 Ni-Al intermetallic compound target, method for producing the same, and magnetic recording medium
US6010583A (en) * 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US6581669B2 (en) * 1998-03-10 2003-06-24 W.C. Heraeus Gmbh & Co., Kg Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation
CA2265098A1 (en) * 1998-03-12 1999-09-12 Abdelouahab Ziani Method for producing aluminum alloy powder compacts
US6332906B1 (en) * 1998-03-24 2001-12-25 California Consolidated Technology, Inc. Aluminum-silicon alloy formed from a metal powder
US20020014406A1 (en) * 1998-05-21 2002-02-07 Hiroshi Takashima Aluminum target material for sputtering and method for producing same
US6183686B1 (en) * 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US6153313A (en) * 1998-10-06 2000-11-28 General Electric Company Nickel aluminide coating and coating systems formed therewith
ATE430636T1 (en) * 1998-12-28 2009-05-15 Ultraclad Corp METHOD FOR PRODUCING A SILICON/ALUMINUM SPUTTER TARGET
US6165413A (en) * 1999-07-08 2000-12-26 Praxair S.T. Technology, Inc. Method of making high density sputtering targets
US6042777A (en) * 1999-08-03 2000-03-28 Sony Corporation Manufacturing of high density intermetallic sputter targets
US6475263B1 (en) * 2001-04-11 2002-11-05 Crucible Materials Corp. Silicon aluminum alloy of prealloyed powder and method of manufacture
US6797137B2 (en) * 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
DE10140589A1 (en) * 2001-08-18 2003-02-27 Heraeus Gmbh W C Sputtering target made of a silicon alloy and method for producing a sputtering target
JP2003089864A (en) * 2001-09-18 2003-03-28 Mitsui Mining & Smelting Co Ltd Aluminum alloy thin film, wiring circuit having the same thin film, and target material depositing the thin film

Also Published As

Publication number Publication date
US20040062675A1 (en) 2004-04-01
TW200404908A (en) 2004-04-01
CN1685078A (en) 2005-10-19
EP1511879A1 (en) 2005-03-09
TWI278524B (en) 2007-04-11
JP2005529239A (en) 2005-09-29
WO2003104522A1 (en) 2003-12-18

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase