AU2003241408A1 - A surface geometry for mos-gated device - Google Patents
A surface geometry for mos-gated deviceInfo
- Publication number
- AU2003241408A1 AU2003241408A1 AU2003241408A AU2003241408A AU2003241408A1 AU 2003241408 A1 AU2003241408 A1 AU 2003241408A1 AU 2003241408 A AU2003241408 A AU 2003241408A AU 2003241408 A AU2003241408 A AU 2003241408A AU 2003241408 A1 AU2003241408 A1 AU 2003241408A1
- Authority
- AU
- Australia
- Prior art keywords
- mos
- surface geometry
- gated device
- gated
- geometry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/142,600 US6710414B2 (en) | 2002-05-10 | 2002-05-10 | Surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes |
US10/142,600 | 2002-05-10 | ||
US10/142,622 | 2002-05-10 | ||
US10/142,622 US6861337B2 (en) | 2002-05-10 | 2002-05-10 | Method for using a surface geometry for a MOS-gated device in the manufacture of dice having different sizes |
PCT/US2003/014626 WO2003096406A1 (en) | 2002-05-10 | 2003-05-09 | A surface geometry for mos-gated device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003241408A1 true AU2003241408A1 (en) | 2003-11-11 |
Family
ID=29423049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003241408A Abandoned AU2003241408A1 (en) | 2002-05-10 | 2003-05-09 | A surface geometry for mos-gated device |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1504467A1 (en) |
JP (1) | JP4938236B2 (en) |
CN (2) | CN101697349A (en) |
AU (1) | AU2003241408A1 (en) |
TW (1) | TWI268549B (en) |
WO (1) | WO2003096406A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004048278B3 (en) * | 2004-10-05 | 2006-06-01 | X-Fab Semiconductor Foundries Ag | Simulation and / or layout method for power transistors designed for different powers |
CN102105986B (en) * | 2008-07-28 | 2013-05-01 | Nxp股份有限公司 | Integrated circuit and method for manufacturing an integrated circuit |
JP5742627B2 (en) | 2011-09-26 | 2015-07-01 | 住友電気工業株式会社 | Semiconductor device and manufacturing method of semiconductor device |
JP5630552B2 (en) * | 2013-10-15 | 2014-11-26 | 富士電機株式会社 | Silicon carbide semiconductor device and manufacturing method thereof |
JP6598037B2 (en) * | 2015-07-01 | 2019-10-30 | パナソニックIpマネジメント株式会社 | Semiconductor device |
US11031343B2 (en) | 2019-06-21 | 2021-06-08 | International Business Machines Corporation | Fins for enhanced die communication |
EP3863065A1 (en) | 2020-02-04 | 2021-08-11 | Infineon Technologies Austria AG | Semiconductor die and method of manufacturing the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5016080A (en) * | 1988-10-07 | 1991-05-14 | Exar Corporation | Programmable die size continuous array |
US5499124A (en) * | 1990-12-31 | 1996-03-12 | Vu; Duy-Phach | Polysilicon transistors formed on an insulation layer which is adjacent to a liquid crystal material |
GB9106720D0 (en) * | 1991-03-28 | 1991-05-15 | Secr Defence | Large area liquid crystal displays |
CA2222031C (en) * | 1996-03-25 | 2002-01-29 | Rainbow Displays, Inc. | Tiled, flat-panel displays with color-correction capability |
JP3276325B2 (en) * | 1996-11-28 | 2002-04-22 | 松下電器産業株式会社 | Semiconductor device |
JP2001352063A (en) * | 2000-06-09 | 2001-12-21 | Sanyo Electric Co Ltd | Insulation gate type semiconductor device |
JP3597762B2 (en) * | 2000-07-24 | 2004-12-08 | 株式会社日立製作所 | Semiconductor integrated circuit and method of manufacturing the same |
-
2003
- 2003-05-07 TW TW092112471A patent/TWI268549B/en active
- 2003-05-09 EP EP03731142A patent/EP1504467A1/en not_active Withdrawn
- 2003-05-09 AU AU2003241408A patent/AU2003241408A1/en not_active Abandoned
- 2003-05-09 JP JP2004504285A patent/JP4938236B2/en not_active Expired - Fee Related
- 2003-05-09 CN CN200910150498A patent/CN101697349A/en active Pending
- 2003-05-09 WO PCT/US2003/014626 patent/WO2003096406A1/en active Application Filing
- 2003-05-09 CN CNB038106094A patent/CN100530568C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI268549B (en) | 2006-12-11 |
JP2005525701A (en) | 2005-08-25 |
WO2003096406A1 (en) | 2003-11-20 |
CN101697349A (en) | 2010-04-21 |
CN1653602A (en) | 2005-08-10 |
EP1504467A1 (en) | 2005-02-09 |
JP4938236B2 (en) | 2012-05-23 |
TW200403730A (en) | 2004-03-01 |
CN100530568C (en) | 2009-08-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase | ||
TH | Corrigenda |
Free format text: IN VOL 18, NO 2, PAGE(S) 516 UNDER THE HEADING APPLICATIONS OPI - NAME INDEX UNDER THE NAME GENERALSEMICONDUCTOR, INC., APPLICATION NO. 2003241408, UNDER INID (43) CORRECT THE PUBLICATION DATE TO READ 24.11.2003 |