AU2003208560A1 - Esd-robust power switch and method of using same - Google Patents
Esd-robust power switch and method of using sameInfo
- Publication number
- AU2003208560A1 AU2003208560A1 AU2003208560A AU2003208560A AU2003208560A1 AU 2003208560 A1 AU2003208560 A1 AU 2003208560A1 AU 2003208560 A AU2003208560 A AU 2003208560A AU 2003208560 A AU2003208560 A AU 2003208560A AU 2003208560 A1 AU2003208560 A1 AU 2003208560A1
- Authority
- AU
- Australia
- Prior art keywords
- esd
- same
- power switch
- robust power
- robust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02076695 | 2002-04-29 | ||
| EP02076695.2 | 2002-04-29 | ||
| PCT/IB2003/001091 WO2003094242A1 (en) | 2002-04-29 | 2003-03-20 | Esd-robust power switch and method of using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2003208560A1 true AU2003208560A1 (en) | 2003-11-17 |
Family
ID=29286175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2003208560A Abandoned AU2003208560A1 (en) | 2002-04-29 | 2003-03-20 | Esd-robust power switch and method of using same |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU2003208560A1 (en) |
| WO (1) | WO2003094242A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6984853B2 (en) * | 2004-02-26 | 2006-01-10 | Agilent Technologies, Inc | Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection |
| EP2400552A1 (en) * | 2010-06-24 | 2011-12-28 | Dialog Semiconductor GmbH | Mos transistor structure with easy access to all nodes |
| TW201209997A (en) * | 2010-08-16 | 2012-03-01 | Fortune Semiconductor Corp | Layout of power MOSFET |
| EP2937906A1 (en) | 2014-04-24 | 2015-10-28 | Nxp B.V. | Semiconductor ESD device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3355817B2 (en) * | 1994-10-20 | 2002-12-09 | 株式会社デンソー | Semiconductor device |
| US6002156A (en) * | 1997-09-16 | 1999-12-14 | Winbond Electronics Corp. | Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering |
| US5955763A (en) * | 1997-09-16 | 1999-09-21 | Winbond Electronics Corp. | Low noise, high current-drive MOSFET structure for uniform serpentine-shaped poly-gate turn-on during an ESD event |
| US6274896B1 (en) * | 2000-01-14 | 2001-08-14 | Lexmark International, Inc. | Drive transistor with fold gate |
-
2003
- 2003-03-20 WO PCT/IB2003/001091 patent/WO2003094242A1/en not_active Application Discontinuation
- 2003-03-20 AU AU2003208560A patent/AU2003208560A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003094242A1 (en) | 2003-11-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |